G 839 DIODE Search Results

scr phase angle controller

Abstract: PAYNE Potentiometer 75K 36E-2-250 36D-1-10 thyristor controller schematic 36E-4-80 36D-2-150 Payne thyristor dc controller schematic 36D-4-20
Contextual Info: RAME Model ENGINEERING Rt. 29 • Scott Depot VW *25560-0070 E-MAIL - sales@payneng.com DC Output Power Controls www.payneng.com vary AC voltage, which is full-wave rectified to provide an infinitely vari­ able DC output voltage. Power SCRs and diodes replace contacts

TFR 600

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD DSEI 60-02A C C A Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM

HT 1000-4 power amplifier

Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV830 - MV840 TYPE NU M BER C t DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz pF NOM MIN MAX Q, Q U ALITY FACTOR Vr = 4 Vdc f = 50 M Hz TYP MIN TR. TU N IN G RATIO f = 1 MHz C*4V / C-25V MIN TYP

Contextual Info: Common Cathode Fast Recovery Epitaxial Diode FRED DSEK60 r— V RSM V V RRM lFAVM = 2 x 3 4 A VRRM = 200 V trr = 35 ns TO-247 AD Type V A A 200 Symbol Test C onditions ^FRMS 1FAVM ^FRM "^"vj "^"vjM T c = 115°C ; re c ta n g u la r, d = 0.5 t p < 10 u s; rep. rating, pu lse w id th lim ite d by T VJM

ixys 60-02

Abstract: G 839 DIODE 60-02A
Contextual Info: Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 DSEK 60 IFAVM = 2x 34 A VRRM = 200 V = 35 ns trr TO-247 AD Type ISOPLUS 247TM Version A A DSEK 60-02A DSEK 60-02AR C A A C A Version AR C (TAB) A C A TAB A = Anode, C = Cathode

G 839 DIODE

Abstract: 60-02A
Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V = 35 ns trr TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A VRRM V V 200 200 Type C IFAVM = 69 A VRRM = 200 V = 35 ns trr TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5

Contextual Info: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 IFAVM = 2x 34 A VRRM = 200 V trr = 35 ns ISOPLUS 247TM TO-247 AD Type Version A A DSEK 60-02A DSEK 60-02AR C A Version AR A C A A C A C (TAB) TAB A = Anode, C = Cathode

Contextual Info: MTC-3053 Dual DIN-9141 Interface Data Sheet Preliminary Application Specific Standard Products Description Features The MTC-3053 provides the serial data interchange between electronic units for diagnostic purposes in automotive applications figures 3 to 5 .

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED V 200 VRRM miniBLOC, SOT-227 B E72873 Type V 200 DSEI 2x61-02A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM IFSM

XP161A11A1PR

Contextual Info: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.105Ω max ●Cellular and portable phones ●On-board power supplies ◆Gate Protect Diode Built-in ●Li-ion battery systems ◆Ultra High-Speed Switching

Contextual Info: Bias D etector Diodes V 2.00 i B • fe ' i ZBD Beam Lead Diodes Style 965A Teat Frequency Band Model N um ber Ä v3.4,5 M inim u m ^ M inim um 2 E o .m V -d B m ) (k Ohm s) (M inim um ) (Maximum) WAtfHfiB X 46 2 05 1.0 MA4C186B X 50 8 2.0 5.0 MAW lâGC

BDP 283

Abstract: BFK 78 bgl bgu SMCJ55A SMCJ63A gdv 64 a bdr 551 marking code BFK 94 GEZ 304 DIODES smcj 214 ghk
Contextual Info: Surface M ount Transient Voltage Suppresors smcj series 1500 Watt Peak Power Rating/SMC Type Num ber Sae N ot» SMCJ5.0 SMG&0A SMCJ63 SMCJ63A SMCJ65 SMCJ55A SMCJ7.0 SMCJ7M SMCJ75 SMCJ75A SMCJ8.0 SMCJ8.0A SMCJ8.5 SMCJ85A SMCJ&O SMCJ9ÜA SMCJ10 SMCJ10A SMCJ11

HIGH VOLTAGE THYRISTOR

Abstract: THYRISTOR MODULE IXYS MCC 94 94-22io1B
Contextual Info: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr PGM Maximum Ratings

Contextual Info: MCC 94 MCD 94 High Voltage Thyristor Module High Voltage Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 TO-240 AA Type MCC 94-20io1 B MCC 94-22io1 B ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 dv/dt cr Maximum Ratings

BTS 629 dimmer

Abstract: siemens dimmer Bts 629 BTS dimmer PWM circuit dimmer BTS629A Schaffner NSG bts 122 6 PIN PWM SMD BTS 130
Contextual Info: SIEM ENS Dimmer BTS 629 BTS 629 A The device allows continous control of power to a lamp or LED load utilizing pulse-width-modulation. Features • High-side switch • Overtemperature protection • Short circuit / Overload protection through pulse width reduction an overtemperature shutdown

C4D40120

Abstract: C4D40120D D4012 defibrillator
Contextual Info: C4D40120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF AVG = 40 A Qc Features • • • • • = 260 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching

C4D20120D

Abstract: C4D20120 D20120 CSD04060 A1818
Contextual Info: C4D20120D VRRM = 1200 V Silicon Carbide Schottky Diode IF = 20 A Z-Rec Rectifier Qc = 132 nC Features • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF

Contextual Info: DRD630G60 Rectifier Diode DS5987 – 1 January 2011 LN28008 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 6000V 630A 10500A VOLTAGE RATINGS Part and Ordering Number DRD630G60 DRD630G58 DRD630G56 DRD630G52 Repetitive Peak

DRD630G60

Contextual Info: DRD630G60 Rectifier Diode DS5987 – 1 January 2011 LN28008 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 6000V 630A 10500A VOLTAGE RATINGS Part and Ordering Number DRD630G60 DRD630G58 DRD630G56 DRD630G52 Repetitive Peak

BTS712-N1 equivalent

Contextual Info: SIEMENS PROFET BTS 711 L1 Smart Four Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • • O verlo ad protection C u rren t limitation Short-circuit protection Th erm al shutdow n O vervoltage protection

diode skn 21

Abstract: SKN 21 DIODE K3M12 SK 782 k3m6 diode skn 240 semikron semikron sk 240 000E-19 K3-M12 semikron k3m12 i s
Contextual Info: s e MIKRON Section 8: Rectifier Diodes Sum m ary of Types Type • New type 1 N 4001 . 4007 G SK 1 SK 1 G SK 3 V rrm V rsm Ifrms IfaV sin. 180 V A A 50 . 1 000 3 @ T case °C 1,1 751> Ifsm 10 ms 25 °C i2t 10 ms 25 °C A A2s 35 6,1 E 32 B 8-5 B 8-9 1 200 . 1 600