GAAS 1000 NM INFRARED EMITTING DIODE Search Results

smd diode GW

Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

smd diode GW

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

VTE1063

Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
Contextual Info: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters

TSAL5300

Contextual Info: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 940 nm • High reliability

TSAL5300

Contextual Info: TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

TSTS7300

Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity

TSAL5300-MSZ

Contextual Info: TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm

TSTS7100

Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity

TSAL5100

Abstract: Infrared Emitting Diode
Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm

TSAL5100

Abstract: high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,
Contextual Info: TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in

TSAL6100 application

Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity

TSAL6100

Abstract: high power infrared led
Contextual Info: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

Vishay Semiconductors tsts7500

Abstract: TSTS7500
Contextual Info: TSTS7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity

VSMS3700

Abstract: VSMS3700-GS08 VSMS3700-GS18
Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°

J-STD-020D

Abstract: VSMS3700 VSMS3700-GS08 VSMS3700-GS18
Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 Peak wavelength: λp = 950 nm

J-STD-020D

Abstract: VSMS3700 VSMS3700-GS08 VSMS3700-GS18
Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability

Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE

Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE

GaAs 1000 nm Infrared Diode,

Abstract: TEKS5400 TSKS5400S J-STD-051
Contextual Info: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power

TSAL4400

Abstract: APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led
Contextual Info: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

TSAL7200

Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity

TSAL7400

Abstract: high power infrared led
Contextual Info: TSAL7400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

high power infrared led

Abstract: TSAL7600
Contextual Info: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power