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    FQD20N06 Search Results

    FQD20N06 Datasheets (13)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQD20N06
    Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF 674.56KB 9
    FQD20N06L
    Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF 678.71KB 9
    FQD20N06LE
    Fairchild Semiconductor 60V LOGIC N-Channel MOSFET Original PDF 670.19KB 9
    FQD20N06LETM
    Fairchild Semiconductor 60V N-Channel Logic level QFET (Built in ESD Protection Diode) Original PDF 670.19KB 9
    FQD20N06LETM
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17.2A DPAK Original PDF 8
    FQD20N06LTF
    Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF 678.71KB 9
    FQD20N06LTF
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17.2A DPAK Original PDF 8
    FQD20N06LTM
    Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF 678.71KB 9
    FQD20N06LTM
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 17.2A DPAK Original PDF 8
    FQD20N06TF
    Fairchild Semiconductor 60V N-Channel QFET Original PDF 674.56KB 9
    FQD20N06TF
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 16.8A DPAK Original PDF 8
    FQD20N06TM
    Fairchild Semiconductor 60V N-Channel QFET Original PDF 674.56KB 9
    FQD20N06TM
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 16.8A DPAK Original PDF 8
    SF Impression Pixel

    FQD20N06 Price and Stock

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    UMW FQD20N06

    MOSFET N-CH 60V 16.8A DPAK
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    DigiKey () FQD20N06 Cut Tape 1,486 1
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    FQD20N06 Digi-Reel 1,486 1
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    FQD20N06 Reel 2,500
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    onsemi FQD20N06TM

    MOSFET N-CH 60V 16.8A DPAK
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    DigiKey () FQD20N06TM Digi-Reel 1 1
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    FQD20N06TM Cut Tape 1 1
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    FQD20N06TM Reel
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    Newark FQD20N06TM Cut Tape 5
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    Flip Electronics FQD20N06TM 2,500
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    New Advantage Corporation FQD20N06TM 37,723 1
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    onsemi FQD20N06TF

    MOSFET N-CH 60V 16.8A DPAK
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    DigiKey FQD20N06TF Reel 2,000
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    onsemi FQD20N06LTF

    MOSFET N-CH 60V 17.2A DPAK
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    DigiKey FQD20N06LTF Reel 2,000
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    onsemi FQD20N06LTM

    MOSFET N-CH 60V 17.2A DPAK
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    DigiKey FQD20N06LTM Reel
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    FQD20N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: QFET TM FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06L FQU20N06L PDF

    FQD20N06LE

    Abstract: FQU20N06LE
    Contextual Info: QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06LE FQU20N06LE FQU20N06LE PDF

    Contextual Info: FQD20N06 N-Channel QFET MOSFET 60 V, 16.8 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    FQD20N06 FQD20N06 175oC PDF

    FQD20N06L

    Abstract: FQU20N06L
    Contextual Info: QFET TM FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06L FQU20N06L FQU20N06L PDF

    fqd20n06 data

    Abstract: FQD20N06 FQU20N06 640uH
    Contextual Info: QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06 FQU20N06 fqd20n06 data FQU20N06 640uH PDF

    FQD20N06

    Abstract: FQU20N06
    Contextual Info: FQD20N06 / FQU20N06 April 2000 QFET TM FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06 FQU20N06 FQU20N06 PDF

    Contextual Info: FQD20N06 N-Channel QFET MOSFET 60 V, 16.8 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    FQD20N06 PDF

    Contextual Info: QFET TM FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06L FQU20N06L FQD20N06LTF FQD20N06LTM O-252 PDF

    FQD20N06LETF

    Contextual Info: QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06LE FQU20N06LE FQD20N06LETM FQD20N06LETF O-252 PDF

    Contextual Info: QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06LE FQU20N06LE PDF

    FAIRCHILD FQD DPAK

    Abstract: FQD20N06L FQU20N06L
    Contextual Info: QFET TM FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06L FQU20N06L FAIRCHILD FQD DPAK FQU20N06L PDF

    Contextual Info: FQD20N06 N-Channel QFET MOSFET 60 V, 16.8 A, 63 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQD20N06 PDF

    Contextual Info: QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06 FQU20N06 PDF

    640uH

    Contextual Info: QFET TM FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06 FQU20N06 FQU20N06 FQU20N06TU O-251 640uH PDF

    FQD20N06

    Abstract: FQU20N06
    Contextual Info: QFET TM FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06 FQU20N06 FQU20N06 PDF

    Contextual Info: QFET TM FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06 FQU20N06 FQD20N06TM FQD20N06TF O-252 PDF

    Contextual Info: QFET TM FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD20N06L FQU20N06L FQU20N06L FQU20N06LTU O-251 PDF

    Contextual Info: FQD20N06LE / FQU20N06LE August 2000 QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FQD20N06LE FQU20N06LE PDF

    FQD20N06L

    Abstract: FQU20N06L
    Contextual Info: FQD20N06L / FQU20N06L April 2000 QFET TM FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    FQD20N06L FQU20N06L FQU20N06L PDF

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


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    O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    FQU20N06L

    Contextual Info: N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original
    FQD20N06L FQU20N06L FQU20N06L PDF

    mosfet D403

    Abstract: D403 mosfet D404 mosfet U401B q406 BLM41PG600SN1L 10UF-50V 74HC4066 C4161 U403B
    Contextual Info: 1 2 3 4 5 SHUNT_CON_2,54 SHUNT_CON_2,54 JS400 JS402 1 PGND VBAT- G C433 2 1 LOAD_MINUS_ON GND 2 12 5 GND GND R401 R403 10K0_0603_0.1% 1 2 R405 R407 30K0_0603_0.1% 1 2 100N_16V_X7R PGND PGND PGND 150K 150K 10K 1 R425 2 1 R417 2 V_BUCK_IN_B 150K 10K 1 R424 2 1 R416 2 V_BUCK_IN_A


    Original
    JS400 JS402 U402D 74HC4066 16-Jan-2007 A0501 U401E 1TP401 1TP400 mosfet D403 D403 mosfet D404 mosfet U401B q406 BLM41PG600SN1L 10UF-50V 74HC4066 C4161 U403B PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF