FUJLTSU Search Results

Contextual Info: May 1990 FUjlTSU IPRODUCT PROFILE: MB85230 -80L/-10L/-12L CMOS 1M X 8 LOW POWER DRAM MODULE The Fujitsu MB85230 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C1000 devices. The MB85230 is optimized for those applications requiring high speed, high performance and

Contextual Info: Septem ber 1992 Edition 1.0 FUjlTSU DATA S H E E T MB85346A-60/-70/-80 CMOS 1 M X 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module The Fujitsu MB85346A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A

MB3736

Abstract: amplifier 15w
Contextual Info: T '1 H ~ 0 S '£ > \ FUJITSU MICROELECTRONICS 31E » 374=i7ba 0015Ö07 S • F M I October 1989 Edition 1.0 FUjlTSU DATASHEET• MB3736 15W BTL AUDIO AMPLIFIER 15W BTL AUDIO AMPLIFIER WITH INTERNAL STAND BY FUNCTION The Fujitsu MB3736 is designed or a low-frequency high-power amplifier with internal

FT1551

Abstract: FT2551
Contextual Info: FU JIT SU M I C R O E L E C T R O N I C S 31E D E3 D 0 1 b b l 2 b E3 FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated

MB88346

Abstract: DIP-20P-M02 MB88200 MB88500 tv suffix fujitsu 80 PINS mb8850 MB88341 *88346
Contextual Info: Ju ly 1990 E dition 1.0 DATA SHEET FUjlTSU MB88346 R-2R TYPE 8-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS DESCRIPTION M B 88346-P The Fujitsu M B88346 is an R -2 R type 8 -b it resolution d ig ita l-to -a n a lo g converter DAC , designed for interface with a w ide range of general 4 -b it and 8 -b it

Contextual Info: May 1990 FUjlTSU PRODUCT PROFILE MB85421-40/50 CMOS STATIC RAM MODULE 262144 Words X 9 -Bit The Fujitsu MB85421 is a fully decoded, C M O S static random access memory module with nine M B 81C 8 1A devices mounted on a 70-pin Epoxy module. A separate S E L E C T pin provides parity capability. Additionally,

MB87078

Contextual Info: July 1990 Edition 2.0 FUjlTSU DATA SHEET MB87078 ELECTRIC VOLUME 6-BIT 4-CHANNEL ELECTRIC VOLUME The Fujitsu MB87078 is a 6-bit 4-channel electric volume. Gain is controlled from 0 dB to -32 dB every 0.5 dB steps by digital signal input. The MB87O70 is fabricated in CMOS technology, it achieves low power consumption. Digital

Contextual Info: October 1989 Edition 1.0 FUjlTSU DATASHEET'- MB81C68A -4 S -W CMOS 16K-BIT HIGH SPEED SRAM 4096 WORDS x 4 BITS SRAM WITH HIGH SPEED AND AUTOMATIC POWER DOWN The Fujitsu MB81C68A-W is 4096 words x 4 bits static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be

Contextual Info: May 1990 FujlTSU PRODUCT PROFILE • MB85411-30/40 CMOS STATIC RAM MODULE 65536 Words x 9-Bit The Fujitsu MB85411 is a fully decoded, CMOS static random access p W memory module SRAM with nine MB81C71A devices mounted on a 70-pin Epoxy module. A separate SELECT pin provides parity capability.

c4547

Abstract: MB85410
Contextual Info: November 1989 Edition 1.0 FUjlTSU DATA SHEET : MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.

FT1551

Abstract: FT2551
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 D01bbl2 b E3FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T ) technology. R E T devices are

Contextual Info: March 1992 Edition 1.0 FUjlTSU DATA SHEET • MB81410OA-60/-70/-80 CMOS 4M X 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 bit Fast Page Mode Dynamic RAM The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304 memory cells in a x1 configuration. The MB814100A features a fa s t page* mode of

transistor H6C

Abstract: CG10492 cg10572 code r4k transistor r3n FPT-70P-M QFP-196 lu1414 LU18 LCC-64C-A01
Contextual Info: FUjlTSU M ay 1990 Edition 1.0 P R O D U C T P R O FILE CG10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-micron CMOS gate arrays is a highly integrated low-power, ultra high-speed product family that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-column gate structure and 2-layer

Contextual Info: March 1993 Edition 2.0 FUjlTSU DATA SHEET M B S 8 1 3 2 1 0 1-60/-70/-80 CMOS 32M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 33,554,432 x 1 BIT Nibble Mode Dynamic RAM Fujitsu MBS8132101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 33,554,432 memory cells in a x1 configuration. MBS8132101 DRAM has 2 chips of 16M DRAM

MB84256

Contextual Info: May 1990 Edition 1.0 DATA SHEET FUjlTSU MB98901RC CMOS Static Random Access Memory Card The MB98901 is a memory card with one MB84256 SRAM, organized as 32,768 words x 8 bits, and a replaceable lithium battery in a 38-pin plastic package. This card has TTL-compatible input/output and a 3-state output level with full static operation. It

Contextual Info: November 1989 Edition 1.0 FUjlTSU DATA SHEET MB40968/40968V 2-CHANNEL 8-BIT D/A CONVERTER 2-CHANNEL 8-BIT D/A CONVERTER The Fujitsu MB40968/40968V is a 2-channel 8-bit high speed digital to analog converter for video frequency band fabricated by Fujitsu Advanced Bipolar Technology This is suitable for

FPT-100P-M01

Abstract: mcl m01 94 MB82VP036
Contextual Info: February 1994 Edition 1.0 ADVANCE INFO. FUjlTSU DATASHEET MB82VP036 CMOS 32K x 36 SYNCHRONOUS SRAM CMOS 32768 WORDS BY 36-BIT SYNCHRONOUS STATIC RANDOM ACCESS MEMORY The Fujitsu MB82VP036 is a 1M bit CMOS Synchronous Static Random Access Memory SSRAM containing 1,179,648 memory cells accessible in a 36-bit

MB81C78A

Abstract: MB81C78A-35 MB81C78A-45
Contextual Info: Aprì! 1990 Edition 3.0 FUjlTSU DATA S H E E T MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory fabricated with a CMOS process. The memory uses asynchronous circuitry and may

C0807

Contextual Info: / FUJITSU LTD S3E T> Lp V 3 •j 7 374T7St. 0 G 0 2 4 b 3 T7b » F C A J January 1991 Edition 1.0 FUjlTSU DATASHEET: MB71C256-25/-35 PROGRAMMABLE BICMOS 262 ,144-BIT READ ONL Y MEMORY B IC M O S 262,144 BIT D EAP PRO M 32,768 W O R D x 8 BITS The Fujitsu MB71C256 is high speed BICMOS TTL electrically lield programmable

Contextual Info: DS04-21314-1E FUjlTSU DATA SHEET MB1519 ASSP DUAL SERIAL INPUT PLL FREQUENCY SYNTHESIZER DUAL SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 600MHz PRESCALER The Fujitsu MB1519 is a 600MHz dual serial input PLL Phase Locked frequency synthesizer designed for cellular telephone and cordless telephone applications.

MB87001A

Abstract: MB501 prescaler MB87001 50mhz crystal oscillator DIP MB501L FPT-16P-M06 CMOS 7-bit programmable counter
Contextual Info: FUjlTSU Sept. 1995 Edition 8.0a DATA SHEET MB87001A CMOS PLL FREQUENCY SYNTHESIZER CMOS SERIAL INPUT PHASE-LOCKED-LOOP PLL FREQUENCY SYNTHESIZER The Fujitsu MB87001A, fabricated in CMOS technology, is a serial input PLL frequency synthesizer. The MB87001A contains an inverter for connection to an external oscillator, a programmable

mb87006

Abstract: MB87006A MB505-16 902A4
Contextual Info: FUjlTSU Sept. 1995 Edition 4.0a DATA SHEET MB505-16 ULTRA HIGH FREQUENCY PRESCALER ULTRA HIGH FREQUENCY PRESCALER T h e Fujitsu M B 505 is a high frequency, up to 1.6GHz, prescaler used with a frequency synthesizer to form a Pha se Locked Loop PLL . It will divide the input

2SC3046

Abstract: transistor ITT
Contextual Info: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran­ sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.

Contextual Info: cP DS04-21338-1E . '' ' DATA SHEET - ASSP IF Band PLL Frequency Synthesizer MB15S02 • DESCRIPTION The Fujitsu MB15S02 is an exclusive Intermediate Frequency IF band Phase Locked Loop (PLL) frequency syn­