FZT558 Search Results

FZT558

Abstract: pnp high emitter base voltage 15 volt PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT ZTX558 DSA003710
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

FMMT458

Abstract: FZT458 FZT558 DSA003709
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT458 ISSUE 4 – JANUARY 1996 FEATURES * 400 Volt VCEO COMPLEMENTARY TYPE – PARTMARKING DETAIL – C E FZT558 FZT458 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSU E 4 - JANUARY 1996_ FEATURES * 400 Volt V,CEO C O M P L E M E N T A R Y TY PE P A R T M A R K IN G D ETA IL - FZT558 FZT458 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Collector-Base Voltage

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT458 ISSU E 4 - JANUARY 1996_ FEATURES * 400 Volt V,CEO C O M P L E M E N T A R Y T Y PE P A R T M A R K IN G D E T A IL - FZT558 FZT458 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE

FZT558

Abstract: DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt TYPICAL CHARACTERISTICS 1.6 IC/IB =50 1.4 1.2 1.0 0.6 0.6 0.2 1 20 PARTMARKING DETAIL - 0.4 0.001

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 IS S U E 2 - D E C E M B E R 1995_ FEATURES * * 400 Volt V CE0 200 m A continuous current * Ptot= 2 W a t t - - - C w jK T P A R T M A R K IN G D ET A IL -

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 - DECEMBER 1995 FEATURES * 400 Volt VCE0 * 200m A continuous current * Pt0,= 2 W a tt PARTMARKING DETAIL - c FZT558 B ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VcBO -400 V VcEO -400 V PARAMETER

FZT558

Contextual Info: A Product Line of Diodes Incorporated Green FZT558 400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA

FZT558TA

Contextual Info: A Product Line of Diodes Incorporated Green FZT558 400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • BVCEO > -400V IC = -200mA high Continuous Current Low saturation voltage VCE sat < -200mV @ -20mA

FZT558

Abstract: LE210 RES400
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FZT558 ISSUE 2 - DECEMBER 1995_ -FEATU RES * 400 Volt VCE0 * 200m A continuous current * Ptot= 2 Watt h P ARTM ARKIN G D ETA IL - E \

FCX558TA

Abstract: FCX458
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX558 ISSUE 3 – MARCH 1996 FEATURES * 400 Volt VCEO * Ptot= 1 Watt C COMPLEMENTARY TYPE – FCX458 PARTMARKING DETAIL – P58 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

fzt458

Contextual Info: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Transistors SMD Type Product specification FZT458 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 • Features ● Collector-emitter voltage: VCEO＞400V +0.1 3.00-0.1 ● Collector current-continuous: IC=300mA +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2

pnp 500v

Contextual Info: High Voltage Transistors PNP High Voltage Transistors 300 to 500 Volts The Zetex range of 300V to 500V transistors provide optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to line

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR IC/IB =20 1.6 IC/IB =50 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 ISSUE 2 – DECEMBER 1995 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 2 Watt -55°C +25°C +100°C

FMMTL717TA

Abstract: FMMT723TA FMMT560TA
Contextual Info: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

Contextual Info: A Product Line of Diodes Incorporated Green FZT458 400V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 400V Max Continuous Current IC = 300mA Low Saturation Voltage

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: Section S: Bipolar Transistors _ High Voltage Transistors ! 0 0 to 5 0 0 V olts SOT223 P!\IP High Voltage {Vq-o up BOOVI to Transistors Pinout Details: 1-Base, 2+4-Collector, 3-E m itter V CBO V CEO hFE lc Type V CE sat

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE