GAL 700 Search Results

Contextual Info: PH F I E L D & LA B E L E C T R O D E S Pre-Mixed pH Calibration Solutions PHA-4-GAL PHA-7-GAL PHA-10-GAL PHA Series $ 5 MADE IN USA Basic Unit ߜ Pre-Mixed pH Solutions ߜ Two Bottle Sizes Available ߜ Standardized Against NIST Certified Sample Formulated to provide precise pH

Contextual Info: Reference Tables F LO W E Q U IV A L E N T S 1 Cu. FtVHr. 0.0166 0.4719 28.316 471.947 28317 0.1247 7.481 1 C u. Ft./Min. Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min. Gal/Hr. 60 28.316 1699 28317 1,699,011 7.481 448.831 Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min.

Contextual Info: Reference Tables FLOW EQUIVALENTS 1 Cu. Ft./Hr. 0.0166 0.4719 28.316 471.947 28317 0.1247 7.481 1 Cu. Ft./Min. 60 28.316 1699 28317 1,699,011 7.481 448.831 Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min. Gal/Hr. 1 LPM 60 0.035 2.1189 1000 60,002 0.264 15.851 Cu. Ft./Min

GAL -700 -4

Abstract: GAL 700 37792 27-8210 gal 900
Contextual Info: Reference Tables FLOW EQUIVALENTS 1 Cu. Ft./Hr. 0.0166 0.4719 28.316 471.947 28317 0.1247 7.481 1 Cu. Ft./Min. 60 28.316 1699 28317 1,699,011 7.481 448.831 Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min. Gal/Hr. 1 LPM 60 0.035 2.1189 1000 60,002 0.264 15.851 Cu. Ft./Min

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

gal programming algorithm

Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE

pt 2358

Abstract: gal programming algorithm PALCE29MA16 PALCE29MA16H-25 PD3024 IOE14
Contextual Info: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic

QAL22V10-30L

Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
Contextual Info: GAL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating

GAL Gate Array Logic

Abstract: gal22v10 application note gal22v10 application gal22v10
Contextual Info: GAL22V10 EH National m M Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

Contextual Info: RIFA INC 7D 7752272 RIFA INC DE | 7 7 5 E E ? 2 DODO53D D | 70C 002 30 b ’~7^’"5T/~ £ 5 ^ PGC7000 B2.11 Integrated Circuits ’ k r t- GaAs Low Noise FET Description: The PGC 7000 is a general purpose GaAs gal­ lium arsenide MESFET (MEtal Semiconductor

LATTICE plsi 3000 SERIES cpld

Abstract: LATTICE plsi architecture 3000 SERIES speed 16v8 programming Guide LATTICE 3000 SERIES speed performance 16V8 2032E 2128E GAL22V10 x628 GAL20ra10
Contextual Info: Product Selector Guide A Universe of ISP Solutions A Universe of ISP Solutions Introduction E2CMOS GAL® Lattice invented programmable logic devices in the mid-80’s, leading the industry revolution from bipolar PALs to CMOS PLDs. In 1992, Lattice introduced the

Semikron skiip 209

Abstract: 742 IC nf 742
Contextual Info: SKiiP 742 GAL 120 - 209 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

datasheet gal 120 05 td

Abstract: semikron IGBT 400A 600v
Contextual Info: SKM 600 GAL 126 DT . Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICM VGES Tj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IF = –IC Tcase = 25 (80) °C

t3d 57

Abstract: T3D 88 t3d diode T3D 89 Diode T3D 57 GC5510 gc5514g paramp T3D 45 diode GC5511A
Contextual Info: LO RA L niCROülAVE-FSI SIE D • 5 5 0 0 1 3 0 G O O G M ? ! T3D ■ GaAs PARAMETRIC AM PLIFIER VARACTORS DESCRIPTION FEATURES The GC5510 series paramp varactors are diffused junction gal­ lium arsenide devices featuring the lowest series resistance and

Contextual Info: se MIKROn vVjsol 4 AC, 1min Operating / stor. tem perature o /) o —I Conditions1’ S’ Symbol —I SKiiP 742 GAL 120 - 209 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °c 1200 V V A IGBT and FW D Diode VcES Operating DC link voltage

DIODE S4 65

Abstract: gal 900 DIODE S4 38
Contextual Info: SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

ep330

Abstract: vhdl code for 4 bit counter vhdl code for sr flipflop EP610 ORDERING EPLD 900
Contextual Info: Classic Programmable Logic Device Family Data Sheet August 1993, ver. 1 □ Features □ □ □ □ □ □ □ □ □ Complete EPLD fam ily with logic densities up to 1,800 available gates 900 usable gates . See Table 1. M ultiple 20-pin PAL and GAL replacem ent and integration

GAL-33

Abstract: GAL-5 wt 7905 GAL-51 7905 sot89 DF782 GAL-21 16651 7812 SOT GAL-6
Contextual Info: Surface Mount W! NE Monolithic Amplifiers 50Ω, Broadband DC to 8 GHz GAL-SERIES Features • • • • • • InGaP HBT microwave amplifiers miniature SOT-89 package frequency range, DC to 8 GHz, usable to 10 GHz up to 18.2 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

5252 F 1117

Abstract: GAL-33 GAL-2 14055 GAL-5 7905 sot89
Contextual Info: NE W! Surface Mount Monolithic Amplifiers 50Ω, Broadband DC to 8 GHz GAL-SERIES Features • • • • • • InGaP HBT microwave amplifiers miniature SOT-89 package frequency range, DC to 8 GHz, usable to 10 GHz up to 18.2 dBm typ. output power excellent package for heat dissipation, exposed metal bottom

teradyne z1890

Abstract: Sis 968 29MA16 BGA and QFP Package gal amd 22v10 MACH4A pLSI 1016 mach 1 family amd 22v10 pal AMD BGA
Contextual Info: L A T T I C E S E M I C O N D U C T Programmable Logic Devices Copyright 2000 Lattice Semiconductor Corporation. Lattice Semiconductor Corporation 5555 Northeast Moore Court Hillsboro, Oregon 97124 U.S.A. Lattice Semiconductor, L stylized Lattice Semiconductor Corp., and Lattice (design), E2CMOS, GAL, Generic Array Logic, ISP,

BSM150GB100D

Abstract: bsm 256
Contextual Info: SIEMENS BSM150GB100D BSM 150 GAL 100 D IGBT Module P re lim in a ry D a ta VCE = 1000 V / c = 2 x 2 0 0 A at Tc = 25 C l c = 2 x 1 5 0 A at fc = 80 C • Power module • Half-bridge/Chopper • Including fast free-wheel diodes • Package with insulated metal base plate

IGBT Module BSM150GB120D

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Contextual Info: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule

bsm 256

Abstract: siemens igbt BSM 150 gb 100 d C67076-A2102-A2 BSM 15 GB bsm siemens VM105270
Contextual Info: L.GE D • Ö235b05 DDMSÖÖfl 413 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF IGBT Module Preliminary Data BSM 150 GB 100 D BSM 150 GAL 100 D VCE - 1000 V I c = 2 x 2 0 0 A at T c = 25 C / c = 2 X 150 A at Tc = 8 0 C • • • • • Power m odule H alf-bridge/Chopper

scr control circuit for welding

Abstract: scr welding LDX3185 LDX31870 247E03 LDX318
Contextual Info: LDX31870 TM POW-R-BLOK Water Cooled Dual SCR Isolated Module 700 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 OUTLINE DRAWING Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated