FULLY AUTOPROTECTED POWER MOSFET Search Results
FULLY AUTOPROTECTED POWER MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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FULLY AUTOPROTECTED POWER MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: VNP35N07-E, VNB35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description 3 3 1 The VNP35N07-E and VNB35N07-E are monolithic devices made using STMicroelectronics VIPower technology, intended for replacement of standard Power |
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VNP35N07-E, VNB35N07-E VNP35N07-E VNB35N07-E O-220 VNP35N07-E DocID023779 | |
Contextual Info: VNP35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description The VNP35N07-E is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. |
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VNP35N07-E VNP35N07-E O-220 DocID023779 | |
Contextual Info: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10 |
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VNB35NV04-E VNP35NV04-E, VNV35NV04-E PowerSO-10 VNB35NV04-E, VNP35NV04-E VNV35NV04-E O-220 DocID023550 | |
Contextual Info: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications. |
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DocID022888 | |
Contextual Info: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications. |
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DocID022888 | |
Contextual Info: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp RDS (on) |
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VND5N07 O-252 O-251 DocID4335 | |
Contextual Info: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz |
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VND5N07-E O-252 VND5N07-E O-251 DocID025077 | |
Contextual Info: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz |
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VND5N07-E O-252 VND5N07-E O-251 DocID025077 | |
VNP14NV04Contextual Info: VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04 / VNS14NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET PRELIMINARY DATA TYPE VNB14NV04 RDS on Ilim Vclamp 3 VND14NV04 VND14NV04-1 VNP14NV04 VNS14NV04 1 35 mΩ 12 A 40 V LINEAR CURRENT LIMITATION |
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VNB14NV04 VND14NV04 VND14NV04-1/ VNP14NV04 VNS14NV04 VND14NV04-1 | |
VNW100N04Contextual Info: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP |
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VNW100N04 O-247 O-247 VNW100N04, VNW100N04 | |
365R
Abstract: VNW50N04A
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VNW50N04A O-247 O-247 VNW50N04A, 365R VNW50N04A | |
VNW50N04AContextual Info: VNW50N04A "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW50N04A 42 V 0.012 Ω 50 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP ■ |
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VNW50N04A O-247 O-247 VNW50N04A, VNW50N04A | |
VND14NV04-1-E
Abstract: VND14NV04 VND14NV0413TR VND14NV04-E OMNIFET VND14NV04 pulse load calculation formula for single pulse VND14NV04-1 VNB14NV04 VNB14NV0413TR VNB14NV04-E
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VNB14NV04, VND14NV04 VND14NV04-1 VNB14NV04 VND14NV04, VND14NV04-1 VND14NV04-1-E VND14NV04 VND14NV0413TR VND14NV04-E OMNIFET VND14NV04 pulse load calculation formula for single pulse VNB14NV04 VNB14NV0413TR VNB14NV04-E | |
VNW100N04Contextual Info: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP |
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VNW100N04 O-247 O-247 VNW100N04, VNW100N04 | |
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VNW50N04 equivalent
Abstract: SGS-Thomson mosfet
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OCR Scan |
VNW50N04 VNW50N04 O-247 VNW50N04 equivalent SGS-Thomson mosfet | |
VND14NV04
Abstract: VNB14NV04 VND14NV04-1 VNP14NV04 VNS14NV04
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VNB14NV04 VND14NV04 VND14NV04-1/ VNP14NV04 VNS14NV04 VNB14NV04 VND14NV04-1 VNP14NV04 VND14NV04 VND14NV04-1 VNS14NV04 | |
OMNIFET
Abstract: JESD97 VNS3NV04D-E VNS3NV04TR-E
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VNS3NV04D-E VNS3NV04D-E 50KHz OMNIFET JESD97 VNS3NV04TR-E | |
VNB49N04
Abstract: VNP49N04FI VNV49N04
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VNP49N04FI VNB49N04 VNV49N04 VNB49N04 ISOWATT220 O-263 PowerSO-10TM VNP49N04FI VNV49N04 | |
VNA7NV04DContextual Info: VNA7NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFETS TARGET SPECIFICATION TYPE VNA7NV04D RDS on 60 mΩ (*) Ilim 6 A (*) Vclamp 40 V (*) (*) Per each device LINEAR CURRENT LIMITATION THERMAL SHUT DOWN • SHORT CIRCUIT PROTECTIONS ■ INTEGRATED CLAMP |
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VNA7NV04D VNA7NV04D SO-16 | |
Contextual Info: VND10N06 VND10N06-1 "OMNIFET" fully autoprotected Power MOSFET Features Max on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS(on) 0.3Ω Ilim 10A VCLAMP 60V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection |
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VND10N06 VND10N06-1 O-252 O-251 VND10N06 VND10N06-1 DocID4831 | |
VNB49N04
Abstract: VNP49N04FI VNV49N04
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VNP49N04FI VNB49N04 VNV49N04 VNB49N04 ISOWATT220 O-263 PowerSO-10TM VNP49N04FI VNV49N04 | |
Contextual Info: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120m Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection |
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VNS3NV04D-E VNS3NV04D-E | |
Contextual Info: VNB49N04 - VNV49N04 OMNIFET: fully autoprotected Power MOSFET Features Type VNB49N04 VNV49N04 VCLAMP RDS ON ILIM 42 V 20 mΩ 49 A 10 3 1 1 TO-263(D2PAK) • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp |
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VNB49N04 VNV49N04 VNB49N04 O-263 PowerSO-10 VNB49N04, VNV49N04 | |
Contextual Info: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection |
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VNS3NV04D-E VNS3NV04D-E |