FUJITSU KU MICROWAVE Search Results

schematic diagram inverter air conditioner

Abstract: schematic diagram inverter lcd monitor fujitsu washing machine bosch circuit diagram induction cooker schematic diagram schematic diagram induction cooker bosch washing machine motor schematic mb90802 Notebook lcd inverter schematic bosch Mass Air Flow Sensor Bosch Washing machine CPU
Contextual Info: MICROCONTROLLER FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact:

FMC1819LN-02

Abstract: FMC1819LN02
Contextual Info: FMC1819LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FMCI 718LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q

FMC1819C6-02

Contextual Info: FMC1819C6-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: FMCI 718P1 -01 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-|<jB = 21dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: FLK022WG FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK022WG is a power GaAs FET that is designed for general

Contextual Info: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general

Contextual Info: FLK202MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLK202M H-14 is a pow er GaAs FET that is designed for general

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

FMC2223P1-02

Abstract: Fujitsu Ku microwave
Contextual Info: FMC2223P1-02 , Ku k-Büiici Power GciAs Modules ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Parameter Symbol Rating Unit DC Input Voltage vdd 10 V DC Input Voltage vgg -7 V Input Power Pin 13 dBm Storage Temperature T stg -55 t o +125 °C Operating Case Temperature

Contextual Info: F M C IH 1901 -01 Ku, K-Baiid Power GaAs Modules ABSOLUTE MAXIMUM RATINGS A m bient Tem perature Ta = 25 C Parameter Symbol Rafting Unit DC Input Voltage Vd D 10 V DC Input Voltage VGG -7 V Input Power Pin 24 dBm Storage Temperature Tstg -55 to +125 °C

FMC2223LN-03

Abstract: fujitsu k-band
Contextual Info: FMC2223LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC2122LN-03

Abstract: k-band amplifier
Contextual Info: FMC2122LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1718C6-02

Contextual Info: FMC1718C6-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

555 databook

Abstract: FMC1718LN-02 "ku band" amplifier
Contextual Info: FMC1718LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: F| .ÇjU-, FMC2122LN-03 J Ku, K-Band Power GaAs M odules FEATURES • • • • • • • High Output Power: P-i ^ b = 12dBm Typ. High Gain: G-ih r = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50Q

FMC1819LN-02

Abstract: Fujitsu Ku microwave
Contextual Info: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: FMC2223LN-03 r UJ11bU Ku, K-Band Power GaAs Modules FEATURES • High Output Power: P-|<jB = 12dBm Typ. • High Gain: G-ih r = 12dB(Typ.) • Low In/Out VSWR • Low Noise: NF = 3.0dB (Typ.) • Broad Band: 22.4 ~ 23.6GHz • Impedance Matched Zin/Zout = 50Q

FMC1718P1-01

Abstract: Fujitsu Ku microwave aeg 558
Contextual Info: FMC1718P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: F|.fjU-, FMC2223C6-03 Ku, K-Band Power GaAs Modules rUJI 1jU FEATURES • • • • • • High Output Power: P-|<jB = 18dBm Typ. High Gain: G-ih r = 13dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: F| .ÇjU-, FMC1718C6-02 Ku, K-Band Power GaAs Modules J FEATURES • • • • • • High Output Power: P-|<jB = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC2223C6-03

Contextual Info: FMC2223C6-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 13dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC2122P1-02

Contextual Info: FMC2122P1-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)