FSL130R4 Search Results

Contextual Info: CEHAE«» JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDs ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSL130R4 JANSR2N7395
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7395 S MAEESS August 1997 Formerly Available As FSL130R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET Features Description • 8A, 100V, ros ON = 0.230£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230

Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7395 S E M I C O N D U C T O R August 1997 Formerly Available As FSL130R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F

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Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: 130D, FSL130R fsl 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, ros ON = 0.230S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: 3 3 W A R F ? FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 100V, r DS ON = 0.230Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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