FREE IC NPN TRANSISTOR Search Results
FREE IC NPN TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
![]() |
||
D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
![]() |
||
MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor |
![]() |
||
SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
![]() |
||
SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
![]() |
FREE IC NPN TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free |
Original |
2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R OT-89 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T O-220F | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R |
Original |
MJE13001 MJE13001L-x-AB3-A MJE13001G-x-AB3-A-R MJE13001L-x-AB3-F MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B | |
MJE13001
Abstract: MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92
|
Original |
MJE13001 MJE13001L MJE13001G MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001 MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001-PL-x-T92-B |
Original |
MJE13001-P MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K MJE13001-PL-x-T92-A-B MJE13001-PG-x-T92-A-B MJE13001-PL-x-T92-A-K MJE13001-PG-x-T92-A-K QW-R201-088 | |
MJE13001Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R |
Original |
MJE13001 MJE13001G-x-AB3-A-R OT-89 MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B MJE13001 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R |
Original |
2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-T92-R | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R |
Original |
2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-TA3-T | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B |
Original |
MJE13001-P MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K MJE13001L-P-x-T92-F-B MJE13001G-P-x-T92-F-B MJE13001L-P-x-T92-F-K MJE13001G-P-x-T92-F-K QW-R201-088 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B |
Original |
MJE13001-P MJE13001L-P-x-T92-B MJE13001G-P-x-T92-B MJE13001L-P-x-T92-K MJE13001G-P-x-T92-K MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K QW-R201-088 | |
2SD313
Abstract: 2SB507 2sd313 equivalent 2SD313 E
|
Original |
2SD313 2SB507 O-220 06-Feb-07 O-220 2SD313 2SB507 2sd313 equivalent 2SD313 E | |
MJE-13001
Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
|
Original |
MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 MJE13001 C 2025 npn 600v to92 transistor mje13001 | |
MJE-13001
Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92
|
Original |
MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92 | |
MUN5211DW
Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking
|
Original |
MUN5211DW OT-363 SC-88) 29-Dec-05 OT-363 MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking | |
Contextual Info: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volt VOLTAGE POWER 330 mW • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . Halogen Free |
Original |
BC817 500mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, BC817-16 BC817-25 BC817-40 2014-REV | |
|
|||
2SC5343 equivalent
Abstract: 2SC5343 equivalent for 2SC5343 transistor 2sc5343
|
Original |
2SC5343 150mA 100mA 01-Jun-2002 2SC5343 equivalent 2SC5343 equivalent for 2SC5343 transistor 2sc5343 | |
Contextual Info: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 * “G” Lead Pb -Free 1 4 5 6 NPN+NPN 2 4 3 SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Symbol VCEO VCBO IC Value |
Original |
MUN5211DW OT-363 SC-88) OT-363 | |
Contextual Info: MMDT3904TB6 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V SOT-563 • Collector current IC = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives. |
Original |
MMDT3904TB6 200mA 2002/95/EC IEC61249 OT-563 OT-563, MIL-STD-750, | |
bc847csContextual Info: BC847CSTB6 DUAL NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 45 Volts POWER 210 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 45V • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives. |
Original |
BC847CSTB6 100mA 2002/95/EC IEC61249 OT-563, MIL-STD-750, 2012-REV bc847cs | |
transistor m4aContextual Info: DATA SHEET MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Both normal and Pb free product are available : Normal : 80~95 % Sn, 5~20 % Pb |
Original |
MMBT4401 225mW 600mA OT-23 transistor m4a | |
Contextual Info: BC847CSTB6 DUAL NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 45 Volts POWER 210 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 45V • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives. |
Original |
BC847CSTB6 100mA 2002/95/EC IEC61249 OT-563, MIL-STD-750, 2012-REV | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R |
Original |
2SD1898 2SB1260. OT-89 2SD1898L-x-AB3-R 2SD1898G-x-AB3-R QW-R208-030 | |
marking code 16W
Abstract: BC817-40W
|
Original |
BC817-16W 500mA 2002/95/EC IEC61249 OT-323, MIL-STD-750, BC817-16W BC817-25W BC817-40W 2011-REV marking code 16W BC817-40W | |
Contextual Info: BC817-16W SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 300 mW • NPN epitaxial silicon, planar design 0.087 2.20 0.070(1.80) • Collector current IC = 500mA • Lead free in comply with EU RoHS 2002/95/EC directives. 0.078(2.00) 0.004(0.10)MIN. |
Original |
BC817-16W 500mA 2002/95/EC IEC61249 OT-323, MIL-STD-750, BC817-16W BC817-25W BC817-40W | |
MUN5211DW
Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW
|
Original |
MUN5211DW OT-363 SC-88) 20-Jan-09 OT-363 MUN5212DW MUN5213DW MUN5214DW MUN5215DW |