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Text: SDT13301 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)10 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT13301
Freq12M
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Abstract: No abstract text available
Text: SDN1020 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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SDN1020
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Abstract: No abstract text available
Text: 2N1048C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m
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2N1048C
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Abstract: No abstract text available
Text: 2G141 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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2G141
Freq12M
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Abstract: No abstract text available
Text: 2N603A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC) I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.
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2N603A
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Text: 2SC4152 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V)1.4k I(C) Max. (A)300m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)1.1k V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)60m
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2SC4152
Freq12MÃ
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Abstract: No abstract text available
Text: 2SD316-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0mØ° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD316-2
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Text: SDN1010 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.500
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SDN1010
Freq12M
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Abstract: No abstract text available
Text: 2N1047C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m
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2N1047C
Freq12M
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Text: 2N602A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC) I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.
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2N602A
Freq12M
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Abstract: No abstract text available
Text: SDT13302 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT13302
Freq12M
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Text: 2G304 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100’ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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2G304
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2G397
Abstract: No abstract text available
Text: 2G397 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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2G397
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Text: 2G309 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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2G309
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Text: 2SB1292 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SB1292
Freq12M
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Abstract: No abstract text available
Text: 2SD88A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)300 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD88A
Freq12M
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Text: 2SB1289 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SB1289
Freq12M
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Abstract: No abstract text available
Text: SDT13305 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT13305
Freq12M
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Abstract: No abstract text available
Text: 2N604A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC) I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.120 h(FE) Max. Current gain.
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2N604A
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Text: 2N1050C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m
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2N1050C
Freq12M
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Abstract: No abstract text available
Text: SK3257 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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SK3257
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Text: SDT13304 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT13304
Freq12M
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Abstract: No abstract text available
Text: 2G344 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.
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2G344
Freq12M
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Abstract: No abstract text available
Text: 2N1049C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m
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2N1049C
Freq12M
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