FUJI TENTATIVE Search Results

2MBI75UA-120

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied

2MB11

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2MB1150U B -120 Target specification This material and the Information herein is the property of Fuji Electnc Co.Ltd They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for the use of any

bose amp

Abstract: BOSE 2di50z note 2DI50Z-140 IB07
Contextual Info: Ratings and Characteristics of Fuji Power Transistor 2 D I 5 0 2 S — 1 A O TENTATIVE This material and the information herein is the property of Fuji Electric Co.l_td.They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

2MBI150UA-120

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IG B T Developm ent Dept. Section M12 <TENTATIVE> 2 M B I1 5 0 U A -1 2 0 Target specification This material and ihe Information herein is the property of Fuji Electnc Co .ltd They shall be neither reproduced, copied,

Contextual Info: Fuji H itachi Pow er S em iconductor Co.,Ltd IG B T D evelopm ent Dept. Section M12 <TENTATIVE> This material and the information herein is the property of Fuji Electnc Co .Ltd They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of any

2MBI200UB-120

Contextual Info: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS

M1273

Contextual Info: This material and the information herein is the property of Fuji Electric Co.Ltd.They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric C o , Ltd.

Contextual Info: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI450UE-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit Jun 19 ’02 Y.Kobayashi Jun 19 ’02 S.Miyashita REVISIONS T.Miyasaka

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> U-series 2MBI200UC-120 Target specification 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit July 9 ‘02 July 9 ‘02 REVISIONS T.Satou S.Miyashita T.Miyasaka

Contextual Info: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )

Contextual Info: Target Specification TENTATIVE (450A/1200V-6in1 IGBT Module) IGBT Module This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

Contextual Info: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: FUJI SILICON DIODE YA972S6R SPECIFICATION TENTATIVE Ⅰ.MAXIMUM RATINGS Item Symbol Conditions Ratings Units 600 V 10 A 100 A Tj +150 °C Tstg -40 to +150 °C VRRM Repetitive peak reverse voltage Io Average forward current square wave duty=1/2 Tc= °C IFSM Sine wave 10ms,1shot

Contextual Info: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED

Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

2MBI1200U4G-120

Abstract: ED-4701 MT5F12959
Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

MT5F12959

Abstract: MT5F ic60
Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

2SK3272-01L

Abstract: DIODE SJ 98
Contextual Info: Device Name Type Name Spec. No. DATE CHECKED NAME : DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

2SK3270-01

Contextual Info: DATE CHECKED Device Name : Type Name : Spec. No. : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

2SK3271

Abstract: 2SK3271-01
Contextual Info: Device Name Type Name Spec. No. DATE CHECKED NAME : : : DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

fuji igbt

Abstract: 4MBI150T-060 AE 04 equivalent
Contextual Info: a Changed the equivalent circuit Oct-24-’02 S.O, T,M 3 4 DATE REVISIONS MA4LE 18 5 6 NAME DRAWN Sep.-26-’02 S.Ogawa CHECKED Sep.-26-’02 S.Miyashita T.Miyasaka DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,

ic lm 7500

Abstract: TT 45 N 1400 MT5F10855 fuji IGBT
Contextual Info: a ft £ y iS g flf t y p g r o iS S _ k This material and the information herein is the property oJ the express written consent of Fuji Electric Co. Ltd. third party.nor used lor the manufac luring purposes without Fufi Electnc Co .Ltd.They shall be neither reproduced, copied

diode T325

Abstract: 2MBI150J-060 JZ 1-1A fuji IGBT
Contextual Info: i Ratings and characteristics of Fuji M B I 1 5 0 J T — IG B T 6 MBT Module (TENTATIVE) 1. Ou 11 ine Drawing Unit : mm * Isolation Voltage : AC 2500 V 1 ninute °í I : llí: U s - ìé t 2* â ë lili uni -iülï i n s 1|! jjjsl M UJ -O ÉÉJI Tab type terminals