G03B335 Search Results

Contextual Info: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V

Contextual Info: KA3S0880RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,

Contextual Info: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V

SSF4N90AS

Abstract: EL DRIVER 3-STAGE
Contextual Info: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V

tvn 610

Abstract: SSF45N20A
Contextual Info: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V

Contextual Info: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V

Contextual Info: SSF25N40A Advanced Power MOSFET FEATURES BV0SS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ H RoS on = 0 -2 ß Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS= 400V

Contextual Info: IRFS340A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V ■ Lower RDS(ON) : 0.437 £1 (Typ.)

74142

Abstract: SSF10N80A 115U ssv 620 00401ST
Contextual Info: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V

74142

Abstract: SSF5N90A
Contextual Info: SSF5N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ^DS on = 2.9 £2 Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V

IRF 850 mosfet

Abstract: IRF 850 250M SSF70N10A
Contextual Info: Advanced Power MOSFET SSF70N10A FEATURES • ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature RDS on — 0.023 Í2

SSF6N80A

Contextual Info: SSF6N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Ros on = 2 .0 Q ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 piA (Max.) @ VDS = 800V

SSF6N90A

Contextual Info: SSF6N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 900V

SSF5N80A

Abstract: PU 4145 pj 89 diode
Contextual Info: SSF5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jiA Max. @ VDS = 800V

Contextual Info: IRFS350A A dvanced Power MOSEET FEATURES B V DSS - 400 V Rugged Gate Oxide Technology ^ D S o n = 0 .3 ^ • Lower Input Capacitance lD = 11.5 A ■ Improved Gate Charge ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 400V

L65A

Abstract: SSF10N90A FI-80 717 MOSFET 74142
Contextual Info: SSF10N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 6.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @

SSF7N60A

Abstract: LD101
Contextual Info: SSF7N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25nA Max. @ V DS = 600V

SSF7N90A

Abstract: D-0402
Contextual Info: SSF7N90A Advanced Power MOSFET FEATURES = 9 0 0 R û S o n = 1 .8 5 A b • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 fiA (Max.) @ VDS= 900V

Contextual Info: SAMSUNG POWER SWITCH KA3S1265R S a m s u n g P o w e r S w it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,

Contextual Info: IRFS244A A dvanced Power MOSEET FEATURES BVDSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.28 Q. lD = 10.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

Contextual Info: KA3S0965RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,

SSF7N80A

Contextual Info: SSF7N80A A d van ced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS = 800V

SSF10N60A

Contextual Info: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ ^ D S o n Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 0 - 8 & lD = 6.9 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V

SSF9N90A

Contextual Info: SSF9N90A A d van ced Power MOSFET FEATURES B ^D S S Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 }iA Max. ■ Low RDS(0N) : 0.938 Q (Typ.) “ ^ D S (o n ) “