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    GAAS FET EFA025A Search Results

    GAAS FET EFA025A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2137EA/250G4
    		Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/250
    		Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/2K5
    		Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA132UA/2K5
    		Texas Instruments High Speed FET-Input Operational Amplifiers 8-SOIC -40 to 125 Visit Texas Instruments Buy
    OPA137NA/250
    		Texas Instruments Low Cost FET-Input Operational Amplifiers 5-SOT-23 -40 to 85 Visit Texas Instruments Buy

    GAAS FET EFA025A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EFA025AL

    Contextual Info: EFA025AL High Gain GaAs Power FET FEATURES • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,


    Original     		EFA025AL 12GHz 18GHz EFA025AL PDF

    EFA025AL

    Contextual Info: Excelics EFA025AL DATA SHEET High Gain GaAs Power FET • • • • • • 420 +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,


    Original     		EFA025AL 12GHz 18GHz EFA025AL PDF

    100MIL

    Abstract: GaAs FET EFA025A
    Contextual Info: EFA025A-100P Low Distortion GaAs Power FET UPDATED 11/17/2006 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +21.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		EFA025A-100P 100MIL 12GHz 18GHz GaAs FET EFA025A PDF

    EFA025A

    Contextual Info: EFA025A Low Distortion GaAs Power FET FEATURES 420 50 • • • • • • • +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE


    Original     		EFA025A 12GHz 18GHz 12GHz EFA025A PDF

    EFA025A

    Contextual Info: Excelics EFA025A DATA SHEET Low Distortion GaAs Power FET • • • • • • •  +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE


    Original     		EFA025A 12GHz 18GHz Rn/50 EFA025A PDF

    EFA025A-70

    Abstract: EFA025
    Contextual Info: Excelics EFA025A-70 DATA SHEET Low Distortion GaAs Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz


    Original     		EFA025A-70 70mil 12GHz 18GHz EFA025A-70 EFA025 PDF

    EFA025A-70

    Contextual Info: EFA025A-70 Low Distortion GaAs Power FET UPDATED 04/28/2006 FEATURES • • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 12GHz 7.0 dB Power Gain at 18GHz Typical 1.50 dB Noise Figure and


    Original     		EFA025A-70 70mil 12GHz 18GHz Rn/50 EFA025A-70 PDF

    b1415

    Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
    Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs


    Original     		RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89 PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C PDF