GAN MATCHING 100 WATT Search Results

EAR99

Abstract: GaN 100 watt GaN TRANSISTOR GaN matching 100 watt RF3934 Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932
Contextual Info: RFMD . 120 Watt GaN Wideband Power Amplifier The RF3934, the newest of RFMD’s series of unmatched power transistors, is a 48 volt, 120-watt high power discrete amplifier designed for commercial wireless infrastructure, military, industrial/ scientific/medical, and general purpose broadband amplifier

GaN 100 watt

Contextual Info: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

GaN 100 watt

Abstract: TGF2023-20 GaN matching 100 watt
Contextual Info: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

TQP200001

Contextual Info: RFCM3050 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm RFCM3050 Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all

Contextual Info: RFCM3080 40-1003MHZ GAAS/GAN PUSH PULL MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm RFCM3080 Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all

tgf2023-2-05

Contextual Info: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE

MC8087-2/GaN 100 watt

Contextual Info: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 56% Maximum PAE

GaN 100 watt

Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz

tgf2023-2-10

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz

GaN 100 watt

Contextual Info: TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 47 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

Contextual Info: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical

Contextual Info: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE

GaN matching 100 watt

Abstract: TGF2023-10
Contextual Info: TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 47 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

Contextual Info: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

Contextual Info: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

tgf2023-2-20

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

Contextual Info: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE

GaN matching 100 watt

Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical

Contextual Info: HMC1086 v04.0714 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm

Contextual Info: HMC1086 v03.0414 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm

Contextual Info: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz