GAAS HBT Search Results

MACH ZEHNDER driver

Abstract: "InP HBT"
Contextual Info: SDA-3000 GaAs Distributed Amplifier SDA-3000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.100mmx1.450mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET 3 InGaP HBT Si BiCMOS Si CMOS

FMS2020-001

Abstract: MIL-HDBK-263 35DBM
Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ GaAs HBT „ V2 V1 GaAs MESFET SiGe BiCMOS RF1 Si BiCMOS „ DE InGaP HBT RF2 SiGe HBT GaAs pHEMT

GaAs MESFET amplifier

Abstract: SDA-5000 SDA5000 sda 5000 SDA-5000 GaAs Distributed Amplifier RFMD microwave amplifier RFMD microwave amplifier hbt 10GHZ GAAS
Contextual Info: SDA-5000 GaAs Distributed Amplifier SDA-5000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied 3 GaAs HBT GaAs MESFET 4 OUT VG2 2 InGaP HBT IN 1 SiGe BiCMOS

RT4350

Abstract: FMS2016-005
Contextual Info: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ Optimum Technology Matching Applied ANT „ GaAs HBT GaAs MESFET DE SiGe BiCMOS

mmic distributed amplifier

Abstract: modulator driver mach zehnder mach zehnder
Contextual Info: SDA-2000 GaAs Distributed Amplifier SDA-2000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features GaAs HBT 3 InGaP HBT IN 1 9 GaAs pHEMT Si CMOS 5 7 6 VTI Si BJT ID EN TI AL :N DA Si BiCMOS

Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ Optimum Technology Matching Applied ANT „ GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS

FMS2014QFN

Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied „ „ „ ANT GaAs HBT GaAs MESFET „ InGaP HBT V2 DE V1 SiGe BiCMOS

bt 824

Abstract: BA01203
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> BA01203 Specifications are subject to change without notice._ DESCRIPTION BA01203 is GaAs RF amplifier designed for CDMA/AMPS handheld-phone. GaAs HBT HYBRID IC OUTLINE DRAWING Unit : millimeters o

cf sot-363

Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Contextual Info: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

GaAs pHEMT LOW SOT-343

Abstract: CLY 2
Contextual Info: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> Preliminary BA01202 GaAs HBT HYBRID IC Specifications are subject to change without notice. DESCRIPTION The BA01202 is GaAs RF amplifier designed for N-CDMA PCS hand-held phone. OUTLINE DRAWING Unit : millimeters o <S>

C10535E

Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Contextual Info: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES

BA01207

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> BA01207 GaAs HBT HYBRID IC Specifications are subject to change without notice. DESCRIPTION Outline Drawing The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. unit : milimeter 8 1 7 2 Low voltage Vc =3.5V

flammable

Abstract: BA01202
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> Preliminary BAO1202 GaAs HBT HYBRID IC Specifications are subject to change without notice. DESCRIPTION The BA01202 is GaAs RF amplifier designed for N-CDMA PCS hand-held phone. FEATURES Low voltage Vc=3.2V High power Po=28dBm

RFPA3806TR7

Abstract: trace code marking RFMD EEF-10
Contextual Info: RFPA3806 RFPA3806 GaAs HBT 2STAGE POWER AMPLIFIER GaAs HBT 2-STAGE POWER AMPLIFIER 700MHZ TO 2700 MHZ NC 5 NC 6 700MHz to 2700MHz Operation Applications      GaAs Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure

CGA-6618Z

Abstract: CGA6618 CGA-6618 CGA6618ZSB CGA6618ZSQ ETC1-1-13
Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

a3bz

Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

a3bz

Abstract: SXA-389BZ Sirenza amplifier SOT-89 Marking 1485C trace code marking RFMD lot code RFMD SXA389BZSQ
Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

hemt Ee

Abstract: InP HBT transistor low noise SBF-4089 SBF-4089Z RF POWER TRANSISTOR 70mhz
Contextual Info: SBF-4089 Z SBF-4089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-4089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar

macom marking

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed

CGA-6681Z

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

rf power amplifier circuit diagram with pcb layout

Abstract: UMTS2100
Contextual Info: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically

CGA6618Z

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000 MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed