GAAS SPDT IC FET Search Results

SK39110

Abstract: LPCC16 msl1
Contextual Info: DATA SHEET AS196-307, AS196-307LF: GaAs IC High-Isolation SPDT Nonreflective Switch with Driver DC–6 GHz GND GND N/C GND 14 15 16 1 VCC 11 2 VCTL GND 10 3 50 The AS196-307 is a GaAs FET IC SPDT nonreflective switch packaged in a 16-lead exposed pad plastic package for low-cost,

Contextual Info: PRELIMINARY DATA SHEET SKY13278-313LF: GaAs SPDT Switch 100 MHz–2.5 GHz Features ● ● ● ● ● Description The SKY13278-313LF is a pHEMT GaAs FET IC high linearity SPDT switch. This wideband switch has been designed for use from 100 MHz to 2.5 GHz, where extremely high linearity, low control

Contextual Info: DATA SHEET AS338-12, AS338-12LF: GaAs IC SPDT Nonreflective Switch 300 kHz–2.5 GHz Features Pin Out VS CBL 6 3 V1 J2 CBL CBP GND CBP The AS338-12 is a low-cost IC FET SPDT nonreflective switch in a plastic SOIC-8 package for commercial applications. The switch

Contextual Info: DATA SHEET AS338-12, AS338-12LF: GaAs IC SPDT Nonreflective Switch 300 kHz–2.5 GHz Features Pin Out 7 50 CBL 6 3 V1 CBP GND CBP The AS338-12 is a low-cost IC FET SPDT nonreflective switch in a plastic SOIC-8 package for commercial applications. The switch

AS338-12

Abstract: AS338-12LF AS338
Contextual Info: DATA SHEET AS338-12, AS338-12LF: GaAs IC SPDT Nonreflective Switch 300 kHz–2.5 GHz Features Pin Out VS 7 50 CBL 6 3 V1 CBP GND CBP The AS338-12 is a low-cost IC FET SPDT nonreflective switch in a plastic SOIC-8 package for commercial applications. The switch

AS118-12

Contextual Info: GaAs IC High Isolation Positive Control SPDT Switch DC–2.5 GHz AS118-12 Features SOIC-8 • Positive Control PIN 8 0.050 1.27 mm BSC ■ High Isolation (45 dB @ 0.9 GHz) ■ Low Insertion Loss (0.5 dB @ 0.9 GHz) Description The AS118-12 is a reflective SPDT FET IC switch. The

AS118-12

Contextual Info: GaAs IC High Isolation Positive Control SPDT Switch DC–2.5 GHz AS118-12 Features SOIC-8 • Positive Control PIN 8 0.050 1.27 mm BSC ■ High Isolation (45 dB @ 0.9 GHz) ■ Low Insertion Loss (0.5 dB @ 0.9 GHz) Description The AS118-12 is a reflective SPDT FET IC switch. The

10PIN

Abstract: CXG1077TN
Contextual Info: CXG1077TN High Power SPDT Switch Description The CXG1077TN is a SPDT Single Pole Dual Throw antenna switch MMIC used in personal communication handsets such as JCDMA. This IC is designed using the Sony’s GaAs J-FET process. Features • Low control voltage

Contextual Info: GaAs MMIC SPDT FET Switch in EQA lpha 8 Lead SOIC Non-Reflective DC-2.5 GHz AS002M2-12 Features Low DC Power Consumption Non-Reflective Surface Mount 8 Lead S O IC Package Description The A S 0 0 2 M 2 -1 2 is a low cost M M IC SPDT non-reflective switch in a plastic S O IC package for

Contextual Info: DATA SHEET AS338-12, AS338-12LF: GaAs IC SPDT Switch Non-Reflective 300 kHz–2.5 GHz Features Pin Out VS CBL 50 7 2 J1 CBL 6 GND J3 5 NEW CBP CBP 4 The AS338-12 is a low cost IC FET SPDT non-reflective switch in a plastic SOIC-8 package for commercial applications. The switch

Contextual Info: DATA SHEET AS230-348, AS230-348LF: GaAs SPDT IC 7 W T/R Switch DC–6 GHz The AS230-348 is an IC FET SPDT switch in a low-cost plastic package. It features extremely high linearity, low insertion loss, with very low DC power consumption. Some standard implementations include antenna changeover, T/R and diversity switching

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS338-12 is a low cost IC FET SPDT non-reflective

348LF

Contextual Info: DATA SHEET AS230-348, AS230-348LF: GaAs SPDT IC 7 W T/R Switch DC–6 GHz The AS230-348 is an IC FET SPDT switch in a low-cost plastic package. It features extremely high linearity, low insertion loss, with very low DC power consumption. Some standard implementations include antenna changeover, T/R and diversity switching

Contextual Info: DATA SHEET AS002R2-12, AS002R2-12LF: GaAs IC SPDT Low-Loss Reflective Switch 300 kHz–2.5 GHz Pin Out Features VS 10k CBP CBL GND 7 3 6 GND CBP J3 CBL CBL Description 5 V2 4 The AS002R2-12 is a low-loss IC FET SPDT reflective generalpurpose switch in a plastic SOIC-8 package for commercial

Contextual Info: DATA SHEET AS002R2-12, AS002R2-12LF: GaAs IC SPDT Low-Loss Reflective Switch 300 kHz–2.5 GHz Features Pin Out VS 10k CBP CBL GND 7 3 6 GND CBP J3 CBL CBL Description 5 V2 4 The AS002R2-12 is a low-loss IC FET SPDT reflective generalpurpose switch in a plastic SOIC-8 package for commercial

AS338-12

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS338-12 is a low cost IC FET SPDT non-reflective

Contextual Info: CXG1009TN High Isolation SPDT Switch Description The CXG1009TN is a high Isolation SPDT Single Pole Dual Throw switch MMIC for personal communication, cable TV and so on. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive control

10PIN

Abstract: CXG1077TN
Contextual Info: CXG1077TN High Power SPDT Switch Description The CXG1077TN is a SPDT Single Pole Dual Throw antenna switch MMIC used in personal communication handsets such as JCDMA. This IC is designed using the Sony’s GaAs J-FET process. Features • Low control voltage Vctl (H) =2.8 V

sony tv diagram

Abstract: sony tv circuit diagram 10PIN CXG1009TN diagram tv sony GaAs IC High Isolation Positive Control Switch
Contextual Info: CXG1009TN High Isolation SPDT Switch Description The CXG1009TN is a high Isolation SPDT Single Pole Dual Throw switch MMIC for personal communication, cable TV and so on. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive control

diagram tv sony

Abstract: 10PIN CXG1009TN sony tv diagram JEDEC TSSOP 28 LEAD PACKAGE
Contextual Info: CXG1009TN High Isolation SPDT Switch Description The CXG1009TN is a high Isolation SPDT Single Pole Dual Throw switch MMIC for personal communication, cable TV and so on. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive control

10PIN

Abstract: CXG1039TN tssop10 CXG10
Contextual Info: CXG1039TN High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic Description The CXG1039TN is a high isolation absorptive SPDT Single Pole Dual Throw switch MMIC used in PCS handsets. This IC is designed using the Sony’s GaAs J-FET process and operates with CMOS input.

Contextual Info: DATA SHEET AS002R2-12, AS002R2-12LF: GaAs IC SPDT Low-Loss Reflective Switch 300 kHz–2.5 GHz Features Pin Out VS 10k CBP CBL GND 7 3 6 GND CBP J3 CBL CBL Description 5 V2 4 The AS002R2-12 is a low-loss IC FET SPDT reflective generalpurpose switch in a plastic SOIC-8 package for commercial

AS338-12

Abstract: 50/AS338-12
Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–2.5 GHz AS338-12 Features SOIC-8 • Low DC Power Consumption PIN 8 0.050 1.27 mm BSC ■ High Isolation (40 dB @ 0.9 GHz) ■ Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 INDICATOR Description The AS338-12 is a low cost IC FET SPDT non-reflective

sony tv circuit diagram

Abstract: sony TV IF IC
Contextual Info: SONY High Isolation SPDT Switch Description The CXG1009TN is a high Isolation SPDT Single Pole Dual Throw switch MMIC for personal communication, cable TV and so on. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive control