G25N Search Results

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

V70H

Abstract: V30L BPF H287BSJS-4438HWD ccd bm AN3501NFBP QFH084-P-1818B V30M XO 18 CT20-18 V20-25P
Contextual Info: ICs for VCR AN3501NFBP Luminance, chroma and linear audio signal processing IC for VCR • Overview Unit: mm 21.2±0.2 18.0±0.2 63 43 42 84 22 0.6±0.2 0.80 0.35+0.1 –0.05 Seating plane ■ Features 0.1±0.1 1.55±0.1 3.25±0.2 21 0.15+0.1 –0.05 1 1.0

MIL-M-38510H

Abstract: 30n220 LI 1806 E 151 R temic 3x 995 TL 650 ht EZ 039 LEA6 D-10 MS-016 KT 783
Contextual Info: M H S MECHANICAL OUTLINE DICTIONARY 4 . I N D E X A R E A - ► 1 - . . . . . . PINS . PLASTIC . .3 0 0 . [H I . . . D — E — -! A •K j. J. ! £ J. eA C eB M 1 A 2 B 1 1 1 8 . 7 . 6 . e 2 e A 7 9 3 . . . 2 L 1

MG20G6EL2

Abstract: 359RGA MG30G6EL2 4a2d Burr-Brown IC data book free download MG20Q6EK1 MG25N6EK1 MG10G6EL2 2108A MG50G6EL1
Contextual Info: - 222 N P N , ? '— ’•} y \ y • \ V y y s y tm 4 ffl/ 6 flW g % 9 £ 4 AS/ 6 flSftjêt K S H iS g EL-l 7 r x l- y JS iK c k ä f g ^ it íím íS ü t » t t 8 0R i ( 8 « S c t ) Œ 2 . A C , 1^ bT, t i l . T c=25‘C* « V CBO ¡ V CEX \ V CEO

g25n120

Abstract: SGW25N120 PG-TO-247-3-21 G25N120 TSC
Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour

g25n120

Abstract: IKW25N120H3 IDH15S120 igw25n120 IgW25N120H3 pspice high frequency igbt
Contextual Info: IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching series third generation Data sheet Industrial & Multimarket IGW25N120H3 High speed switching series third generation

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

150 g35 capacitor

Abstract: 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2
Contextual Info: GAP CAPS dielectric laboratories Precision Series Capacitors for Microwave Applications Part Number G 15 BH 100 K 5 P X 10 Product Code Gap Width In Mils Case Size Test Code Material Code Termination Code Capacitance Code Voltage Rating WVDC Tolerance Code

V70H

Abstract: V30L matsushita tuner vcr AN3501NFBP QFH084-P-1818B V30M an3501 ct2554 matsua tuner vcr V30H
Contextual Info: ICs for VCR AN3501NFBP Luminance, chroma and linear audio signal processing IC for VCR • Overview Unit: mm 21.2±0.2 18.0±0.2 M Di ain sc te on na tin nc ue e/ d The AN3501NFBP is a luminance, chroma signal processing IC for VCR PAL and NTSC . It also integrates a playback equalizer and an NTSC playback circuit.

g25n120

Abstract: PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 sgw25n120 M/250w smps inverter circuits
Contextual Info: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

MG20G6EL1

Abstract: MG15G4GL1 MG30G6EL1 MG50G6EL1 MG20Q6EK1 MG25N6EK1 MG30G6EL2 MG20G6EL2 MG15G6EL1 MG10G6EL2
Contextual Info: - 222 N P N , ? '— ’•} y \ y • \ V y y s y tm 4 ffl/ 6 flW g % 9 £ 4 AS/ 6 flSftjêt K S H iS g EL-l 7 r x l- y JS iK c k ä f g ^ it íím íS ü t » t t 8 0R i ( 8 « S c t ) Œ 2 . A C , 1^ bT, t i l . T c=25‘C* « V CBO ¡ V CEX \ V CEO

MG30G2CL3

Abstract: MG50M2CK2 MG75H2CL1 MG25M2CK2 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y MG15N2YK1
Contextual Info: - 218 — n p n , > o 9 - ' y \ v • o y : i- * 'í) l- f ''í± - F i4 Vauxnv - i n « 2 flü ü fflü g tl) asn o s CK-1 / 'W W ^ U K U . lu i. t CK-2 tu o ¡>j± o Y - V T o BI y h / H 1’ c r ) i¡'±/\ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * m % V CBO

MG40S2YK1

Abstract: MG30G2CL3 MG25M2CK2 MG50M2YK9 MG50M2CK2 MG50G2CL3 MG25M2YK9 TA8250 MG15N2YK1 MG25M2YK1
Contextual Info: - 218 — n p n o 9 - ' y \ v • o y : i - * 'í ) l - f ''í ± - F i 4 Vauxnv , > - i n « 2 flü ü fflü g tl) a s n o s CK-1 /'WW^UKU.lui.t CK-2 tu o ¡> j± o Y - V T o BI y h / H 1’ c r ) i¡'± / \ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * V CBO

Contextual Info: G25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited