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    G30N60 IGBT Search Results

    G30N60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    G30N60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g30n60

    Abstract: PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 G30N60 PG-TO-220-3-1ain g30n60 PG-TO-220-3-1 G30N60 IGBT PG-TO220-3-1 equivalent to g30n60 PG-TO-247-3-21 SGP30N60 SGW30N60 100W-50W g30n60 data sheet

    g30N60

    Abstract: G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 G30N60 SGW30N6ntain g30N60 G30N60 IGBT g30n60 infineon equivalent to g30n60 SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 igbt 1000v 30a

    G30N60

    Abstract: G30N60 IGBT g30n60 infineon SGW30N60 PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3 SGW30N60 G30N60 G30N60 IGBT g30n60 infineon PG-TO-220-3-1 IGBT 400V 100KHZ 30A igbt 600V 30A

    g30n60

    Abstract: equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21
    Text: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW30N60 g30n60 equivalent to g30n60 G30N60 IGBT g30n60 infineon 0/equivalent to g30n60 PG-TO-247-3-21

    G30N60

    Abstract: G30N60 IGBT JESD-022
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 PG-TO-263-3-2 O-263AB) SGB30N60 G30N60 G30N60 IGBT JESD-022

    G30N60

    Abstract: No abstract text available
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 P-TO-263-3-2 O-263AB) G30N60 G30N60

    G30N60

    Abstract: G30N60 IGBT equivalent to g30n60
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 SGB30N60 G30N60 G30N60 IGBT equivalent to g30n60

    G30N60

    Abstract: copper bond wire infineon G30N60 IGBT
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 P-TO-263-3-2 O-263AB) SGB30N60 G30N60 copper bond wire infineon G30N60 IGBT

    g30n60

    Abstract: G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ
    Text: SGB30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB30N60 PG-TO-263-3-2 O-263AB) G30N60 g30n60 G30N60 IGBT equivalent to g30n60 1 L 0380 PG-TO-263-3-2 SGB30N60 30mJ