GA 113 Search Results

infineon c167 bare die

Abstract: ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 C167CR SAK-C167CR-4RC
Contextual Info: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-xC, Bare Die, Step GA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-xC Step GA C167CR-xC Revision History: (Bare Die Delivery) 1999-11, Step GA Previous Versions: 1999-11

NE3505M04

Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only

NE24200

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip

DADR11

Abstract: CXA1951AQ CXD2931GA-9 CXD2931R-9 NMEA0183
Contextual Info: CXD2931R-9/GA-9 1 chip GPS LSI Description The CXD2931R-9/GA-9 is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, 2M-bit MASK ROM, RAM, UART, timer, and others. This LSI, used together with the RF LSI (CXA1951AQ),

CXA1951AQ

Abstract: CXD2931GA-9 CXD2931R-9 NMEA0183
Contextual Info: CXD2931R-9/GA-9 1 chip GPS LSI Description The CXD2931R-9/GA-9 is a dedicated LSI for the GPS Global Positioning System satellite-based position measurement system. This LSI contains a 32-bit RISC CPU, 2M-bit MASK ROM, RAM, UART, timer, and others. This LSI, used together with the RF LSI (CXA1951AQ),

NE76000

Abstract: NE76000L AF127
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm

RN501

Abstract: NE76000 NE76000L 150J10
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

Contextual Info: 821 FIBER SENSORS Compact Inductive Proximity Sensor Amplifier-separated GA-311 GH SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1386~ ■■Sensor selection guide. P.757~

KMM374S1623DT-GA

Contextual Info: KMM374S1623DT PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. Revision 0.1 (June, 1999) - Changed PCB Dimensions in PACKAGE DIMENSIONS REV. 0.1 June 1999 KMM374S1623DT PC133 Unbuffered DIMM KMM374S1623DT-GA SDRAM DIMM

LG VARIABLE FREQUENCY DRIVE is3

Abstract: ADZ8
Contextual Info: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features ga Pin/Code Compatible with all 80960Jx Processors a High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS Ix the Bus Clock

AT-30533-TR1

Abstract: AT-310 AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA

AS3010

Abstract: MXT4400 MXT3010 fpga based Numerically Controlled Oscillator
Contextual Info: AccessMaker Operations Guide Version 4.1 This document applies to AccessMaker Release 4.08 GA Order Number: 100517-05 M Maker Communications, Inc. 73 Mount Wayte Avenue Framingham, Massachusetts 01702 June 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved.

128MX64

Abstract: DQ-41 u25 8pin
Contextual Info: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853CC-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM WITH CONFORMAL COATING Description: The VL466S2853CC is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory

AT-32011-BLK

Abstract: AT-32011 AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA

AT-310

Abstract: AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1 AT31033 5965-8919E
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA

AT-320

Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 sot-23 marking code 352
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA

sot-23 marking code 352

Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-30533-BLK AT-30533-TR1 AT-310 AT30533
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-30511: 1.1 dB NF, 16 dB GA

Contextual Info: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853CC-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM WITH CONFORMAL COATING Description: The VL466S2853CC is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory

AT-310

Abstract: AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1 c550c 593 MARKING CODE SOT23
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA

Contextual Info: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz • High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5319

Contextual Info: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz · High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol

ARM250

Abstract: Free Projects with assembly language 8086 StrongArm110 ARM600 ARM 7TDMI 32 BIT MICROPROCESSOR Arm610 ARMv2a asm68k ARM920T 1997 JEENI
Contextual Info: Microcross i.MX GNU X-Tools Professional Embedded Development Toolsuite User Guide Version 3.40d 2005-2006 Microcross, Inc. Licensed Materials Open-Source, Ready-to-Run ™ Contents ISBN: N/A Microcross, Inc. 104 Borders Way, Suite 100 Warner Robins, GA 31088

LM396

Abstract: lm396 high voltage regulator LM396K lm396k steel p lm196
Contextual Info: LM196/LM396 ga National mM Semiconductor LM196/LM396 10 Amp Adjustable Voltage Regulator General Description The LM196 is a 10 amp regulator, adjustable from 1,25V to 15V, which uses a revolutionary new IC fabrication structure to combine high power discrete transistor technology with