FREQ25 Search Results

Contextual Info: MSS60.253B20 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq253G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: A1B625C Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)520p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq25G Series Induct. (H)100p R(series) (Ohms)11 Neg Resist.38 Semiconductor MaterialGaSb Maximum Operating Temp (øC)100’

Contextual Info: A1A625C Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 4.5m Peak Curr. Tol. Total Cap. (F)450f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq25G Series Induct. (H)100p R(series) (Ohms)10 Neg Resist.38 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100’

Contextual Info: MSS60.253E30 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq253G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: BAT30 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandI;K Test Freq25G Frequency Min. (Hz)8.0G Frequency Max. (Hz)40G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: 117525G Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min6.0 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq25G Series Induct. (H)100p R(series) (Ohms)5.0 Neg Resist.75 Semiconductor MaterialGermanium

Contextual Info: MS1574A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F).60p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq25G Series Induct. (H).10n R(series) (Ohms)7.0 Neg Resist.60 Semiconductor MaterialGaSb

Contextual Info: MSS60.253H30 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq253G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: PZT2222 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2N6989+JANTX Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelY Number of Devices4 Type NPN/PNP V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)800m P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)

osc 50mhz smd 5x7

Abstract: Sunny TCXO Motorola lv93 plastic raw material CRYSTAL SMD 25MHZ SUNNY NPC 5037 Sunny 50MHz sm5545tev Alcatel-Lucent SM7745DV
Contextual Info: Pletronics, Inc. Design/Idea Workshop Agenda & Content Guideline Integrated Supply Chain Motorola Confidential and Proprietary 1 Agenda 1. Overview 2. Key Financial Measures 3. Technology Roadmap 4. Manufacturing Flow Diagram 5. Cost Breakdown Integrated Supply Chain

mems oscillator silicon clocks

Abstract: z cut quartz piezoelectric properties Panasonic saw osc 50mhz smd 5x7 Quartz wrist watch ic opnext l PLE SM77 106.25 m crystal high precision TCXO Crystal Oscillators piezoelectric film sensor PLE SM77 crystal
Contextual Info: Pletronics, inc. Manufacturer of High Quality Crystals and Oscillators Company Introduction Crystals and Oscillators Quartz crystals have been in regular use since the 1920’s to give an accurate frequency for all radio transmitters, radio receivers and computers. They

Contextual Info: TRSP20X Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: PN4141 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.

Contextual Info: 1843-3705 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)375ö V(BR)CBO (V)350 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MPS5127 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: TRSP4006 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MPS3642 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: ECG2358 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: SDT69604 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1771-0860 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)90 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: XGSR3040 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3868 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)800m