FREE ENERGY Search Results
FREE ENERGY Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CY7C006A-20AXI |
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16KX8 DUAL-PORT SRAM, 20ns, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-64 |
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TIDA-00100 |
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Indoor Light Energy Harvesting Reference Design for Bluetooth Low Energy (BLE) Beacon Subsystem |
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CC2642R1TWFRTCRQ1 |
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Automotive qualified SimpleLink Bluetooth Low Energy wireless MCU |
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CC2650MODAMOHR |
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SimpleLink™ Bluetooth® low energy Wireless MCU Module 29-QFM -40 to 85 |
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FREE ENERGY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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mutoh ip-220Contextual Info: Database for Properties of Lead-Free Solder Alloys DATABASE FOR PROPERTIES OF LEAD-FREE SOLDER ALLOYS Version 1.0 This database is a joint project of ELFNET and COST 531 Action. COST 531 ACTION ON LEAD-FREE SOLDER ALLOYS EURPEAN LEAD-FREE SOLDERING NETWORK |
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kskimm12 RC22717 W0302-019) mutoh ip-220 | |
Contextual Info: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
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NVD6824NL AEC-Q101 NVD6824NL/D | |
hb1c
Abstract: HOOKM353 UL-1598A UL-1598 Occupancy Sensor LOOPM353 tunnel sensor PPH480U
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277VAC) 50/60Hz 480VAC) 50/60Hz Catalogs/Illumination/MDEXHBX001 MDEXHBX001 hb1c HOOKM353 UL-1598A UL-1598 Occupancy Sensor LOOPM353 tunnel sensor PPH480U | |
NVD6824Contextual Info: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
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NVD6824NL NVD6824NL/D NVD6824 | |
NVD5117PL
Abstract: 369C 4800 power mosfet NVD5117PLT4G
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NVD5117PL AEC-Q101 NVD5117PL/D 369C 4800 power mosfet NVD5117PLT4G | |
NVD6824NLContextual Info: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
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NVD6824NL AEC-Q101 NVD6824NL/D | |
diode a29Contextual Info: NVD5117PL Power MOSFET −60 V, 16 mW, −61 A, Single P−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
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NVD5117PL NVD5117PL/D diode a29 | |
echelon FT-x2
Abstract: FT-X2 14250R FT-X1 echelon FT-x1 echelon FT-x2 14250r ftx1 14240r 14250R-300 14240R Magnetic ink CEA-709
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14260R-800, 14240R, 14250R-300 I/CEA-709 003-0441-01a echelon FT-x2 FT-X2 14250R FT-X1 echelon FT-x1 echelon FT-x2 14250r ftx1 14240r 14250R-300 14240R Magnetic ink CEA-709 | |
FT-X1
Abstract: echelon FT-x1 echelon FT-x2 14240R 14250R-300 EN14908 FT-X1 echelon ftx1 14240r EN14908-1 altera manchester
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14260R-800, 14240R, 14250R-300 ANSI/CEA-709 EN14908 03-0441-01A FT-X1 echelon FT-x1 echelon FT-x2 14240R 14250R-300 FT-X1 echelon ftx1 14240r EN14908-1 altera manchester | |
Contextual Info: NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol |
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NDD60N550U1 NDF60N550U1/D | |
Contextual Info: NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol |
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NDD60N360U1 NDD60N360U1/D | |
Contextual Info: NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD6820NL AEC-Q101 NVD6820NL/D | |
68-20LContextual Info: NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD6820NL NVD6820NL/D 68-20L | |
Contextual Info: NVD5803N Product Preview Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
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NVD5803N AEC-Q101 NVD5803N/D | |
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Contextual Info: NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com |
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NVD5803N NVD5803N/D | |
Contextual Info: NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD6828NL AEC-Q101 NVD6828NL/D | |
Contextual Info: NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD6820NL AEC-Q101 NVD6820NL/D | |
Contextual Info: NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com |
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NVD5803N AEC-Q101 NVD5803N/D | |
Contextual Info: NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD6828NL NVD6828NL/D | |
Contextual Info: NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD6828NL AEC-Q101 NVD6828NL/D | |
Echelon FTT-10A
Abstract: ftx1 14240r FT-X1 echelon FT-x1 14230R-450 E4S40 ftt-10a echelon FT-x2 14222R-800 14212R-500
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40MHz 20MHz 003-0337-01F Echelon FTT-10A ftx1 14240r FT-X1 echelon FT-x1 14230R-450 E4S40 ftt-10a echelon FT-x2 14222R-800 14212R-500 | |
Echelon FTT-10A
Abstract: IC A 3120 echelon FT-x1 FT-X1 ftx1 14240r ftt-10a 14230R-450 FT3150 echelon FT-x2 A 3150 ic
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40MHz 20MHz 003-0337-01G Echelon FTT-10A IC A 3120 echelon FT-x1 FT-X1 ftx1 14240r ftt-10a 14230R-450 FT3150 echelon FT-x2 A 3150 ic | |
NVD5863
Abstract: NVD5863NL
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NVD5863NL AEC-Q101 82licable NVD5863NL/D NVD5863 | |
Contextual Info: NVD5865NL Power MOSFET 60 V, 38 A, 16 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD5865NL AEC-Q101 NVD5865NL/D |