GAN PA Search Results

GAN PA Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

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Digi International Inc DG-ANT-50DP-AG Antennas Ant RP-SMA 2.4/5GHz Dipole w/5dBi gain
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	DG-ANT-50DP-AG		20			1 $49.61 10 $49.61 100 $49.61 1000 $49.61 10000 $49.61	Buy Now
Infineon Technologies AG EVALHBPARALLELGANTOBO1 Power Management IC Development Tools EVAL_HB_PARALLELGAN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	EVALHBPARALLELGANTOBO1		2			1 $138.14 10 $138.14 100 $138.14 1000 $138.14 10000 $138.14	Buy Now

GAN PA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
L-934MBC Abstract: L-934MBD L-934MBT LED Kingbright L934MBD kingBright t-1 LED L934MBC L- 934MBC L934MBT Text: T-1 3mm BLUE LED Kingbright L-934MBD GaN L-934MBT GaN L-934MBC GaN Package Dimensions Features lLOW POWER CONSUMPTION. lSOLID STATE BLUE LIGHT SOURCE. lSUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. Description The blue source color devices are made with GaN on SiC	Original	PDF	L-934MBD L-934MBT L-934MBC 2-L934MB-2 L-934MBC 2-L934MB-3 LED Kingbright L934MBD kingBright t-1 LED L934MBC L- 934MBC L934MBT
5BWC Abstract: No abstract text available Text: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP	Original	PDF
Untitled Abstract: No abstract text available Text: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP	Original	PDF
NPTB0004 Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015 Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	PDF	AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
L-53MBC Abstract: blue led 5mm L-53MBD blue led L-53MBT kingBright t-1 LED 5mm Blue Led 2-L53MB-3 Kingbright LED 5mm blue Text: T-1 3/4 5mm BLUE LED Kingbright L-53MBD GaN L-53MBT GaN L-53MBC GaN Package Dimensions Features lLOW POWER CONSUMPTION. STATE BLUE LIGHT SOURCE. lSUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. lSOLID Description The Blue source color devices are made with GaN on SiC	Original	PDF	L-53MBD L-53MBT L-53MBC 2-L53MB-2 L-53MBC 2-L53MB-3 blue led 5mm blue led kingBright t-1 LED 5mm Blue Led 2-L53MB-3 Kingbright LED 5mm blue
blue LED 5mm low Abstract: L-53MBD 5mm Blue Led blue led blue led 5mm blue led 5mm 20ma LED blue 20mA L-53MBC L-53MBT L53MBD Text: T-1 3/4 5mm BLUE LED Kingbright L-53MBD GaN L-53MBT GaN L-53MBC GaN Package Features Dimensions LOW POWER CONSUMPTION. SOLID STATE BLUE LIGHT SOURCE. SUITABLE FOR FULL COLOR LED DSIPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT. Description The Blue source color devices are made with GaN on SiC	Original	PDF	L-53MBD L-53MBT L-53MBC L-53MBC blue LED 5mm low 5mm Blue Led blue led blue led 5mm blue led 5mm 20ma LED blue 20mA L53MBD
28F0181-1SR-10 Abstract: CAPACITOR 150 RED Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED
LF81 Abstract: No abstract text available Text: Kingbright FULL COLOR LED LAMPS LF59 LF819 Part No. Emitting Color + Material Wavelength nm Iv (mcd) @20mA Lens Type Viewing Angle Min. Typ. 90 150 12 30 50 100 GaAsP/GaP 625 GaN 430 GaP 565 GaN 430 12 30 GaAsP/GaP 625 20 70 GaN 430 3 8 GaP 565 10 50 GaN	Original	PDF	LF819 LF59EMBGMBC LF59EMBGMBW LF819EMBGMBC LF81
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	PDF	RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt
GaN amplifier Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2	Original	PDF	AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
X-band Gan Hemt Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2	Original	PDF	AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Untitled Abstract: No abstract text available Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928 RF3928280W DS120508
Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 RFHA1025 96GHz 215GHz DS120613
ATC100B620 Abstract: L22 amplifier Gan hemt transistor RFMD Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD

Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 RFHA1025 96GHz 215GHz DS120928
Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 96GHz 215GHz DS120613
RF3928B Abstract: power transistor gan s-band RF392 Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B RF3928B DS111208 power transistor gan s-band RF392
GaN amplifier temperature compensation Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009 Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents	Original	PDF	AN-009 AN-009: NPT25100 GaN amplifier temperature compensation GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt AN009
Untitled Abstract: No abstract text available Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B DS120503
Untitled Abstract: No abstract text available Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B RF3928B DS120503
GaN hemt Abstract: power transistor gan s-band air surveillance system diagram using radar Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar
atc100a150 Abstract: power transistor gan s-band Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band
Untitled Abstract: No abstract text available Text: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology	Original	PDF	RFHA3944 RF360-2 800MHz 2500MHz -40dBc DS120418
Untitled Abstract: No abstract text available Text: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology	Original	PDF	RFHA3942 RF360-2 800MHz 2500MHz -40dBc DS120418

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GAN PA Search Results

GAN PA Result Highlights (5)

GAN PA Price and Stock

Digi International Inc DG-ANT-50DP-AG

Infineon Technologies AG EVALHBPARALLELGANTOBO1

GAN PA Datasheets Context Search

L-934MBC

5BWC

Untitled

NPTB0004

L-53MBC

blue LED 5mm low

28F0181-1SR-10

LF81

GaN ADS

GaN amplifier

X-band Gan Hemt

Untitled

Untitled

ATC100B620

Untitled

Untitled

RF3928B

GaN amplifier temperature compensation

Untitled

Untitled

GaN hemt

atc100a150

Untitled

Untitled