G 995 Search Results

LBG1000X3

Contextual Info: LTR REVISION DATE A .995 [25.3] APPD 05-27-04 RM .118 [3.00] .070 [1.78] TYP .315 [8.00] LBG1000X3KB-001 .200 [5.08] .400 [10.16] .300 [7.62] R NOTCH DENOTES PIN 1 Y G G G G G G Y R Y R R R G G .010 [0.25] .100 [2.54] TYP LBG1000X3KB-002 LEDTRONICS PART NO.

VEB mikroelektronik

Abstract: keramische werke hermsdorf VEB Keramische Werke Filter Hermsdorf hybridschaltkreise VEB M ik ro e le k tro n ik hermsdorf datenbuch datenbuch integrierte schaltkreise SF235
Contextual Info: Integrierte W iderstandsnetzwerke und Hybridschaltkreise A u s g a b e 1981 A b b ild u n g e n und W e rte ge lten nu r b e d in g t o ls U n te rla g e fü r B este llu n g e n , R echtsverb ind lich ist je w e ils d ie A u ftra g sb e stä tig u n g • Ä n d e ru n g e n Vorbehalten

4n8 relay

Contextual Info: 753. @B1;8<80AB?4 @86<0: ?4:0F 5KGWXUKV _ Upmb` rdocno\i_ qjgo\b` pk oj 9<77XCE3 h``on HEE R\mo =? \i_ V`g`^jm_d\ _ O``on GP=7@<7 6 GP;877: _ UOV \i_ FKR otk`n \q\dg\]g` _ Ddapm^\o`_ ^jio\^on _ Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g` _ Giqdmjih`io\g amd`i_gt kmj_p^o 0TjJU ^jhkgd\io1

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

HA 12058

Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Contextual Info: 753. @B1;8<80AB?4 @86<0: ?4:0E 5JFVWTJU ^ Upmb` rdocno\i_ qjgo\b` pk oj 9<77XCE3 h``on HEE R\mo =? \i_ V`g`^jm_d\ ^ O``on GP=7@<7 6 GP;877: ^ UOV \i_ FKR otk`n \q\dg\]g` ^ Ddapm^\o`_ ^jio\^on ^ Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g` Hdg` Pj5AG8:;?8

XC5VLX50FFG676

Abstract: XC5VLX50TFF1136 XC4VFX12-FF668 HW-V5-ML507-UNI-G XC5VFX100TFF1136 VIRTEX-5 DDR PHY ML510 Virtex-5 LX50 VIRTEX-5 ff1136
Contextual Info: ML501 ML505 ML506 Purpose: General purpose FPGA development board. Board Part Number: HW-V5-ML501-UNI-G Device Supported: XC5VLX50FFG676 Price: $995 Purpose: General purpose FPGA and RocketIO GTP Development Platform. Board Part Number: HW-V5-ML505-UNI-G Device Supported: XC5VLX50TFF1136

capacitors taicon m series

Abstract: taicon vt series taicon capacitors taicon vt capacitors taicon vt taicon
Contextual Info: TAICON VT ▅ ALUMINUM ELECTROLYTIC CAPACITORS W i d e Te m p e r a t u r e R a n g e Ty p e f o r G e n e r a l P u r p o s e series SPECIFICATIONS Item Performance O p e r a t i n g Te m p e r a t u r e R a n g e -40~+105℃ Vo l t a g e R a n g e 6.3 〜 400V

SG 3425

Contextual Info: M w T -5 G G / S G / H G 20 GHz High Gain Dual Gate GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES - ^ 4 4 j -| 5 u f - -144|- p !z n i_ q • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUrT

Contextual Info: Low Power Video Op Amp with Disable AD810 ANALO G D EVIC ES □ FEATURES High Speed SO MHz Bandwidth 3 dB, G = +1 75 MHz Bandwidth {3 dB, G = +2) 1000 V /|is Slew Rate 50 ns Settling Time to 0.1% (VQ = 10 V Step) Ideal for Video Applications 30 MHz Bandwidth (0.1 dB, G = +2)

Contextual Info: 1-Cube IQ Family Data Sheet Description Features • E ight d evices ra n g in g from 32 to 320 I / O P orts • SR A M -based P ro g ra m m in g for In-system R econfigurability • Sw itch M atrix A rchitecture • N on-blocking • P redictable & U niform D elays

Contextual Info: MICROWAVE TECHNOLOGY bbE » • b iem o o ooooEisb b i o ainRüiv M w T -5 G G / S G / H G 20 GHz High Gain Dual Gate GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES • 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUrT

Diode LT 4A 03

Abstract: 600ADC f8cj M106 T151 transistor WT9
Contextual Info: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — • Îfeifciïfc k BX m _ OS: <m[ KP*g/tt • A S O ^ /a I ' In c lu d in g Free W h e e lin g D io d e

Contextual Info: Metuchen G “ We Offer Quick Solutions to Noise Pollution” I -800-679-05 I t 1-800-679-9959/*!* w w w .m etcafM.ebl1 Ceramic Chip/MIL-C-55681 E s t a b lis h e d R e l i a b i l i t y “S O L D E R G U A R D ” I “S O L D E R G U A R D ” II MILITARY DESIGNATION “S” OR “U”

Contextual Info: <:9/. @=A=5FGD9 <=;< CBI9D ?5F7<=A; D9?5J :NKZ[XNY b N\o^cdib m`g\t b 897D nrdo^cdib ^\k\]dgdot \o T`n5gj\_ b D^^jm_dib oj oc` a\pgo ^pmm`io \i_ `g`^omd^\g gda` o`no ja LHF =97<<4:8A WF83 WF93 WF: 0kg`\n` n`` ]`gjr o\]g` \i_ ijo`n91 b K`\qt gj\_ pk oj :59;fXD

RETICON

Abstract: reticon filter 50 Hz notch filter EGG RETICON RF6651ANP-011
Contextual Info: n ¿ '^ E G z G RF6651ANP R E T IC O N C-Message/1010 Hz Notch/Program Weighting CMOS Combination Switched-Capacitor Filter Description The EG&G Reticon RF6651ANP-011 is a high performance, monolithic, switched-capacitor filter designed for testing tele­

bd 965

Abstract: catalog cinch d-sub cinch d-sub F 4704-3
Contextual Info: D R AWI N G R E V I S I O N S A B C D E F G H J K 1.209 [30.71] . 984 [24.99] .668 116.97] .500 112.70] .592 [15.04] .749 119.02] .314 [7.98] .455 í 11.56] .380 [9.65] . 187 [4.75] 15 1.536 [39.01] 1.312 [33.32 .995 [25.27 î .500 [12.70] .918 [23.32] .749

Contextual Info: ZENER DIODES 1 W ATT Z E N E R DIODE/DO-41 C A SE 7 O PERATIN G AND STO RA G E T EM PERA T U R E -65°Cto +175°C _ f g : _ fft.tlEB.fe &&&&% >% •& Maximum Zener PART Dynamic Impedances Maximum Reverse Current Forward Voltage

HX8347-G

Contextual Info: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

cti dro

Abstract: S014B
Contextual Info: SM J320C30, SM J320C31 DIGITAL SIGNAL PROCESSORS SG U S 014B - FEBRUARY 1991 - REVISED JUNE 1996 * -SS^C to Op er at i n g T emp er at u r e Range, QML P r o c e s s i n g • Two A d d r e s s G e n e r a t o r s With E i g h t A u x i l i a r y R e g i s t e r s and Two A u x i l i a r y

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES_ . VERY LOW NOISE FIGURE: NF = 0 .6 dB typical at f = 12 G H z • HIGH ASSOCIATED GAIN: G a = 1 1 .0 dB typical at f = 12 G H z

555 timer astable multivibrator

Abstract: NE555n PIN DIAGRAM SE555T 555 missing pulse detector nc 555 timer ci 555 time monostable timer NE555 pin configuration timer 555 monostable NE555F
Contextual Info: 555 DINnFÜ^OIL Precision Tim er FEATURES G ENERAL D E S C R IP T IO N • • • • • • Th e N E /SE 555 m o n o lith ic tim in g c irc u it is a h ig h ly stable c o n tro lle r cap able o f p ro d u c in g a ccu ra te tim e delays, or o s c illa tio n . A d d itio n a l te rm in a ls are provided fo r trig g e rin g

L 9104

Abstract: AD8100
Contextual Info: ANALOG DEVICES FEATURES High Speed 80 MHz Bandwidth 3 dB, G = +1 75 MHz Bandwidth (3 dB, G = +2) 1000 V /|is Slew Rate 50 ns Settling Time to 0.1% (V0 = 10 V Step) Ideal for Video Applications 30 MHz Bandwidth (0.1 dB, G = +2) 0.02% Differential Gain 0.04° Differential Phase

SN74ALVCH16646

Contextual Info: SN74ALVCH16646 16-BIT BUS TRANSCEIVER AND REGISTER WITH 3-STATE OUTPUTS S C E S 0 3 2 D -J U L Y 1 995 - REVISED O C TO B ER 1997 • Member of the Texas Instruments Widebus Family d g g , dgv, o r dl packag e t o p • E P IC ™ (Enhanced-Performance Implanted