GAAS 0.15 PHEMT Search Results

60Ghz

Abstract: CHA2157
Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3stage GaAs MMIC amplifier chip utilizing Fairchild Semiconductor's advanced 0.15 µm gate length Power PHEMT

15 GHz power amplifier Output Power 37dBm

Abstract: AN0017 CHA5052-QGG
Contextual Info: CHA5052-QGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT

A5052A

Abstract: AN0017 CHA5052
Contextual Info: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

AN0017

Abstract: CHA5056-QGG
Contextual Info: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

PCB Rogers RO4003 substrate

Abstract: AN0017 MO-220 RO4003 QFN 5x5 Rogers RO4003
Contextual Info: PA-P013663-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The PA-P013663-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

PCB Rogers RO4003

Abstract: AN0017 RO4003 PCB Rogers RO4003 substrate
Contextual Info: PA-P013664-QGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC Description The PA-P013664-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through

Contextual Info: PHEMT GaAs 1C Transmit/Dual Receive Switch With Diversity Antennas 0.5-2 GHz ESAlpha AS160-86 F eat ur e s • Five RF Ports M S O P - 10 pini° —nnnnn' ■ Transmit to Either of Two Antennas 0.193 0.118 3.00 mm ± 0.006 (0.15 mm) ■ Receive From Either of Two Antennas

3000 watt power amplifier circuit diagram

Abstract: 15 watt power supply circuit diagram power amplifier mmic
Contextual Info: RMPA29000 27-30 GHz 1 Watt Power Amplifier MMIC Description Features The Fairchild Semiconductor RMPA29000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29000 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

amplifier circuit diagram 1000 watt

Abstract: 1000 watt AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: iTR39100 37-40 GHz 1 Watt Power Amplifier MMIC Description Features The iTR39100 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39100 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15 m gate length Power PHEMT process and

15 watt power supply circuit diagram

Contextual Info: iTR39200 37-40 GHz 1.6 Watt Power Amplifier MMIC Description Features The iTR39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39200 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15 m gate length Power PHEMT process and

RMDA25000

Contextual Info: RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Fairchild Semiconductor's RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

GaAs 0.15 um pHEMT

Abstract: Ultra low noise amplifier GaAs 0.15 pHEMT
Contextual Info: Ultra Low Noise An Ci IX Y Scompari Ultra Low Noise pHEMTS • Low Noise Figure MwT-LNZOO MwT-LN600 • High A ssociated Gain 3 0 0 //. 6 6 0 0 / 1.5 • O peration u p to 30 GHz • 0.15 um GaAs p H e m t Process • Com m ercial Applications • M ilitary A pplications

15 watt power supply circuit diagram

Contextual Info: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

HMC617

Abstract: 616LP3E HMC616LP3 HMC616LP3E HMC617LP3 HMC618LP3
Contextual Info: HMC616LP3 / 616LP3E v00.0508 LOW NOISE AMPLIFIERS - SMT 5 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3 E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure

HMC617

Abstract: 616LP3E HMC616LP3 HMC616LP3E HMC617LP3 HMC618LP3 GaAs 0.15 pHEMT HMC616
Contextual Info: HMC616LP3 / 616LP3E v01.1008 LOW NOISE AMPLIFIERS - SMT 5 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3 E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure

Contextual Info: HMC616LP3 / 616LP3E v02.0610 Amplifiers - low Noise - smT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HmC616lp3 e is ideal for: low Noise figure: 0.5 dB • Cellular/3G and lTe/wimAX/4G High Gain: 24 dB • BTs & infrastructure

0.47 uf CAPACITOR

Abstract: HMC616LP3
Contextual Info: HMC616LP3 / 616LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz Typical Applications Features The HMC616LP3 E is ideal for: Low Noise Figure: 0.5 dB • Cellular/3G and LTE/WiMAX/4G High Gain: 24 dB • BTS & Infrastructure

AS160-86

Abstract: MSOP-10
Contextual Info: Preliminary PHEMT GaAs IC Transmit/Dual Receive Switch With Diversity Antennas 0.5–2 GHz AS160-86 Features MSOP-10 • Five RF Ports PIN 10 ■ Transmit to Either of Two Antennas ■ Receive From Either of Two Antennas ■ Differential Biasing for High Linearity

AS160-86

Abstract: MSOP-10
Contextual Info: Preliminary PHEMT GaAs IC Transmit/Dual Receive Switch With Diversity Antennas 0.5–2 GHz AS160-86 Features MSOP-10 • Five RF Ports PIN 10 ■ Transmit to Either of Two Antennas PIN 1 INDICATOR ■ Receive From Either of Two Antennas ■ Differential Biasing for High Linearity

Contextual Info: MICROWAVE CORPORATION HMC463 v00.0403 GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC463 is ideal for: Gain: 14 dB • Telecom Infrastructure Noise Figure: 2.5 dB @ 10 GHz • Microwave Radio & VSAT