GAAS FET MARKING M Search Results

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

GSO05553

Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

GaAs FET cfy 19

Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

gaas fet marking B

Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Contextual Info: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source

XMFP1-M3

Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Contextual Info: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••

gaas fet marking B

Abstract: FET GAAS marking a PS720C
Contextual Info: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1  LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS

Siemens A 1458

Abstract: FET marking code 365
Contextual Info: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,

HMC216MS8

Contextual Info: OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations

CLY10

Contextual Info: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J

CFY30

Abstract: CFY 18
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

SIEMENS 230 92 O

Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7801F-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 0.9 pF 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801F-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

PS7801K-1A

Abstract: PS7801K-1A-F3-A
Contextual Info: Solid State Relay OCMOS FET PS7801K-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 1.6 pF , 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801K-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7801M-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 3.4 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801M-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Contextual Info: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801M-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 3 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801M-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7804-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7804-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

NEC MARKING surface

Contextual Info: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7801D-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 0.6 pF , 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801D-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

PS7802A-1A

Abstract: PS7802A-1A-A PS7802A-1A-F3 PS7802A-1A-F3-A
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7802A-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802A-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7801K-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 1.6 pF , 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801K-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,