FREE TRANSISTOR BS 200 Search Results

TRANSISTOR SMD MARKING CODE BS t

Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 SC74 marking 345 BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
Contextual Info: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

TRANSISTOR SMD MARKING CODE BS t

Abstract: BCM857 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV BCM857DS
Contextual Info: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

TRANSISTOR SMD MARKING CODE BS t

Abstract: smd marking code bs transistor marking A9 R8 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV
Contextual Info: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

TRANSISTOR SMD MARKING CODE BS t

Abstract: SC74 marking 345 TRANSISTOR SMD MARKING CODE BS smd marking code bs BC847BS BC847BV BCM847BS BCM847BV BCM847DS BCM857BS
Contextual Info: BCM847BV; BCM847BS; BCM847DS NPN/NPN matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

U106BS

Abstract: 44e sensor u106 U106B triac control circuit with pulse transformer 106BS
Contextual Info: 44E » "’T • flTSQOTti Q01Q34S 7 ■ A L 6 G U 106BS TELEFUNKEN ELECTRO NIC ZERO VOLTAGE SWITCH Triac Control for Industrial Purpose in Static Switch, Burst Firing, Proportional Driver, Power Timer etc. : "T "7 Technology: BipoFar Features: • Supply voltage monitoring

BF991

Abstract: dual-gate
Contextual Info: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

melcher S-1000

Abstract: Melcher LK 2320-7R
Contextual Info: S-Family DC-DC Converters <100 W 100 W DC-DC AC-DC Converters Rugged Environment S-Family Input to output isolation Single output: AS.LS 1000 Double output: AS.LS 2000 • Extremely wide input voltage range • Input over- and undervoltage lock-out • Efficient input filter and built-in surge and transient

"MARKING CODE MK"

Abstract: BF1211 BF1211R BF1211WR dual-gate tuner TELEVISION PINNING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR FEATURES PINNING • Short channel transistor with high forward transfer

BF1212R datasheet

Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer

BSV81

Abstract: rce3 VBD30
Contextual Info: BSV81 J V _ N-CHANNEL IG-MOS-FET Sym m etrical depletion type field-effect transistor in a TO-72 metal envelope with the substrate connec­ ted to the case. It is intended fo r chopper and other special switching applications, e.g. timing circuits,

APL5332

Abstract: PCT resistor 1.5k A102 APM2300A marking 303w
Contextual Info: APL5332 0.8V Reference LDO with Source-Sink & Output Selection Functions Features General Description • LDO with Source and Sink Capabilities • Single Input Voltage The APL5332 is a precise CMOS LDO with source sink and output selection functions. The APL5332 offers 2%

heat sensor with fan cooling using 741 op amp

Abstract: melcher S-1000 melcher ls 2320 -7r diode ux
Contextual Info: S-Family DC-DC Converters <100 W 100 W DC-DC AC-DC Converters Rugged Environment S-Family Input to output isolation Single output: A S.LS 1000 Double output: A S.LS 2000 • Extremely wide input voltage range • Input over- and undervoltage lock-out

Contextual Info: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

MG200M1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . The Collector is IsoLated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hpg=100 Min. (Ic=200A’ . Low Saturation Voltage

BF996

Abstract: marking BS marking BS mosfet
Contextual Info: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate

marking code 11G1

Contextual Info: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.

BF1201WR

Abstract: BF1201 BF1201R Bp SOT343R dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs

free transistor bs 200

Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Contextual Info: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.

"MARKING CODE LE"

Abstract: BF1202R BF1202WR BF1202 PHILIPS LDP 0805 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs

Contextual Info: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS

LM391N 90

Abstract: texas instruments tip41 Vbe multiplier LM391N-100 W47B LM391N equivalent lm391n amplifier IC LM391 schematic diagram 800 watt power amplifier free d LM391
Contextual Info: LM391 LM391 Audio Power Driver Literature Number: SNVS753A LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity

TC701

Abstract: transistor RJH 30 nokia production line ausi die attach
Contextual Info: Novel Material for Improved Quality of RF-PA in Base-Station Applications Co-Authored by Nokia Research Center and Freescale Semiconductor Presented at 10th International Workshop on THERMal INvestigations of ICs and Systems 29 September – 1 October 2004

Contextual Info: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.