6MBP75RS120
Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Text: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible
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GEI-100364C
GEI-100364B
AF-300
0-F11
RF3180-F11
RF3100-F11,
RF3180-F11)
RF3280-F11,
RF3400-F11)
RF3880-F11)
6MBP75RS120
CLK70AA160
PVC7516
6mbp50rs120
Thermistor 15SP
6mbp150rs060
d6650
CLK100AA160
ps12047
PD10016A
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fuji step motor
Abstract: No abstract text available
Text: High Performance Multifunctional Inverters Maximum Engineering for Global Advantage FUJI INVERTERS With the flexibility and functionality to support a wide range of applications on all types of mechanical equipment, the FRENIC-MEGA takes core capability, responsiveness, environmental awareness, and
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MEH655a
C09a/C08)
fuji step motor
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79N60S1
Abstract: FMW79N60S1 FMW79N60S1HF MOSFET 79N60S1
Text: / FMW79N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg
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FMW79N60S1HF
O-247-P2
79N60S1
FMW79N60S1
FMW79N60S1HF
MOSFET 79N60S1
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MT5F12959
Abstract: 2MBI1200U4G-120 ED-4701 fuji igbt technical data
Text: DATE NAME DRAWN 07- Feb - 08 T.Nishimura CHECKED 07- Feb - 08 S.Miyashita CHECKED 07- Feb - 08 J.Komatsu T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced,
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200A/1200V-2in1
2MBI1200U4G-120
MS5F07033
H04-004-007
H04-004-003
MT5F12959
2MBI1200U4G-120
ED-4701
fuji igbt technical data
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ENE471D-14A
Abstract: ENE820D-20A 431D14 varistor 471 D14
Text: Z-TRAP FUJI Ceramic Surge Absorbers ENE series 50 to 300V AC Ta=25°C Features •Excellent clamping characteristics ·High discharge current capability up to 6500Amps ·Remarkably symmetrical V-I characteristics ·UL: recognized (UL1:UL1414 file No.E66188,UL2:UL1449,file No.E123894
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6500Amps
UL1414
E66188
UL1449
E123894
UL497B
E185638)
LR98228)
50Hz/60Hz
ENE471D-14A
ENE820D-20A
431D14
varistor 471 D14
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ENE471D-10A
Abstract: ENE271D-10A ENE820D-07A ENE361D-10A ENE221D-14A ENE241D-10A VARISTOR ENE271D ENE471D-14A ENE101D-10A ENE121D-07A
Text: Z-TRAP FUJI Ceramic Surge Absorbers ENE series 50 to 300V AC Ta=25°C Features •Excellent clamping characteristics ·High discharge current capability up to 6500Amps ·Remarkably symmetrical V-I characteristics ·UL: recognized (UL1:UL1414 file No.E66188,UL2:UL1449,file No.E123894
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6500Amps
UL1414
E66188
UL1449
E123894
UL497B
E185638)
LR98228)
50Hz/60Hz
ENE820D-05A
ENE471D-10A
ENE271D-10A
ENE820D-07A
ENE361D-10A
ENE221D-14A
ENE241D-10A
VARISTOR ENE271D
ENE471D-14A
ENE101D-10A
ENE121D-07A
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ENE471D-10A
Abstract: 431D-14 varistor 471 D14 ENE271D-10A ENE431D-05A ENE471D-14A ENE820D-05A ne39 fuji ceramic surge ENE820D-07A
Text: Z-TRAP FUJI Ceramic Surge Absorbers ENE series 50 to 300V AC Ta=25°C Features •Excellent clamping characteristics ·High discharge current capability up to 6500Amps ·Remarkably symmetrical V-I characteristics ·UL: recognized (UL1:UL1414 file No.E66188,UL2:UL1449,file No.E123894
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6500Amps
UL1414
E66188
UL1449
E123894
UL497B
E185638)
LR98228)
50Hz/60Hz
ENE820D-05A
ENE471D-10A
431D-14
varistor 471 D14
ENE271D-10A
ENE431D-05A
ENE471D-14A
ENE820D-05A
ne39
fuji ceramic surge
ENE820D-07A
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T35 diode
Abstract: diode T35 "RECTIFIER DIODE" HB 00173 CS52-12A CS53 CS53-16A CS54 diode fuji order number diode T35 -4-D6
Text: High Voltage Rectifier Diodes 1 Handling precautions Fuji Electric's high-voltage rectifier diodes were developed with emphasis on compactness. The diodes should be coated with an epoxy resin to maintain insulation during use. When handling the diodes, observe the following precautions at all
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CS52-12A,
CS53-16A
x210mm
T35 diode
diode T35
"RECTIFIER DIODE"
HB 00173
CS52-12A
CS53
CS53-16A
CS54
diode fuji order number
diode T35 -4-D6
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T35 diode
Abstract: diode T35 ESJA18 ESJA08-08 ESJA53-16A ESJA08 HB 00173 T35-4 diode ESJA04-03A ESJA09
Text: High Voltage Rectifier Diodes 1 Handling precautions Fuji Electric's high-voltage rectifier diodes were developed with emphasis on compactness. The diodes should be coated with an epoxy resin to maintain insulation during use. When handling the diodes, observe the following precautions at all
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ESJA04-02A,
ESJA04-03A
ESJA58-08A,
ESJA08-08
ESJA52-12A,
ESJA53-16A
x210mm
ESJA04
ESJA08
ESJA09
T35 diode
diode T35
ESJA18
ESJA08-08
ESJA53-16A
ESJA08
HB 00173
T35-4 diode
ESJA04-03A
ESJA09
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2MBI1200U4G-120
Abstract: ED-4701 MT5F12959
Text: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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14-Jul-05
200A/1200V-2in1
2MBI1200U4G-120
MT5F16507
H04-004-007
H04-004-003
2MBI1200U4G-120
ED-4701
MT5F12959
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fmc80n10t2
Abstract: FMI80N10T2 smd H04 FMB80N10T2
Text: Device Name DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
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FMI80N10T2
FMC80N10T2
FMB80N10T2
MS5F6118
H04-004-05
H04-004-03
fmc80n10t2
FMI80N10T2
smd H04
FMB80N10T2
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Fuji POWER
Abstract: welding inverter 200A 1DI200M-120
Text: 1DI200M-120 200A パワートランジスタモジュール FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 短絡耐量が高い HHigh Arm Short Circuit Capability hFE が高い
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1DI200M-120
25to30kgfcm]
13to17kgfcm]
35to45kgfcm]
Fuji POWER
welding inverter 200A
1DI200M-120
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1DI200M-120
Abstract: M109 welding inverter 200A
Text: 1DI200M-120 200A パワートランジスタモジュール FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 短絡耐量が高い HHigh Arm Short Circuit Capability hFE が高い
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1DI200M-120
1DI200M-120
M109
welding inverter 200A
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FMP80N10T2
Abstract: No abstract text available
Text: DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMP80N10T2
MS5F6116
H04-004-05
H04-004-03
FMP80N10T2
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varistor ENC series ENC471
Abstract: enc431 varistor ENC221 vaRistor ENC431 VARISTOR ENC121 ENC241 VARISTOR ENC271 VARISTOR ENC471 ENC221 varistor ENC series
Text: FUJI S 'ü iM ë ü ’G S ü E FUJI Ceramic Surge Absorbers New EIMC Series Z-TRAP M etal Oxide Varistors for Transient Voltage Protection REH119 FUJI Z-TRAP ENC SERIES Transient Suppressors General description FUJI'S ne w line of ceram ic surge absorbers are designed to pro te ct lo w
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REH119
varistor ENC series ENC471
enc431 varistor
ENC221 vaRistor
ENC431
VARISTOR ENC121
ENC241 VARISTOR
ENC271 VARISTOR
ENC471
ENC221
varistor ENC series
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7MBR50SB120-01
Abstract: 7MBR50SB120 100C
Text: This material and the Information herein Is ih» property of Fuji Elecinc Co .Ltd.They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever or the use of any third party.nor used tor the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.
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7MBR50SB120-01
H04-004-05
H04-004-03
7MBR50SB120-01
7MBR50SB120
100C
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7MBR50SB120
Abstract: DIODE 0406 251C
Text: This material and the Information herein is Ih# properly of Fuji Elecioc Co Lid.They shall be neither «»produced, copied leni, or disclosed in any way whatsoever fo' the use of any third party nor used or ihe manofac wring purposes without the express written consent of Fuji Electric Co. Ltd.
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7MBR50SB120
H04-004-07
Dec-24-
523A7TE^
H04-004-03
7MBR50SB120
DIODE 0406
251C
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varistor ENC series ENC471
Abstract: varistor ENC 471 ENC431 varistor ENC series enc471 ENC221 vaRistor ENC271 VARISTOR enc431 varistor ENC241 VARISTOR ENC431D-14A
Text: FUJI Z-TRAP ENC SERIES Transient Suppressors General description FUJI'S ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors from the effects of destructive voltage transients. The Z-TRAP ENC series are widely used
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--14A
varistor ENC series ENC471
varistor ENC 471
ENC431
varistor ENC series
enc471
ENC221 vaRistor
ENC271 VARISTOR
enc431 varistor
ENC241 VARISTOR
ENC431D-14A
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100C
Abstract: 7MBR50SB140-01
Text: Dev ice Name Type Name Spec. DATE DRAWN jUh- 2 ~'ev ChCCKED7ur^~ 2. ~cn> NAME No. Date DWG.NO. This maierisl aftd ihe tnlorrcution herein It the property of Fuji Hiectnc Co.tid.Thsy shill be neither reproduced, copied, lens, or disclosed 'ift any way whatsoever or the use of #ny
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7MBR50SB140-01
H04-004-05
H04-004-Ã
100C
7MBR50SB140-01
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ED-4701
Abstract: diode mv 5T
Text: This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of
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M25LP-160-04
MS5T00207
H04-004-05b
H04-004-03a
ED-4701
diode mv 5T
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Untitled
Abstract: No abstract text available
Text: 3. Equivalent C ircuit 2 . Equivalent C ircu it of Module +o .co- -OE Current Control Circuit -Vh >^— o -a •O- 4 . Absolute Maximus Ratings whatsoever for the use of any in any way third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.
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50A/ps
B5367TS
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enb 801 varistor
Abstract: varistor ENB ENB461 capacitor ENB401D-05A ENB461 ENB461M-03A ENB251 FUJI ENB221 enb221 ENB401D-10A
Text: COLLMER SEMICONDUCTOR INC F U J 7M DE I SSBflTTS 0DD07S0 3 È~'T " ft " ¿>2 I Ceramic Surge Absorber Z-TRAP/ENB Series x FUJI Z-TRAP ENB SERIES Transient Suppressors • General description FUJI'S new line of ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors
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0DD0750
10mADC
J22331,
J26374
1985-8/15B
enb 801 varistor
varistor ENB
ENB461 capacitor
ENB401D-05A
ENB461
ENB461M-03A
ENB251
FUJI ENB221
enb221
ENB401D-10A
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"Power Diode"
Abstract: 6RI100E inverters 3 phase ac newave power 6RI100E-060
Text: 6-Pack Diode 600/800 V 100 A FUJI S L S E D M ie POWER DIODE MODULE Features • A ll the te rm in a ls and the m o u n tin g plate are electrically isolated. These m odules can be installed in the same cooling fin as other m odules, thus saving in sta lla tion
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6RI100E-060/080
"Power Diode"
6RI100E
inverters 3 phase ac
newave power
6RI100E-060
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STR 6467
Abstract: str f 6467 1MBI800PN-180 T151
Text: m 7 ^ h -3 Fuji New Semiconductor Products - J L - T " * ? F r + >— ± *§ 1800V/800A/1 f l f f l IGBT i m i g ± * IS 1MBI800PN-180 b t ^ v ^ - - ; i/ Low loss • high speed switching IGBT Modules H • • Features mMJ£, High voltage, high current ^ ' i y ^><7' High speed switching
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800V/800A/1
1MBI800PN-180
1996-1o03o
STR 6467
str f 6467
1MBI800PN-180
T151
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