GA05 Search Results

Contextual Info: 9615 SW Allen, S u ite 103 Bea.vert.orL, OR 97005 Phone: 503 6 4 3 — 4899 8 0 0 -2 7 5 — 4899 Fax: (503) 3 7 2 -1 2 6 6 Website: www.cui.com S ^ C U I INC Specifications Part No. 1 2 GA0571M Nominal Size 57 3 Impedance 4 Resonance 450 S.P. Level 88 5

Contextual Info: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

GA05JT06-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: GA05JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA05JT06-CAL.

Contextual Info: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: GA05JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) Features •        = = = = 1200 V 210 mΩ 15 A 80 Package 250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch

Contextual Info: GA05JT12-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA05JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.

Contextual Info: 9615 SW Allen, S u ite 103 Bea.vert.orL, OR 97005 Phone: 503 6 4 3 — 4899 8 0 0 -2 7 5 — 4899 Fax: (503) 3 7 2 -1 2 6 6 Website: www.cui.com CUI INC Specifications Part No. 1 2 GA0576 Nominal Size 57 3 Impedance 4 Resonance 360 S.P. Level 88 5 Response

GA0501M

Abstract: GA0661M GF0502M speaker oval GA0501 GF0506M
Contextual Info: 1 K — 5 INCH ALNICO & FERRITE MAGNET, MYLAR CONE SPEAKER GA0381M GA0401M GA0576M GA0451M GA0661M GA0876M GA0501M GA0666M GF0501M GA0506M GA0701M MODEL S IZ E FRAME RESONANT FREQ HZ STYLE NO. INCH M/M GA0771M GF0506M frame style GA0506M-1 GA0776M GF0502M

GA0701

Abstract: speaker oval GA0401 GA0926
Contextual Info: 1V i~ 4 INCH ALNICO MAGNET, PAPER CONE SPEAKER L rt GA0381 GA0401 GA0571H GA0451 GA0661 GA0776 GA0501 GA0666 GA0506 GA0701 GA0876 S IZ E INCH FRAME RESONANT FREQ HZ STYLE M/M GA0771 ±20% R: round FREQ. 1H GA0501 iy 2 1Va 2 GA0506 2 GA0401 GA0451 GA0571 GA0576

IRFD630

Abstract: HCPL-322J HCPL322J TO-247AB
Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: Part No: GA0576M 6Date: 9/26/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level 57 mm 2.00 in 8 Ohm ± 15% 500 Hz ± 100 Hz 80 dB/w ± 3 dB (See attached drawing) at 800 Hz 1 V

Contextual Info: Part No: GA0576 Date: 9/22/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level Response Input power Operation Buzz, rattle, etc. Magnet Load test Heat test Humidity test 57 mm 5.25 in

Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: Part No: GA0571M Date: 9/29/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level 57 mm 2.25 in 8 Ohm ± 15% 450 Hz ± 90 Hz 88 dB/w ± 3 dB (See attached drawing) at 800 Hz 1 V at

Contextual Info: Part No: GA0506M Date: 9/26/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level 50 mm 2.00 in 8 Ohm ± 15% 500 Hz ± 100 Hz 79 dB/w ± 3 dB (See attached drawing) at 800 Hz 1 V

Contextual Info: Part No: GA0506 Date: 9/22/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level 50 mm 2.00 in 8 Ohm ± 15% 430 Hz ± 86 Hz 88 dB/w ± 3 dB (See attached drawing) at 800 Hz 1 V at

GA0501M

Abstract: GA0501 Potentiometer 100 ohm 78KHZ
Contextual Info: Part No: GA0501M Date: 9/29/2006 Unit: mm Description: speaker Page No: 1 of 2 Specifications Nominal Size Impedance Resonant frequency Sound pressure level Response Input power Operation Buzz, rattle, etc. Magnet Load test Heat test Humidity test 50 mm 2.00 in

Contextual Info: GA05JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA05JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-Jun-2015 $ * * GeneSiC Semiconductor Inc.

GA05JT0146_SPICE

Contextual Info: GA05JT01-46 Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4 software for simulation of the GA05JT01-46. * MODEL OF GeneSiC Semiconductor Inc.

Contextual Info: 9616 SW Allen, Suite 103 Beaverton, OR 07005 Phone: 503 6-43—4809 8 0 0 —2 7 5 — 4899 Fax: (50 3) 3 7 2 -1 2 6 6 Website: m n r.cu l.co m CUI INC Specifications Part No. 1 2 GA0571H Nominal Size 57 3 Impedance 4 Resonance 420 S.P. Level 91 5 Response

Contextual Info: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features •       250 °C maximum operating temperature Temperature independent switching performance

Contextual Info: Die Datasheet GA05JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 240 mΩ 15 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

diode 0A70

Abstract: GA05JT01-46
Contextual Info: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity