FZ 101 Search Results

E 472M 2KV

Abstract: E 472M 3KV 332M 3kv E f472m DE7150F103MVA1-KC
Contextual Info: SAFETY RECOGNIZED C ER AM IC DISC CAPACITORS m tiF fn fn PART NUMBERING SYSTEM DE7150 CAPACITOR TYPE AND SIZE FZ 103 ^ P . _T TEMPERATURE CHARACTERISTICS CAPACITANCE VALUE Temperature range B = -25°C to +85°C F = -25°C to +85°C FZ = -10°C to +60°C

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

der FZ 1600 R 12 KF4

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values

A2100-A

Abstract: IC-105
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 M8 18 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

US015

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 FZ 1050 R 12 KF4 Höchstzulässige Werte / Maximum rated values

der FZ 1600 R 12 KF4

Abstract: 12KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values

Contextual Info: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module

F400

Contextual Info: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties pro Baustein / per module 0,03 °C/W Maximum rated values VcES 1200 V 400 A

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

Contextual Info: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W

I1130

Contextual Info: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300

560-2 565-1 capacitor

Abstract: capacitor B101K f472m capacitor 472M 222m capacitor 471K CAPACITOR F222M DE7100 DE7090 ac 472m
Contextual Info: SAFETY RECOGNIZED CERAMIC DISC CAPACITORS m tiFfntet PART NUMBERING SYSTEM DE7150 FZ 103 P VA1 t I_ K C/M Y CAPACITANCE VALUE CAPACITANCE VOLTAGE LISTED TYPE CAPACITOR TEMPERATURE CHARACTERISTICS Expressed in picofarads and identified by a TOLERANCE VA1=400 VAC: Europe

Contextual Info: fZ 7 SCS-THOMSON A 7I 5 LtEDÏtMflûS STPS1045M _ POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS If a v 10 A V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES

Contextual Info: MCOTS-C-28-270-FZ Single Output Full-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 270V Output 3.7A Output 95%@1.85A / 94% @3.7A Efficiency Operation: -55°C to +100°C The MilQor series of Mil-COTS DC-DC converters brings

TL082

Contextual Info: fZ 7 *JM, SGS-THOMSON « re m ra M D Ig S TL082 TL082A - TL082B GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIERS . LOW POWER CONSUMPTION . WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT . OUTPUT SHORT-CIRCUIT PROTECTION

Contextual Info: FZ 300 R 12 KF 2 Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,063 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200 V 300

Contextual Info: FZ 800 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,020 °C/W R th J C Elektrische Eigenschaften Electrical properties V ces Maximum rated values 1600 V 800 A R th C K 150 °C - 40 / + 150 °C

FZ 87 1500 6.3V

Abstract: FZ 83 1500 capacitor FZ 77 1500 6.3v FZ 83 capacitor FZ 75 capacitor 1500 6.3V FZ 77 1000 FZ 83 1000 capacitor FZ 77 1000 6.3v KT 382 FZ electrolytic capacitor
Contextual Info: FZ Series CHIP TYPE, LONG LIFE WITH EXTRA LOWER IMPEDANCE  Extra low impedance with temperature range -55qC to +105qC  Load life of 2000~3000 hours, impedance 5~25% less than KZ series  Comply with the RoHS directive 2002/95/EC SPECIFICATIONS Items Characteristics

mosfet vdss500v, vgss 30v

Abstract: KF10N50F KF10N50P MARKING FZ vdss500v, vgss 30v, id 25 A, KF10N50 813F2 FZ 101
Contextual Info: SEMICONDUCTOR KF10N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N50P,KF10N50PZ This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

tl071

Contextual Info: fZ 7 *JM, SGS-THOMSON « rem raM D ig s TL071 TL071A - TL071B LOW NOISE SINGLE J-FET OPERATIONAL AM PLIFIERS . LOW POWER CONSUMPTION . WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT . LOW NOISE en = 15nVA/Hz (typ)

Contextual Info: TMS370Cx32 8-BIT MICROCONTROLLER SPNS015C – FEBRUARY 1990 – REVISED FEBRUARY 1997 D D D D FZ AND FN PACKAGES TOP VIEW RESET OP8 OP7 OP6 OP5 OP4 OP3 OP2 OP1 SCITXD CP1 CMOS/ EEPROM/ EPROM Technologies on a Single Device – Mask-ROM Devices for High-Volume

TMS37

Abstract: TMDS3760500A
Contextual Info: TMS370Cx32 8-BIT MICROCONTROLLER SPNS015C – FEBRUARY 1990 – REVISED FEBRUARY 1997 D D D D FZ AND FN PACKAGES TOP VIEW RESET OP8 OP7 OP6 OP5 OP4 OP3 OP2 OP1 SCITXD CP1 CMOS/ EEPROM/ EPROM Technologies on a Single Device – Mask-ROM Devices for High-Volume