GAAS MMIC SPDT SWITCH Search Results

NJG1503

Abstract: NJG1504 NJG1506 NJG1507
Contextual Info: DISCONTINUE PRODUCTS Type No. FUNCTION DISCONTINUED TIME ALTERNATIVE PRODUCTS NJG1303 MEDIUM POWER AMPLIFIER GaAs MMIC MAY.1999 - NJG1503 SPDT SWITCH GaAs MMIC MAY.1999 NJG1506 NJG1504 SPDT SWITCH GaAs MMIC MAY.1999 NJG1507 -1-

spdt gaas 1ghz

Abstract: GaAs SPDT vSP8 NJG1505R NJG1506R NJG1508F NJG1512V
Contextual Info: SWITCH ICs SPDT SWITCH GaAs MMIC SPDT SWITCH GaAs MMIC NJG1505R/ NJG1512V NJG1506R/ NJG1508F DATA SHEET DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1505R/NJG1512V is a GaAs SPDT switch MMIC which features high isolation and low loss and ideally suitable for

spdt gaas 1ghz

Abstract: high power SPDT GaAs SPDT rf switch spdt
Contextual Info: SWITCH ICs SPDT SWITCH GaAs MMIC SPDT SWITCH GaAs MMIC NJG1516KC3/1516R NJG1517/22KB2 DATA SHEET DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1516KC3/1516R is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset.

wireless switch diagram

Abstract: antenna diversity switch NJG1509F GaAs MMIC SPDT Switch NJG1507R NJG1515AVB2 SSOP20
Contextual Info: SWITCH ICs SPDT SWITCH GaAs MMIC NJG1507R/ NJG1509F DATA SHEET DATA SHEET TDMA ANTENNA SWITCH GaAs MMIC NJG1515AVB2 DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1507R/NJG1509F is a GaAs SPDT switch IC which exhibits low loss and high isolation, and ideally suitable for T/R

ctr capacitor 0.01uf

Abstract: 27s04 CTR CAPACITOR DATASHEET high isolation SPDT isolation diodes 7S04 NJG1505R
Contextual Info: NJG1505R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1505R is a GaAs SPDT switch MMIC which features high isolation and low loss and ideally suitable for switching transmit/receiving signal of synthesizer. This switch is operated in the wide frequency range from

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

E8363

Abstract: RFSW2043DS
Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

RFSW2041D

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

E8363B

Abstract: E4446A E8257D JESD22-A114 E4446A PSA VA108 RFSW2043D
Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

NJG1519KC1

Abstract: "antenna switch" NJG1523 SP4T Antenna Switch NJG1518 cellular antenna
Contextual Info: SWITCH ICs SPDT SWITCH GaAs MMIC SP4T SWITCH GaAs MMIC NJG1518/ 23KB2 NJG1519KC1 DATA SHEET DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1518KB2/NJG1523KB2 is a GaAs SPDT switch suited for cellular phone handset. This switch features very low loss, high isolation at relatively

Contextual Info: NJG1802K51 HIGH POWER SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJG1802K51 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1802K51 features very low insertion loss, high isolation and excellent linearity

ctr capacitor 0.01uf

Abstract: CTR CAPACITOR DATASHEET 7S04 NJG1505R
Contextual Info: NJG1505R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1505R is a GaAs SPDT switch MMIC which features high isolation and low loss and ideally suitable for switching transmit/receiving signal of synthesizer. This switch is operated in the wide frequency range from

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

ctr capacitor 0.01uf

Abstract: 7S04 NJG1505R
Contextual Info: NJG1505R SPDT SWITCH GaAs MMIC n GENERAL DESCRIPTION NJG1505R is a GaAs SPDT switch MMIC which features high isolation and low loss and ideally suitable for switching transmit/receiving signal of synthesizer. This switch is operated in the wide frequency range from

E8257D

Abstract: ultrasonic probe E4446A E8363B JESD22-A114 bjt microwave 15 GHz RFSW2041D v4438
Contextual Info: DRAFT DRAFT RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

Cordless Phone system block diagram

Abstract: SSOP20 SW SPDT Cordless Phone circuit diagram FFP16-C1 NJG1309VB2 NJG1312PC1 Cordless Phone block diagram
Contextual Info: AMPLIFIERS TRANSMITTING POWER AMPLIFIER GaAs MMIC SPDT SWITCH DRIVER AMPLIFIER GaAs MMIC NJG1309VB2 NJG1312PC1 DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1309VB2 is a positive voltage supply type GaAs power amplifier MMIC designed for Digital Cordless Phone.

NEC RF Switch

Abstract: marking 6-PIN PLASTIC TSON 6 GHZ nec IEEE802.11a/b/g uPG2163T5N uPG2163T5N-E2 UPG2163
Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2163T5N GaAs MMIC SPDT SWITCH FOR 2.4 GHz AND 5 GHz DUALBAND WIRELESS LAN DESCRIPTION The uPG2163T5N is a GaAs MMIC SPDT switch for 2.4 GHz and 5 GHz dualband wireless LAN. Low insertion loss and dual band operations suit to dualband wireless LAN system.

uPG2163T5N

Abstract: UPG2163T5N-E2-A
Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2163T5N GaAs MMIC SPDT SWITCH FOR 2.4 GHz AND 5 GHz DUALBAND WIRELESS LAN DESCRIPTION The uPG2163T5N is a GaAs MMIC SPDT switch for 2.4 GHz and 5 GHz dualband wireless LAN. Low insertion loss and dual band operations suit to dualband wireless LAN system.

Contextual Info: TENTATIVE NJG1543HB3 June.27,2002 Ver.3 Under Development SPDT SWITCH GaAs MMIC QGENERAL DESCRIPTION The NJG1543HB3 is a GaAs SPDT switch MMIC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of

Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

RFSW2043D

Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

njg1681

Abstract: NJG1681MD7
Contextual Info: NJG1681MD7 HIGH POWER SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at

Contextual Info: NJG1681MD7 HIGH POWER SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at