G14 DIODE MARKING Search Results

fmbg14

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-G14 １ 適用範囲 Scope この規格はFMB-G14 について適用する。 The present specifications shall apply to an FMB-G14L. ２ 概要 Outline 種 Type 別 ショットキーバリアダイオード Silicon Schottky Barrier Diode

FMB-G14

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-G14 1. Scope The present specifications shall apply to an FMB-G14L. 2. Outline High Frequency Rectification Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent

TSC5302DCH

Abstract: TSC5302DCP DIODE G14
Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

pcb diagram welding inverter

Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state

UC320

Abstract: CIRCUIT diagram welding inverter diode K14
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state

Contextual Info: Monolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8mm Tape and Reel 3 Use BAW156LT1 to order the 7 inch/3,000 unit reel Use BAW156LT3 to order the 13inch/10,000 unit reel

g14 DIODE marking

Abstract: DIODE G14 BAW156LT1 BAW156LT3 g1412 g14 DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8mm Tape and Reel 3 Use BAW156LT1 to order the 7 inch/3,000 unit reel

marking G14

Abstract: SMD diode g14
Contextual Info: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Product Features SOD-323F ◇ Fast switching device Trr<4.0nS ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate

g14 DIODE schottky marking

Abstract: marking S140 g14 DIODE marking S140 diode SMA marking 14 MARKING G14 DO-214AC STPS140A STPS140U sma inverters g14 diode
Contextual Info: STPS140 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 1A VRRM 40 V Tj (max) 150°C VF(max) 0.5 V FEATURES AND BENEFITS • ■ ■ ■ ■ SMA (JEDEC DO-214AC) STPS140A Very small conduction losses Negligible switching losses Low forward voltage drop

Industrial Drives

Abstract: vinco igbt
Contextual Info: 30-P2126PA050NB-L287F69Y datasheet flow PACK 2 1200 V / 50 A Features flow 2 17mm housing ● Mitsubishi generation 6.1 1200V technology for low saturation losses and improved EMC behavior ● Compact and low inductive design ● Integrated temperature sensor

g14 DIODE schottky marking

Contextual Info: STPS140 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 1A VRRM 40 V Tj (max) 150°C VF(max) 0.5 V FEATURES AND BENEFITS • ■ ■ ■ ■ SMA (JEDEC DO-214AC) STPS140A Very small conduction losses Negligible switching losses Low forward voltage drop

S140 st diode

Abstract: g14 DIODE schottky marking marking S140 St Diode S140 STPS140 st 03 s140 g14 DIODE marking S140 STPS140A STPS140U
Contextual Info: STPS140 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 1A VRRM 40 V Tj (max) 150°C VF(max) 0.5 V FEATURES AND BENEFITS • ■ ■ ■ ■ SMA (JEDEC DO-214AC) STPS140A Very small conduction losses Negligible switching losses Low forward voltage drop

ASE12

Abstract: b14 smd diode DIODE SMD b14 LP55281RLX smd transistor 2f en francais LP55281 LP55281RL LP55281TL LP55281TLX D56B
Contextual Info: LP55281 Quad RGB Driver General Description Features LP55281 is a quad RGB LED driver for handheld devices. It can drive 4 RGB LED sets and a single fun light LED. The boost DC-DC converter drives high current loads with high efficiency. The RGB driver can drive individual color LEDs or

1RFP054

Abstract: 15-17-In MAX7064
Contextual Info: OOlSMMfl G14 • INR International ic?R Rectifier PD.9544A 1RFP054 INTERNATIONAL RECTIFIER HEXFET Power M O SFET Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

b14 smd diode

Abstract: DIODE SMD b14 mark b14 smd diode marking B14 diode RGB DRIVER SPI LP55281RLX
Contextual Info: LP55281 LP55281 Quad RGB Driver Literature Number: SNVS458B LP55281 Quad RGB Driver General Description Features LP55281 is a quad RGB LED driver for handheld devices. It can drive 4 RGB LED sets and a single fun light LED. The boost DC-DC converter drives high current loads with high

2SK1581

Abstract: markingg14
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1581 SWITCHING N-CHANNEL MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1581, N-channel vertical type MOS FET, can be 2.8 ±0.2 0.4 +0.1 –0.05 driven by 2.5 V power supply. As the 2SK1581 is driven by low voltage and does not require

Contextual Info: TC7WG14FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG14FC Triple Schmitt Inverter Features • High-level output current: • High-speed operation: tpd = 4.0 ns typ. at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9~3.6 V •

Contextual Info: LP55281 www.ti.com SNVS458C – JUNE 2007 – REVISED MARCH 2013 LP55281 Quad RGB Driver Check for Samples: LP55281 FEATURES DESCRIPTION • LP55281 is a quad RGB LED driver for handheld devices. It can drive 4 RGB LED sets and a single fun light LED. The boost DC-DC converter drives high

2SK1581

Abstract: FET MARKING TC-2296A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK 1581 N -C H A N N E L M O S FET FOR S W IT C H IN G The 2SK1581, N-channel vertical typ e MOS FET, can be driven by PACKAGE DIMENSIONS Unit : mm 2.5 V power supply. 2.8± 0.2 <-•O do +l Ò 1.5 As the MOS FET is driven by low voltage and does not require con­

Contextual Info: LP55281 www.ti.com SNVS458C – JUNE 2007 – REVISED MARCH 2013 LP55281 Quad RGB Driver Check for Samples: LP55281 FEATURES DESCRIPTION • LP55281 is a quad RGB LED driver for handheld devices. It can drive 4 RGB LED sets and a single fun light LED. The boost DC-DC converter drives high

TC7WG14FC

Contextual Info: TC7WG14FC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WG14FC Triple Schmitt Inverter Features • High-level output current: • High-speed operation: tpd = 4.0 ns typ. at VCC = 3.3 V,15pF • Operating voltage range: VCC = 0.9~3.6 V •

Contextual Info: 70-W424NIA800SH-M800F target datasheet 2xflow NPC 4w 2400V/800A Features 2xflow SCREW 4w 12mm housing ● 2400V NPC-topology ● Low inductive ● High power screw interface ● Integrated DC-snubber capacitors ● assymetrical inductance technology Target Applications

STW8T16C

Abstract: SMD MARKING CODE h23 H24 SMD DIODE smd marking H24 z5 smd zener diode code D5 smd diode marking B3 MARKING G43
Contextual Info: Z-Power LED X10490 Technical Data Sheet RoHS Specification SSC-STW8T16C SSC-STW8T16C March 2013 www.seoulsemicon.com 서식번호 : SSC-QP-7-07-12 Rev.01 Z-Power LED X10490 Technical Data Sheet STW8T16C Description This surface-mount LED comes in standard