G2 SOT Search Results

Marking G2

Abstract: BF599
Contextual Info: SEMICONDUCTOR BF599 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G2 No. 1 Item Marking Device Mark G2 BF599 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

high speed Zener Diode

Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
Contextual Info: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

MMO90

Abstract: 90-12io6 IXYS MMO90
Contextual Info: MMO 90 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 90 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 90-12io6 MMO 90-16io6 K2/A1 G2 G2 K1/A2 Test Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

Contextual Info: MMO 74 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 74 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 74-12io6 MMO 74-16io6 K2/A1 G2 G2 K1/A2 Symbol Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

9012IO

Contextual Info: MMO 90 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 90 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 90-12io6 MMO 90-16io6 K2/A1 G2 G2 K1/A2 Test Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

IGD 001

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

UV 471

Abstract: intel embedded microcontroller handbook XA-G2 XA-G3 XA-G37 80C51 XA User Guide
Contextual Info: INTEGRATED CIRCUITS XA-G1, XA-G2, XA-G3 XA 16-bit microcontroller family 32K–8K/512 OTP/ROM/ROMless, watchdog, 2 UARTs Product specification Supersedes data of 1998 Feb 25 Replaces data sheets XA-G1 and XA-G2 of 1997 Mar 25 IC25 Data Handbook Philips Semiconductors

mosfet 4800

Abstract: 4800 mosfet sot-363 n-channel mosfet sot-363 p-channel mosfet MOSFET P SOT-23 sot-23 P-Channel MOSFET Complementary MOSFETs 2N7002 BSS84 BSS8402DW
Contextual Info: New Product Announcement May 2003 Introducing New Complementary Pair MOSFETs in SOT-363 Package: BSS8402DW A D2 G1 SOT-363 S1 B C S2 G2 D1 G H K M J D D2 G1 L F S1 Q1 Q2 S2 G2 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80

1012S

Abstract: Q62702-F1627 BF1012S
Contextual Info: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol

Contextual Info: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Simple Drive Requirement BVDSS S1 D1 Smaller Outline Package RDS ON G2 Surface mount package SOT-26 RoHS compliant 30V 72m ID S2 3.3A G1 Description

Contextual Info: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package SOT-26 ▼ RoHS compliant BVDSS 30V RDS ON 72mΩ ID S2

ISS306

Contextual Info: AP1430GEU6-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET S2 ▼ Simple Gate Drive G2 D1 ▼ Small Package Outline D2 ▼ Embedded Protection Diode G1 ▼ RoHS Compliant & Halogen Free SOT-363 S1 BVDSS 60V

Contextual Info: AP1430GEU6-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET S2 Simple Gate Drive BVDSS G2 D1 Small Package Outline D2 G1 Embedded Protection Diode RoHS Compliant & Halogen Free SOT-363 S1 60V RDS ON 2.5 ID 230mA

Contextual Info: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package SOT-26 ▼ RoHS compliant BVDSS 30V RDS ON 72mΩ ID S2

AP2531GY-HF-3TR

Contextual Info: Advanced Power Electronics Corp. AP2531GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance N-CH D2 S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description

Contextual Info: AP2626GY-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free SOT-26 BVDSS 30V RDS ON

AP2626GY

Contextual Info: AP2626GY Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Simple Drive Requirement S1 D1 ▼ Smaller Outline Package G2 ▼ Surface mount package 30V RDS ON 72mΩ ID S2 SOT-26 ▼ RoHS compliant BVDSS

Contextual Info: Advanced Power Electronics Corp. AP2530GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Low Gate Charge Low On-resistance N-CH D2 S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description BV DSS

Contextual Info: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23

Contextual Info: AP2533GY-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS S1 Fast Switching Performance RDS ON D1 Surface Mount Package 150m ID G2 RoHS Compliant & Halogen-Free SOT-26 16V

Contextual Info: AP2530AGY-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS S1 Fast Switching Performance RDS ON D1 Surface Mount Package 72m ID G2 RoHS Compliant & Halogen-Free SOT-26 30V

Contextual Info: Advanced Power Electronics Corp. AP2533GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge N-CH D2 BV DSS S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description

Contextual Info: AP2625GY-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low Gate Charge S1 D1 ▼ Capable of 2.5V Gate Drive G2 ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free SOT-26 S2 BVDSS -30V RDS ON