GAAS FET SOT89 Search Results

Contextual Info: HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3 The HWL30NPA is a Medium Power GaAs FET using

70808

Abstract: 82645 56260 0117 0317 HWL26NPA 104780 107867 lS12l GaAs FET sot89 78045
Contextual Info: HWL26NPA L-Band GaAs POWER FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description

an 17830

Abstract: S3V 83 an 17830 a
Contextual Info: HEXAWAVE HWL30NPA Hexawave, Inc. L-Band Medium Power GaAs FET Description Outline Dimensions The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

Contextual Info: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1637 is a high power, high efficiency GaAs power FET that features high gain at high current w ith ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is

SHF-0189Z

Abstract: SHF0189Z
Contextual Info: SHF0189Z SHF0189Z 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0189Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

SHF-0289Z

Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
Contextual Info: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves

cq 0765

Abstract: CQ 419 MARKING E2B KGF1638 0765 cq Ta 7210 p
Contextual Info: O K I Semiconductor KGF1638 Plastic GaAs Power FET for GSM and TDMA Applications D E S C R IP T IO N The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is

SHF-0289

Abstract: SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89
Contextual Info: SHF-0289 Z SHF-0289(Z) 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)

SHF0189Z

Abstract: SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf SHF-0189 lot code RFMD H1 SOT-89
Contextual Info: SHF-0189 Z SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1633_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

qs marking sot-89

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 O K I electronic components_ KGF1631_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

KGF1633

Abstract: zo 607
Contextual Info: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 OKI electronic components_ KGF1 6 3 3 _ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

FP101-G

Abstract: f101g GaAS fet sot89 FP101 JESD22-A114 LL1608-FH MARKING CODE 51 5 fet sot-89 marking 9721
Contextual Info: FP101 The Communications Edge TM High Dynamic Range FET Product Description Functional Diagram The FP101 is a high dynamic range GaAs FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point

MARKING CODE 51 5 fet sot-89

Abstract: f101g FP101 FP101-G High Dynamic Range FET sot-89 SOT89 FET marking sot89 Marking code fp101
Contextual Info: FP101 The Communications Edge TM High Dynamic Range FET Product Description Functional Diagram The FP101 is a high dynamic range GaAs FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point

KGF1633

Abstract: GAAS FET AMPLIFIER 3400 Mhz
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0034-38-72 ¡ electronic components KGF1633 ¡ electronic components KGF1633 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

KGF1631

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 ¡ electronic components KGF1631 ¡ electronic components KGF1631 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

KGF1638

Abstract: GaAS fet sot89 112MA1 marking HD SOT89
Contextual Info: This version: Jan. 1998 Previous version: Jun. 1996 E2Q0036-27-X3 ¡ electronic components KGF1638 ¡ electronic components KGF1638 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1638, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that

80247

Contextual Info: HEXAWAVS HWL32NPA Hexawave, Inc. L-Band Power GaAs F ET Outline Dimensions Description The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz MHz cellular/wireless applications.

AS15D

Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
Contextual Info: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB

Contextual Info: AM048MX-89-R Plastic Packaged GaAs Power FET April 2010 Rev 3 DESCRIPTION AMCOM’s AM048MX-89-R is part of SOT-89 Series of GaAs MESFETs. This part has a total gate width of 4.8 mm. The AM048MX-89-R is designed for high power microwave applications, operating up to 5 GHz.

Contextual Info: HWL30NPA 1234567 7 849A7BCDEF77 Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description1 2 1 3 The HWL30NPA is a Medium Power GaAs FET using

K 1358 fet transistor

Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
Contextual Info: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。

J473

Abstract: TA 70/04 D02S KGF1637 3144 0842 K 7256 M
Contextual Info: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications D E S C R IP T IO N The KGF1637 is a high power, high efficiency G aA s pow er FET that features high gain at high current with ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is

Stanford SHF-0289

Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
Contextual Info: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added