VGD15
Abstract: P2LAX511ESNDDB49 P2LBX512ESNDDB49 P2LAX511ESNXXX P2LBX512ESNXXX P2LDX514ESNDDN P2LBX512ESNDDN P2LAX511ESNDDN P2LBX512ESNXB549 P2LBX512ESHDDB49
Text: High performance directional control valves G1/8 - G1/2 body ported Catalogue: PDE2569TCUK-ca Edition: December 2006 PDE2569TCUK-ca Directional control valves Material Specification.
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PDE2569TCUK-ca
VGD15
P2LAX511ESNDDB49
P2LBX512ESNDDB49
P2LAX511ESNXXX
P2LBX512ESNXXX
P2LDX514ESNDDN
P2LBX512ESNDDN
P2LAX511ESNDDN
P2LBX512ESNXB549
P2LBX512ESHDDB49
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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transistor G1y
Abstract: No abstract text available
Text: ISCFdÈ{g1Ÿ { g1Ÿ text/html About News Contact keyword search: Employment Site Home part number search: JAN2N1715 #52574 RFQ/Sample NPN Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Package TO-5(STD)
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JAN2N1715
transistor G1y
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol
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MMIX4B12N300
IC110
IC110
MMIX4B12N300
6-07-12-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B12N300 C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC110 = 11A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol
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MMIX4B12N300
IC110
MMIX4B12N300
6-07-12-B
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g4 pc 50 w
Abstract: G2 - 395
Text: Advance Technical Information MMIX4B12N300 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor C2 C1 G1 Electrically Isolated Tab VCES = 3000V IC90 = 12A VCE(sat) ≤ 3.2V G2 E2C4 E1C3 G4 G3 C2 G2 E2C4 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions
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MMIX4B12N300
12N300
1-23-09-A
g4 pc 50 w
G2 - 395
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Untitled
Abstract: No abstract text available
Text: APTM10DHM05G Asymmetrical - Bridge MOSFET Power Module Application VBUS Q1 • • • • CR3 G1 OUT2 Q4 • CR2 G4 S4 0/VBUS • • - • OUT1 G1 VBUS Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features
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APTM10DHM05G
APTM10DHM05Gâ
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any 0.3mm pitch
Abstract: Dented
Text: 㪪㪿㪼㪼㫋㩷㪥㫆㪅㪈㪆㪌 Product Specification Taping Specification Type Number 䋺 SMini5 - G1 Transistors TX /L Prepared Checked Applied Established by by by by N.Kasuya T.Kubo S.Nakagawa 1.Scope This Standard should be applied to the specifications of taping for SMini5-G1 package transistors.
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P2804ND5G
Abstract: SEM 2005 p2804 niko P2804N g1id
Text: NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS ON S2 G2 D1 V(BR)DSS S2
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P2804ND5G
O-252-5
Apr-18-2005
P2804ND5G
SEM 2005
p2804
niko
P2804N
g1id
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AT-64020
Abstract: AT64020 AT-64023
Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk
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AT-64020
AT-64023
AT-64020
AT64020
AT-64023
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high speed Zener Diode
Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors
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136.21
Abstract: AT42010 AT-42010 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42010
AT-42010
AT42010
RN/50
5965-8910E
136.21
S21E
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micro-x 420
Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz
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AT-42036
AT-42036
me10/-0
5980-1854E
5988-4735EN
micro-x 420
AT-42036-BLK
AT-42036-TR1
S21E
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AT-42035
Abstract: No abstract text available
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42035
AT-42035
RN/50
5965-8911E
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8909E
Abstract: AT-42000 AT-42000-GP4 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42000
AT-42000
RN/50
5965-8909E
8909E
AT-42000-GP4
S21E
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AT42070
Abstract: AT-42070 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz
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AT-42070
AT-42070
AT42070
RN/50
5965-8912E
5966-4945E
S21E
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AT-42035
Abstract: micro-x 420 S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz
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AT-42035
AT-42035
RN/50
5965-8911E
5988-4734EN
micro-x 420
S21E
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APTM100SKM90
Abstract: No abstract text available
Text: APTM100SKM90 Q1 G1 OUT S1 CR2 0/VBUS G1 VBUS 0/VBUS OUT S1 Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
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APTM100SKM90
APTM100SKM90
APTM100SKM90
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AT-42035
Abstract: S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz
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AT-42035
AT-42035
RN/50
S21E
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Untitled
Abstract: No abstract text available
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz
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AT-42070
5965-8912E
5966-4945E
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Untitled
Abstract: No abstract text available
Text: APTM120SK15G Buck chopper MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • Q1 G1 AC and DC motor control Switched Mode Power Supplies Features OUT • S1 CR2 0/VBUS • • • G1 VBUS 0/VBUS
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APTM120SK15G
APTM120SK15Gâ
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APT0502
Abstract: APT0601 APTM120A20SG
Text: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated
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APTM120A20SG
APTM120A20SG
APT0502
APT0601
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siemens magnetic sensors ksy14
Abstract: B143-H6358-G1-X-7400 IC 7400 7400 ic 7400 B115-H6563-X-X-7600 7400+integrated
Text: S IE M EN S Literaturhinweise Information on Literature Literaturhinweise Information on Literature Auszug aus unserem Literaturverzeichnis 10.94 Exerpt to our Literature Guide 10.94 Bestell-Nr.: B192-H6763-G1-X-7400 Ordering No.: B192-H6763-G1-X-7400 Titel
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B192-H6763-G1-X-7400
H38-S2021
G3876
siemens magnetic sensors ksy14
B143-H6358-G1-X-7400
IC 7400
7400 ic
7400
B115-H6563-X-X-7600
7400+integrated
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