FZ 98 Search Results
FZ 98 Price and Stock
Diodes Incorporated 74LVC1G98FZ4-7Logic Gates Config Mult Function 1.65V to 5.5V 24mA |
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74LVC1G98FZ4-7 | 4,849 |
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Monolithic Power Systems MP3398AGF-ZLED Lighting Driver ICs 4-Ch Boost WLED Controller |
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MP3398AGF-Z | 2,253 |
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Analog Devices Inc ADG798HFZMultiplexer Switch ICs High Temperature (up to 210 C), Low Voltage 8-Channel Multiplexer |
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ADG798HFZ | 4 |
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Analog Devices Inc ADG5298HFZMultiplexer Switch ICs High Temperature (up to 210 C), High Voltage, Latch-Up Proof, 8-Channel Multiplexer |
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ADG5298HFZ | 3 |
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Analog Devices Inc AD7981HFZAnalog to Digital Converters - ADC 16-bit 600ksps 210C SAR ADC |
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AD7981HFZ | 3 |
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FZ 98 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AEC UPS CIRCUIT DIAGRAM
Abstract: UFBK LSA-Plus pcb long range locators diagram SURGE ARRESTER spark gap UAK 2-PE fz 98 1500 6.3 17-BU FLT-35 VAL-MS 230 ST
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D-32819 AEC UPS CIRCUIT DIAGRAM UFBK LSA-Plus pcb long range locators diagram SURGE ARRESTER spark gap UAK 2-PE fz 98 1500 6.3 17-BU FLT-35 VAL-MS 230 ST | |
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 33 KF2 vorläufiges Datenblatt preliminary datasheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung |
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FZ1200R12KL4C
Abstract: IGBT 1200A 600V
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82Ohm, FZ1200R12KL4C FZ1200R12KL4C IGBT 1200A 600V | |
FZ1800R17KF6B2Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1800 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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FZ1800R17KF6B2 FZ1800R17KF6B2 | |
2 F transistorContextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1800 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung |
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FZ186B2 2 F transistor | |
17kf6Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung |
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FZ166B2 17kf6 | |
IGBT FZ 1200
Abstract: IGBT 1200A IGBT FZ 1000 IGBT FZ 1800 KL4C transistor 600v FZ1200R12KL4C
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Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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FZ1600R17KF6B2 | |
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 12 KL4C vorläufige Daten prelim inary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage |
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820hm 12KL4C | |
IGBT 600V 1200A
Abstract: FZ1200R12KL4C IGBT 1200A 600V
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82Ohm, FZ1200R12KL4C IGBT 600V 1200A IGBT 1200A 600V | |
Contextual Info: FZ 800 R 12 KF 1 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A Thermal properties Rthjc DC, pro Baustein /p e r module 0,02 °C/W RthCK pro Baustein / per module 0,01 °C/W |
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125PC, | |
Contextual Info: PNP SILICON PLANAR M ED IU M POWER HIGH GAIN TRANSISTOR FZ T 1 151A - ISSUE 1 - JANUARY 1997_ FEATURES * V c e o =-40V * 3 A m p C ontinuous Current * 5 A m p Pulse Current * * Lo w saturation Voltage High Gain SOT223 |
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OT223 37e-3RB 250e-3RC 25e-3 440e-12 160e-12 | |
Contextual Info: fZ J SGS-THOMSON ^7# R L ie r a « B S S 6 4 SMALL SIGNAL NPN TRANSISTOR Type M arking BSS64 U3 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE LOW FREQUENCY APPLICATIONS |
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BSS64 BSS63 OT-23 BSS64 OT-23 | |
800AContextual Info: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W |
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800At 125-C, 800A | |
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Contextual Info: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W |
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800At 125-C, | |
Contextual Info: Ref. No. 2000/10 000771 c /s j 4 /~ f £ C o ^ Z fZ . H B R N /S -2 Specification SC-HBRN 02 A Drawing No. JSA28712-1 * • FCI Japan K. K. Electronics Division Engineering Section Certified bv H. Takakura Manager, Engineering Section TOLERANCES UNLESS OTHERWISE SPECIFIED . ±0.2 |
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JSA28712-1 UL94V-0) HBRN10S-2 HBRN11S-2 HBRN12S-2 HBRN13S-2 HBRN14S-2 HBRN15S-2 | |
Zener Z 5
Abstract: FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4
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FX-13 FX-11A FZ-10 CX-20 CX-30 CX-RVM5/D100/ND300R EX-10 12-turn) EX-20 Zener Z 5 FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4 | |
mini circuits 15542
Abstract: MINI-CIRCUIT 15542 mini-circuits 15542
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R68999 FZ990 FZ990, TB-457+ 98PL277 98-PL-277 mini circuits 15542 MINI-CIRCUIT 15542 mini-circuits 15542 | |
L4962EA
Abstract: va1n ROE capacitor 220 Diode BYW 56
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L4962 L4962/A L4962E/A L4962EH/A L4962EA va1n ROE capacitor 220 Diode BYW 56 | |
Contextual Info: fZ J m rJM VNP35N07 VNP35N07FI S G S -T H O M S O N KfflOSIMDIIILiCTIMfflDIGI ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET A DV AN C E DATA TYPE Vclamp R d S o ii 11im VNP35N07/FI 70 V 0.028 n 35 A . . . . . . . . . . LINEAR C U RREN T LIMITATION |
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VNP35N07 VNP35N07FI VNP35N07/FI O-220 VNP35N07/FI | |
Contextual Info: fZ 7 S G S - T H O M S O N SD4701 RF & MICROWAVE TRANSISTO RS CELLULAR BASE STATION APPLICATIONS • DESIGNED FOR CLASS AB LINEAR OPERATION ■ COMMON EMITTER . INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: P o u t = 45 W MIN. GAIN = 8.5 dB MIN. |
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SD4701 | |
Contextual Info: fZ ^ 7 • . ■ . ■ . 7 S G S -T H O M S O N SD1457 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION p OUT = 75 W MIN. WITH 10.0 dB GAIN PIN CONNECTION DESCRIPTION |
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SD1457 SD1457 | |
IYB187E
Abstract: BG 5924 gp 845
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IYB187E/ 644fV BPB46445445 74UCB IYB187E BG 5924 gp 845 | |
IC2500
Abstract: FZ 800 R 12 KF6
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