FRS240 Search Results

Contextual Info: FRS240D3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: if^ S S FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRS240H4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: FRS240R1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: FRS240R4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

12A200

Contextual Info: HARRI S SE IU C O N D a SECTO R bflE D H A R R is • 430 227 1 0 Q S 1 2D 3 3 1.7 ■ 2N7286D, 2N7286R SEMIC ON DU C TO R 9 REGISTRATION PENDING Currently Available as FRS240 D, R, H A / 7 9 A A M Ä l ¥ / Ä C / l / n Radiation Hardened N-Channel Power MOSFETs

Contextual Info: 2 ¡ HARRIS S E M I C O N D U C T O R FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on) = 0.255Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: FRS240H1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

transistor 257A

Abstract: mosfet 257A
Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 12A, 200V, RDS(on) = 0.255ft TO-257A A • Second Generation Rad Hard MOSFET Results From New Design Concepts

0255Q

Contextual Info: H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 12A.200V, RDS(on) = 0.255Q TO-257AA • Second Generation Rad Hard MOSFET Result*'From New Design Concepts

2N7286D

Abstract: 2N7286H 2N7286R 1E14 2E12
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 12A, 200V, RDS(on) = 0.255Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: FRS240R3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

1E14

Abstract: 2E12 FRS240D FRS240H FRS240R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRS240R

Abstract: 1E14 2E12 FRS240D FRS240H
Contextual Info: FRS240D, FRS240R, FRS240H 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 200V, RDS on = 0.255Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

OWS2412

Abstract: OWD2412 RWD2412 frs2405 OWD2415 owd4805 OWS2405 BWS2405 QED2405 FRS512
Contextual Info: s i i l i FEATURES T O 1 WATT Regulated, Single & Dual O utputs Via 4.65 - 5.50 10.9 -13.2 4.5 - 5.5 TO 1.5 W ATT U nregulated, Single & Dual O utputs 10.8 -13.2 TO 2.1 WATT Regulated, Single & Dual O utputs 4.65 - 5.50 TO 3.6 WATT Unregulated, Single & Dual

frs2405

Abstract: FRS505 FRS1215 International Power Devices FRS1212 FRS2415 FRS512 FRS1205 FRS2812 FRS4805
Contextual Info: INTERNATIONAL POWER S1 E D MÔS3ÔDT mOOOHCH =1 TO 6 WATT T-S7-Ü INTERNATIONAL POWER DEVICES FRS SERIES ELECTRICAL SPECIFICATIONS All Specifications Typical @+25°C, Nominal Line, and Full Load Unless Otherwise Noted. INPUT SPECIFICATIONS Input Voltage R ange.See Table Below

FRS2405

Abstract: BWS2405 iws2405 LDA25-24D5 FRS515 IWD2412 LDP3-24S5 lda25 BWS2412 IWS4805
Contextual Info: IPD Product Number 3W SERIES SUPLET Product Number Input Voltage V dc Output Data Output1 (Vdc/A) Output2 (Vdc/A) Output3 (Vdc/A) Power (W) BWS505 LDP3-6S5 5/0.5 3W BWS512 LDP3-6S12 12/0.25 3W BWS515 LDP3-6S15 15/0.2 3W BWD505 LDP3-6D5 BWD512 5V (4.5V~9V)

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .

SK100 transistor

Abstract: C125T-A rb342a stc 1740 k0389 l9150 St4540 st l9150 transistor nec 8772 MNT S100
Contextual Info: Cooper Crouse-Hinds Cross Reference Competitor: Adalet Competitor Catalog Number XFC-210 ECGJH110 XFC-212 ECGJH112 XFC-215 ECGJH115 XFC-218 ECGJH118 XFC-221 ECGJH121 XFC-224 ECGJH124 XFC-227 ECGJH127 XFC-230 ECGJH130 XFC-233 ECGJH133 XFC-236 ECGJH136 XFC-24 ECGJH14

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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