GAP PHOTODIODE PIN Search Results

silicon photodiode array

Contextual Info: PHOTONIC Silicon Photodiode Array, Near I.R. Photoconductive 8 element Type PDI-C208-F DETECTORS INC. PACKAGE DIMENSIONS INCH mm .600 [15.24] CL CL .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA)

PDI-V208-F

Abstract: photodiode array chip IR photodiode array
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Near I.R. Photovoltaic 8 element Type PDI-V208-F PACKAGE DIMENSIONS INCH mm .600 [15.24] CL CL .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA)

photodiode array chip

Abstract: 9 ELEMENT photoDIODE ARRAY PDB-C208 silicon linear photodiode array c208 Photodiode Array linear Photodiode Array linear array photodiode element
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 8 element Type PDB-C208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5

silicon linear photodiode array

Abstract: PDB-V208 Photonic Detectors
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 8 element Type PDB-V208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5 CL

PDB-V208

Abstract: linear array photodiode element
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 8 element Type PDB-V208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5 CL

Contextual Info: Photodiode-Chip EPC-440-2.5 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 2460 2400 2200 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet

Contextual Info: Photodiode-Chip EPC-440-1.4 19.11.2007 rev. 06 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 1360 1300 1100 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet

DIL18

Abstract: diode AA16 DIL-18 AD-LA-16-9-DIL 18 AA16-9DIL18 1100 RESISTOR ARRAY
Contextual Info: AA16-9 DIL18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760-910 nm high speed, low noise good uniformity between elements low cross talk AA16-9 DIL18 no. of Elements Active Area / Element [µm] Gap / Separation

Contextual Info: Photodiode-Chip EPC-440-0.9 19.11.2007 rev. 06 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up typ. dimensions (µm) 860 800 720 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet

Contextual Info: Photodiode-Chip EPC-440-3.6 19.11.2007 rev. 05 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P anode up 3560 typ. dimensions (µm) 3500 3300 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet

Photodiode-Array 32-element

Abstract: Photodiode Array 32 element 16 Photodiode-Array PDB-C232 photodiode linear array
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 32 Element Type PDB-C232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12

Contextual Info: EPD-525-0-2.5 rev 1.1 02.04.2015 Description EPD-525-0-2.5 is a selective photodiode based on GaP with an active area of 5.8 mm², mounted in hermetically sealed TO-39 package with isolated pins. The PD is specified with a sensitivity range of 410 – 580 nm, and a peak at 525 nm.

silicon photodiode array

Abstract: Photodiode Array 32 element blue enhanced photodiode array 16 Photodiode-Array PDB-V232
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photovoltaic 32 Element Type PDB-V232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13

Contextual Info: Silicon Photodiode Array, Photoconductive 32 Element Type PDB-C232 PACKAGE DIMENSIONS INCH [mm] CL CL .005 [0.13] GAP TYP +.005 [0.13] -.002 [0.05] 1.700 [43.18] .040 [1.02] 18 34 .700 [17.78] 1 ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 0.050 [1.27]

Analog Photodiode 1550nm

Abstract: PIN Photodiode 1550nm PIN Photodiode 1550nm Photodiode 1550nm bandwidth 1550nm photodiode 2 Ghz pin Photodiode 2 GHz Analog Photodiode, 1550nm, FID3S2KX
Contextual Info: Analog PIN Photodiode FID3S2KX FEATURES • • • • • • PIN photodiode for CATV/Analog applications High Responsivity Wide Bandwidth Low Modulation Distortion High Optical Return Loss: >40dB High Frequency Response: >2.5GHz APPLICATIONS • Analog Transmission Systems

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

SLOTTED OPTICAL SWITCH

Abstract: Infrared photodiode sensor PIN Photodiode car Speed Sensor IR photodiode tic 260 OPB621
Contextual Info: Product Bulletin OPB621 November 2000 Slotted Optical Switch Type OPB621 Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • PIN photodiode sensor for high speed • Non-contact switching • Printed circuit board mounting • 0.320”(8.13 mm) lead centers

OP999

Abstract: IR photodiode sensor
Contextual Info: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )

OPB610

Abstract: LED 020 ir sensor OPB620 SLOTTED OPTICAL SENSOR OP999 datasheet opb620 Infrared photodiode sensor OPTEK slotted SLOTTED OPTICAL SWITCH OP240
Contextual Info: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )

Transmissive Optical Sensor 3 pin

Abstract: OPB61 OPB610
Contextual Info: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )

OPB610

Abstract: SLOTTED OPTICAL SENSOR SLOTTED OPTICAL SWITCH OP999 OPB620 OPB611 datasheet opb620 OPTEK slotted photodiode and phototransistor OP240
Contextual Info: Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: • • • • • • Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed OPB611, OPB621 Lead centers: 0.275” (OPB61_ ) / 0.320” (OPB62_ )

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

quadrant photodiode

Abstract: photodiode array encoder photodiode encoder KMPD1054E01 S8594 SE-171 spot light size photodiode PIN photodiode chip GaP photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm

GaP photodiode

Abstract: quadrant photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S8594 Quadrant photodiode with slit mask for encoder S8594 is a quadrant photodiode array with a slit mask code strip formed on the Si chip surface. Features Applications l Quadrant photodiode with slit mask of L/S (Line/Space)=10/10 µm