GAAS DIODE Search Results
GAAS DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CUZ12V |
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Zener Diode, 12 V, USC |
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GAAS DIODE Datasheets Context Search
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Contextual Info: 2013-08-01 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.1 IRL 80 A Features: Besondere Merkmale: • GaAs infrared emitting diode • Clear plastic package with lateral emmision • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche |
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D-93055 | |
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Contextual Info: TSIP760. Vishay Telefunken GaAs/GaAlAs IR Emitting Diodes in ø 5 mm Package Description The TSIP76.–series are infrared emitting diodes in GaAlAs on GaAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
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TSIP760. TSIP76. D-74025 20-May-99 | |
OHRD1938
Abstract: BPX osram GEOY6021 Q62703-Q395 Q62703-Q67 LD261-1
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Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability |
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GEOY6137 | |
BPX osram
Abstract: GEOY6021 OHRD1938 Q62703-Q395 Q62703-Q67
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Q65110A3337
Abstract: BPX osram GEOY6021 OHRD1938 Q62703-Q395
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3LD261Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability |
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Q62703-Q395 Q62703-Q67 GEOY6021 3LD261 | |
GEOY6137
Abstract: OHRD1938 Q62702-P835 OHR01042
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GEO06021
Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
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OHR01878 GEO06021 GEO06021 OHRD1938 Q62703-Q395 Q62703-Q67 | |
GEO06137
Abstract: OHRD1938 Q62702-P835
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OHR01886 GEO06137 GEO06137 OHRD1938 Q62702-P835 | |
TSIP520
Abstract: TSIP5200 TSIP520I
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TSIP520. TSIP52. 16-Oct-% 16-Oct-96 TSIP520 TSIP520 TSIP5200 TSIP520I | |
TSAL7600Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7600 TSAL7600 D-74025 20-May-99 | |
IEC 62471 osram
Abstract: IEC-61760-1 LPT 80a
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D-93055 IEC 62471 osram IEC-61760-1 LPT 80a | |
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Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7600 TSAL7600 D-74025 20-May-99 | |
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TSAL7600Contextual Info: TSAL7600 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7600 TSAL7600 D-74025 20-May-99 | |
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Contextual Info: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 … LD 264 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 80-Serie • Miniatur-Gehäuse Features • GaAs infrared emitting diode |
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80-Serie GEOY6367 | |
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Contextual Info: TSAL7600 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7600 TSAL7600 D-74025 20-May-99 | |
TSAL7600Contextual Info: TSAL7600 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7600 TSAL7600 D-74025 20-May-99 | |
TSAL7300Contextual Info: TSAL7300 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL7300 TSAL7300 D-74025 20-May-99 | |
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Contextual Info: TSMF2000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF2000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % |
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TSMF2000 TSMF2000 D-74025 09-Sept-99 | |
TSAL5100 Vishay
Abstract: TSAL5100
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TSAL5100 TSAL5100 D-74025 20-May-99 TSAL5100 Vishay | |
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Contextual Info: TSMF1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % |
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TSMF1000 TSMF1000 D-74025 17-Feb-00 | |
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Contextual Info: TSAL5100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
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TSAL5100 TSAL5100 D-74025 20-May-99 | |
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Contextual Info: TSML1000 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø SMD Package Description TSML1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % |
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TSML1000 TSML1000 D-74025 17-Jan-00 | |