FREESCALE SEMICONDUCTOR BODY MARKING Search Results

4066 spice model

Abstract: LL1608-FH MBC13900 MBC13900T1
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package

Contextual Info: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking

905 motorola

Abstract: MRFIC0970 QFN-20 GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v
Contextual Info: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking

MBC13720

Abstract: MBC13720T1 low noise amplifier 0947
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking

qfn-12

Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST
Contextual Info: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820

MC13770

Abstract: PC13770FC QFN-12 LNA marking R0
Contextual Info: Freescale Semiconductor, Inc. Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package

Contextual Info: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking

MOTOROLA RF POWER SEMICONDUCTOR DETAIL

Abstract: JEDEC QFN case outline MRFIC1870 QFN-20
Contextual Info: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking

M13892AJ

Abstract: MC13892VL MC13892AJVK MC13892 MC13892JVK MC13892VK M13892 MC13892J MC13892AJVL MC13892 registers
Contextual Info: Document Number: MC13892ER Rev. 7.0, 10/2010 Freescale Semiconductor Errata MC13892, Silicon Errata Introduction This errata document applies to the following devices: Package 12x12 7x7 Part Number Functional Description Device Marking Mask ID Silicon Revision

SECF036

Abstract: MCF5214 MCF5216 MCF5216DE MCF5282 SECF038
Contextual Info: MCF5216 Chip Errata Silicon Revision: All Supports: MCF5214, MCF5216 Summary of MCF5214/16 Errata All current MCF5214/16 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is

MCF528X

Abstract: MCF5282 MCF5281 MCF5282DE L95M
Contextual Info: MCF5282 Chip Errata Silicon Revision: All Supports: MCF5281, MCF5282 Summary of MCF528x Errata All current MCF5281/82 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is

98ARL10519D

Abstract: JESD51-5 JEDEC JESD51-8 BGA AN2409 JESD51-7 JESD51-51 jesd51 8 54ld JESD51-8
Contextual Info: Freescale Semiconductor Application Note AN2409 Rev. 1.0, 12/2005 Small Outline Integrated Circuit Fine Pitch Package SOIC 1.0 Purpose This Application Note provides general package information including package dimensions, guidelines for printed circuit board (PCB) layout,

465B

Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF373A

Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

smd transistor marking z8

Contextual Info: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18085A

Contextual Info: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MFR18060BLR3 MFR18060BLSR3 Designed for PCN and PCS base station applications with frequencies from

MRF18030A

Contextual Info: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

MRF19090

Abstract: 465B CDR33BX104AKWS MRF19090R3 MRF19090SR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

"RF power MOSFETs"

Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

smd transistor marking z1

Abstract: marking TRANSISTOR SMD nf c4 MRF18060A
Contextual Info: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MRF9030 Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

MRF18085A

Abstract: F 5M 365 R AN1955 GSM1800 MRF18085ALR3 MRF18085ALSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and