GAAS 3 GHZ RF AMPLIFIER OPERATING TEMPERATURE Search Results

spf-5043

Abstract: spf5043z SPF-5043Z SPF5043 EVB1 mch185a101jk a1 mmic 80021 MMIC AMPLIFIER 6-20 GHZ TAJB104KLRH
Contextual Info: Preliminary Information SPF-5043Z Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

spf 51z

Abstract: 0/spf 51z
Contextual Info: Advanced Information SPF-5122Z 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

4350Z

Contextual Info: Advanced Information SPF-5043Z 400-3000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

DM6030HK

Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

XD9001

Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

XP1001

Abstract: XU1001 84-1LMI P1001 XB1002
Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD November 2006 - Rev 15-Nov-06 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: HMC261 v01.0500 MICROWAVE CORPORATION GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC261 is ideal for: Stable Gain vs. Temperature: 14dB ± 1.5dB • MMW Point-to-Point Radios High Reverse Isolation: 40 ~ 50 dB

Contextual Info: HMC262 v01.0500 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC262 LNA is ideal for: Excellent Noise Figure: 2dB • Millimeter Wave Point-to-Point Radios Stable Gain vs Temperature: 25 dB ± 1.5 dB

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

XP1019-BD

Abstract: P1019-BD
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD October 2008 - Rev 10-Oct-08 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain

pHEMT transistor MTBF

Contextual Info: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match

PCB Rogers RO4003

Abstract: 0170 v1 RO4003 XP1000 XP1000P1
Contextual Info: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier P1000P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

P1000 diode

Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain

XD9001

Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 30-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

ID430

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain

XD9001

Abstract: D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 XD1008 DM6030HK TS3332LD
Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier February 2009 - Rev 05-Feb-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 26.0-40.0 GHz GaAs MMIC Power Amplifier January 2007 - Rev 26-Jan-07 P1001-BD Features Chip Device Layout High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 10.0 dB Small Signal Gain

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: MICROWAVE CORPORATION HMC262 v01.0500 GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC262 LNA is ideal for: Excellent Noise Figure: 2dB • Millimeter Wave Point-to-Point Radios Stable Gain vs Temperature: 25 dB ± 1.5 dB