GAAS MESFET AMPLIFIER Search Results

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

MACH ZEHNDER driver

Abstract: "InP HBT"
Contextual Info: SDA-3000 GaAs Distributed Amplifier SDA-3000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.100mmx1.450mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET 3 InGaP HBT Si BiCMOS Si CMOS

MGF1951A

Abstract: MGF1951A-01 MGF1951
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES

Contextual Info: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.

sot89 mmic 25

Abstract: ap201 mmic amplifier sot-89 mmic sot-89 AP-201 MESFET GaAs MMIC Gain Block sot-89
Contextual Info: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.

GaAs MESFET amplifier

Abstract: SDA-5000 SDA5000 sda 5000 SDA-5000 GaAs Distributed Amplifier RFMD microwave amplifier RFMD microwave amplifier hbt 10GHZ GAAS
Contextual Info: SDA-5000 GaAs Distributed Amplifier SDA-5000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied 3 GaAs HBT GaAs MESFET 4 OUT VG2 2 InGaP HBT IN 1 SiGe BiCMOS

Ablebond 36-2

Abstract: Multicore Solders
Contextual Info: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators

k MESFET S parameter

Abstract: MGF1953A MGF1953A-01 mesfet fet
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

k MESFET S parameter

Abstract: MGF1952A-01 MGF1952A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

MGF1954A-01

Abstract: k MESFET S parameter MGF1954A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

Contextual Info: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This amplifier is internally matched with typical VSWR of

GaAs MESFET amplifier

Abstract: MAX4473 AN1800 APP1800 bias of GaAs MESFET MESFET Application
Contextual Info: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect transistors Dec 04, 2002 APPLICATION NOTE 1800 Smart IC Maintains Uniform Bias Current For GaAs MESFETs

AG101

Contextual Info: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: AG101 power amplifier mmic
Contextual Info: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

Contextual Info: S10040220P12 S10040220P12 GaAs Push Pull Hybrid 40MHz to 1000MHz Package: SOT-115J The S10040220P12 is a Hybrid Push Pull amplifier module. The part employs GaAs pHEMT die and GaAs MESFET die, and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with

D1010

Abstract: pspice model gate driver
Contextual Info: Production Process TQHiP Power MESFET Foundry Service Features Air Bridge - 4um • • Metal 1 Metal 1 – 2 um NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel D MESFET MIM Capacitor • • • • NiCr Resistor Semi-Insulating GaAs Substrate

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT

RFCA8818

Abstract: RFMD 1500
Contextual Info: RFMD . RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier The RFMD® RFCA8818 is a low noise, linear high performance GaAs MESFET MMIC amplifier. The RFCA8818 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring

900MHZ

Abstract: IPC-SM-782 RF6100-1
Contextual Info: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS

RFAM2790

Contextual Info: RFMD. RFAM2790—Integrated EDGE QAM Amplifier The RFMD RFAM2790 is an integrated amplifier designed for CATV head-end EDGE QAM application or as a push-pull amplifier in a traditional optical node lineup. The product employs GaAs pHEMT and GaAS MESFET technologies

Contextual Info: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control

L to Ku Band Low Noise GaAs MESFET

Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY

AH101

Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
Contextual Info: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs

wj 75

Abstract: c 596 AG101 AH11 AH22 AH1-1
Contextual Info: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs