FR-107 DIODE Search Results

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

diode fr 107

Abstract: fr 107 diode nkt ceramic
Contextual Info: Texas Instruments TGD0600 Series GaAs Schottky-Barrier Mixer Diodes Features • Broadband performance from VHF to 100 GHz ■ Less than 7-dB conversion loss from 32 to 90 GHz ■ Rugged, Symmetrical, Hermetic Package Description The Texas Instruments TGD0600 Series

OPA2048CA

Abstract: 200w transistor amplifier circuit 200w power AB amplifier circuit diagram 300w transistor power amplifier circuit diagram RD13B 2SC372 F2B transistor 200w power amplifier circuit diagram CCDs Charge Coupled Devices equivalent transistor of F2B transistor
Contextual Info: This version: Jan. 1998 Previous version: May. 1997 E2P0060-37-X2 ¡ electronic components OPA2048CA IMAGE SENSORS OPA2048CA Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, one-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a two-phase clock pulse,

FR152

Abstract: FR153 FR154 FR155 FR156 FR157 FR201 FR202 FR203 FR204
Contextual Info: RECTIFIER DIODES, Fast Recovery, Plastic Package S t P a rt Number M axim um A v e ra g e Rectified Current at T, (A m p s i i i i i FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 FR201 FR202 FR 203 FR 204 FR 205 FR206 FR207 FR301 FR302 FR303 FR304 FR305

BAL99LT1

Contextual Info: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300

diode fr 107

Abstract: FR-107 diode 107p datasheet fr 107 diode FR 105 A-405 FR101 FR107 fr 1004 diodes
Contextual Info: LESHAN RADIO COMPANY, LTD. FR101 thru FR107 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * High temperature metallurgically bonded construction

zener diode ST 4148

Abstract: Zener Diode 4148 zener T 4148 FR-107 diode ZENER diode t 4148 zener diode 4148 circuit diagram 1n 4148 zener diode diode st 4148 diode 4937 T 4148 zener
Contextual Info: KA7524 LINEAR INTEGRATED CIRCUIT a dip POWER FACTOR CONTROLLER The K A 7 5 2 4 provides the necessary features to im plem ent the E lectronic BALLAST control and S.M.P.S app licatio n for d e s ig ­ n ing on active pow e r fa cto r co rrectio n circuit. FEATURES

Contextual Info: FEATURES gl • 3 0 0 - 1000 MHz MODEL-NO. DA0769 w Ef ■ 3.4 dB Insertion Loss ■ 200 nSec Switching Speed PIN Diode 5 Section Attenuator ■ TTL Control ■ 24 Pin Surface Mount Package 5 BIT RF IN/OUT 24 1 +5V G ND • GND 23 2 GND 22 21 3 4 GND GND 20

APD 1550 nm

Abstract: NR8500CP-BC NR8500CP-CC NR8500CR-BB NR8500CR-CB NR8500FP-BC NR8500FP-CC NR8500FR-BB NR8500FR-CB outline mx 503
Contextual Info: NEC's φ φ50 µ µm InGaAs APD IN COAXIAL PACKAGE NR8500 Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 7 nA NEC's NR8500 series is an InGaAs avalanche photo diode APD coaxial module with optical fiber pigtail. This module is

Contextual Info: FAST RECOVERY DIODE 17.7A/100~200V/trr:35ns« C16P10FR C16P20FR FEATURES 15.91.626 . 3.61142) 15-3 .60ä> ^ 3.4(.134)D1A •Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) 20.3(.800) 1Ô.7(!?Ÿ5> 4.3C.169) I 3.7(.145)

Contextual Info: Central" BAW100 Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 consists of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This

C16P20F

Abstract: C16P20FR C16P10FR T0247AC C16P10F
Contextual Info: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr :35nsec FEATURES 5.3 209 4.7U85I , » Similar to T0-247AC (TO-3P) Case 15.91.626) . 3.6U42)r r ~ \S $ .ti S a y 3.4(.134) j 0 Dual Diodes - Cathode Common and Anode Common (Type - R )

ma4p

Abstract: MA4P7108 MA4P7010 diode KS 1060 - R MA4P4302
Contextual Info: HIPAX Series PIN Diodes High Power PIN Diodes MA4P4000, MA4P4300, MA4P7000 MA4P7100, MA4P1200, MA4P1250 Features • High Power Handling • Low Loss, Low Distortion • Voltage Ratings to 1000 Volts • Passivated PIN Chip - Full Face Bonded • Hermetically Sealed

DTESD7V0LED02

Abstract: DTESD5V0LED02 DTESD12VLED
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD7V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD7V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD3V3LED02 WBFBP-02C ESD Protection Diode 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD3V3LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD7V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD7V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD5V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD5V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

C16P20FR

Abstract: C16P20F C16P10F C16P10FR
Contextual Info: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr : 35nsec FEATURES • Similar to TO-247AC TO-3P Case . 15.91.626) . p 15.3Ì.6( ^ I ° Dual Diodes - Cathode Common and Anode Common (Type - R) 3.61142) 3.4C134) 20.3(.800> ld.7<!?5>

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD3V3LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD3V3LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD12VLED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD12VLED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

MBE3-50

Abstract: MBE301 TOKO 113kn if transformer
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA5637 Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners Objective specification File under Integrated Circuits, IC02 Philips Semiconductors 1995 Mar 21 Philips Semiconductors Objective specification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD12VLED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD12VLED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,

DTESD5V0LED02

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD5V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD5V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,