GAAS FET S2P Search Results

Curtice

Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Contextual Info: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the

8712 RESISTOR

Abstract: NES1823M-180
Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high

NES1823S-90

Contextual Info: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency

J3780

Abstract: IMT-2000 NES1823M-240 J4083
Contextual Info: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high

NE650103M

Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and

IMT-2000

Abstract: NES1823S-45
Contextual Info: DATA SHEET GaAs FET NES1823S-45 45 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA IMT-2000 base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW)

NE650103M

Abstract: NE650103M-A
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and

NES1823M-240

Abstract: j3780
Contextual Info: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high

NES1823M-180-A

Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high

NEC JAPAN

Abstract: NE960R2 NE960R200 NE960R275
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

NE960R5

Abstract: NE960R500 NE960R575
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear

Contextual Info: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This

AM010MH2-BI

Abstract: pt 4115 25302
Contextual Info: AM010MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM010MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

AM020MH2-BI-R

Contextual Info: AM020MH2-BI-R Aug 2010 Rev 4 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM020MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications.

Contextual Info: AM010MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This

PT 4115

Abstract: maximum gain s2p AM020
Contextual Info: AM020MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM020MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

Contextual Info: AM030WH4-BI-R December 2008 Rev. 0 HiFET High Voltage GaAs FET DESCRIPTION AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This

AM030MH4-BI-R

Abstract: AM030MH4-BI
Contextual Info: AM030MH4-BI-R Aug 2010 Rev 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.

AM010MH4-BI-R

Contextual Info: AM010MH4-BI-R Aug 2010 Rev 2 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.

High voltage GaAs FET

Abstract: 37758 DC bias of gaas FET
Contextual Info: AM010MH4-BI HiFET High Voltage GaAs FET January 2003 Preliminary DESCRIPTION AMCOM’s AM010MH4-BI is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total

AM030MH4-BI

Contextual Info: HiFET High Voltage GaAs FET AM030MH4-BI January 2003 Preliminary DESCRIPTION AMCOM’s AM030MH4-BI is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total

74047

Abstract: AM005MH2-BI-R
Contextual Info: HiFET High Voltage GaAs FET AM005MH2-BI-R August 2007 v.3 DESCRIPTION AMCOM’s AM005MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

Contextual Info: AM032MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM032MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total

Contextual Info: HiFET High Voltage GaAs FET AM010MH2-BI-R August 2007 v.3 DESCRIPTION AMCOM’s AM010MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a