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PPAP MANUAL for automotive industry

Contextual Info: ESD7371, SZESD7371 Series Ultra-Low Capacitance ESD Protection http://onsemi.com MARKING DIAGRAMS 2 1 Features • • • • • • • • • SOD−323 CASE 477 2 Industry Leading Capacitance Linearity Over Voltage Low Capacitance 0.7 pF Max, I/O to GND

Contextual Info: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current

B41H100G

Abstract: MBR41H100CTT4G MBR41H100CTG
Contextual Info: MBR41H100CTG, MBR41H100CTT4G, MBRB41H100CT-1G, NRVBB41H100CTT4G SWITCHMODE Power Rectifier 100 V, 40 A http://onsemi.com 1 2, 4 3 Features and Benefits •         MARKING DIAGRAMS 4 Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency

Contextual Info: MBR41H100CTG, MBR41H100CTT4G, MBRB41H100CT-1G, NRVBB41H100CTT4G SWITCHMODE Power Rectifier 100 V, 40 A http://onsemi.com 1 2, 4 3 Features and Benefits •         MARKING DIAGRAMS 4 Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency

b1645 diode

Abstract: b1645 B1645G MBR1645G MBR1635 MBR1635G MBR1645 MBRB1645
Contextual Info: MBR1635, MBR1645, MBRB1645 MBR1645 is a Preferred Device SWITCHMODEt Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com MARKING DIAGRAMS Features • •

Contextual Info: BAT54ALT1G, BAT54ALT3G, SBAT54ALT1G, SBAT54ALT3G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

SBAT54ALT1G

Contextual Info: BAT54ALT1G, BAT54ALT3G, SBAT54ALT1G, SBAT54ALT3G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

NS sot-23

Abstract: NSVBAT54
Contextual Info: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: BAT54CTT1G, SBAT54CTT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAT54CLT

Abstract: SBAT54CLT1G
Contextual Info: BAT54CLT1G, SBAT54CLT1G Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAT54HT1G, NSVBAT54HT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low

Contextual Info: BAT54CLT1G, SBAT54CLT1G Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

SBAT54CWT1G

Contextual Info: BAT54CWT1G, SBAT54CWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

BAT54SWT1G

Abstract: NSVBAT54 marking B8M
Contextual Info: BAT54SWT1G, NSVBAT54SWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAT54WT1G, NSVBAT54WT1G Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where

Contextual Info: BAT54SLT1G, SBAT54SLT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAT54CWT1G, SBAT54CWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: BAT54CTT1G, SBAT54CTT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount