Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GATE FIRING Search Results

    GATE FIRING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    GATE FIRING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Figure 1: BAP1551 IGBT Gate Driver Board Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB)


    Original     		PDF BAP1551 LM-35

    single phase half bridge inverter

    Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control


    Original     		PDF BAP1551 LM-35 single phase half bridge inverter IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note

    IGBT gate drive board

    Abstract: No abstract text available
    Text: APPLIED POWER SYSTEMS, INC. BAP1491 IGBT Gate Drive Board BAP1491 IGBT Gate Drive Board for Three Phase and Full Bridge Inverters Complete IGBT Gate Drive Board with the following feature:      Current sensing and heatsink temperature sensing capability


    Original     		PDF BAP1491 AP-1491 IGBT gate drive board

    single phase igbt based inverter 200 amps circuit

    Abstract: IGBT gate drive board single phase igbt based inverter 200 amps circuit board single phase IGBT based PWM inverters IGBT Gate Drive ap-1491 inverter igbt circuit diagrams in bridge LM35 application circuits 5045-04A BAP1491
    Text: APPLIED POWER SYSTEMS, INC. BAP1491 IGBT Gate Drive Board BAP1491 IGBT Gate Drive Board for Three Phase and Full Bridge Inverters Complete IGBT Gate Drive Board with the following feature: ™ ™ ™ ™ ™ Current sensing and heatsink temperature sensing capability


    Original     		PDF BAP1491 AP-1491 single phase igbt based inverter 200 amps circuit IGBT gate drive board single phase igbt based inverter 200 amps circuit board single phase IGBT based PWM inverters IGBT Gate Drive inverter igbt circuit diagrams in bridge LM35 application circuits 5045-04A

    basic thyristor firing circuit

    Abstract: AN4840 general purpose triggering circuit thyristor firing METHODS DCR1596SW AN4840-3
    Text: AN4840 Application Note TGD-1X AN4840 Gate Triggering And Gate Characteristics Application Note Replaces September 2000 version, AN4840-3.0 AN4840-3.1 July 2002 In all thyristor datasheets a set of curves showing device gate characteristics is given. This gives information fundamental to


    Original     		PDF AN4840 AN4840 AN4840-3 DCR1596SW basic thyristor firing circuit general purpose triggering circuit thyristor firing METHODS DCR1596SW

    thyristor firing circuit

    Abstract: thyristor firing circuits 440v ac to 24v dc 3 amp how to control firing angle in thyristor 6 thyristor firing circuit HRC Fuse BASE United Automation X10213 trigger module circuit-breakers firing circuit
    Text: 1,2 & 3 PHASE BURST FIRING TRIGGER MODULE BM1/2/3 X10219 INTRODUCTION This burst fire control module incorporates the unique MONO-LINK - Gate to Gate firing feature which uses single path hard firing for each phase thyristor pair, eliminating cathode firing connections. The zero crossing


    Original     		PDF X10219 AP02/4 BS7671) thyristor firing circuit thyristor firing circuits 440v ac to 24v dc 3 amp how to control firing angle in thyristor 6 thyristor firing circuit HRC Fuse BASE United Automation X10213 trigger module circuit-breakers firing circuit

    thyristor firing circuit

    Abstract: Betatherm 10K3A1 10K3A1 fast acting circuit breakers mcb gate firing thyristor firing circuits BS7671 X10213 X10229 X10255
    Text: 3 PHASE BURST FIRING 0-40°°C / 0-150°°C TEMPERATURE CONTROLLER BMT-3A X10298 INTRODUCTION This microprocessor based dual range temperature control module incorporates the unique MONO-LINK - Gate to Gate firing feature which uses single path hard firing for each phase


    Original     		PDF X10298 AP02/4 BS7671) 10K3A1 thyristor firing circuit Betatherm 10K3A1 fast acting circuit breakers mcb gate firing thyristor firing circuits BS7671 X10213 X10229 X10255

    thyristor firing circuit

    Abstract: 440v ac to 24v dc 3 amp BS7671 X10213 X10229 X10255 440v ac to 24v dc manual thyristor trigger module
    Text: UNIVERSAL BURST FIRE TRIGGER MODULE BM1/2/3 X10219 INTRODUCTION This burst fire control module incorporates the unique MONO-LINK , Gate to Gate, firing feature, which uses single path hard firing for each phase thyristor pair, eliminating cathode firing connections. The zero crossing triggered output has a variable


    Original     		PDF X10219 thyristor firing circuit 440v ac to 24v dc 3 amp BS7671 X10213 X10229 X10255 440v ac to 24v dc manual thyristor trigger module

    2N6071B

    Abstract: 2N6073A 2N6071A Series 2N607 2N6071A 2N6071BG 2N6071BT 2N6073B 2N6075A 2N6075B
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are


    Original     		PDF 2N6071A/B 2N6071/D 2N6071B 2N6073A 2N6071A Series 2N607 2N6071A 2N6071BG 2N6071BT 2N6073B 2N6075A 2N6075B

    to225

    Abstract: No abstract text available
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are


    Original     		PDF 2N6071A/B 2N6071A 2N6073A 2N6075A 2N6071A, 2N6071B O-225 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 to225

    BAP1289

    Abstract: 3 phase bridge scr drive circuit diagram
    Text: APPLIED POWER SYSTEMS, INC. BAP1289 HV SCR Gate Driver Board System BAP1289 HIGH VOLTAGE ISOLATED SCR GATE DRIVER The BAP1289 provides a complete, reliable, turnkey solution to control single or multiple High Voltage SCR devices. High current FET amplifiers drive individual


    Original     		PDF BAP1289 3 phase bridge scr drive circuit diagram

    triac 2n6075bg

    Abstract: 2N6075BG
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full‐wave silicon gate controlled solid‐state devices are


    Original     		PDF 2N6071A/B 2N6071A, 2N6073A, 2N607ht 2N6071/D triac 2n6075bg 2N6075BG

    2n6071a

    Abstract: 2n6075a triac firing circuit TRIAC 2N6071 A to225a 2N6075
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are


    Original     		PDF 2N6071A/B 2N6071A 2N6073A 2N6075A triac firing circuit TRIAC 2N6071 A to225a 2N6075

    2N6073AG

    Abstract: 2N6075AG 2N6075BG 2N6071AG 2N6073BG to225 2N6071A 2N6071B 2N6073A 2N6073B
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are


    Original     		PDF 2N6071A/B 2N6071A, 2N6073A 2N6071/D 2N6073AG 2N6075AG 2N6075BG 2N6071AG 2N6073BG to225 2N6071A 2N6071B 2N6073B

    2N6075AG

    Abstract: 2N6073AG 2N6073BG 2N6075BG 2N6071AG 2N6071A triac 2n6073ag to225 2N6071B 2N6073A
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full‐wave silicon gate controlled solid‐state devices are


    Original     		PDF 2N6071A/B 2N6071A, 2N6073A, 2N6075A, 2N6071/D 2N6075AG 2N6073AG 2N6073BG 2N6075BG 2N6071AG 2N6071A triac 2n6073ag to225 2N6071B 2N6073A

    2N6071A

    Abstract: 2N6071B 2N6073A 2N6073B 2N6075A 2N6075B MC7400
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are


    Original     		PDF 2N6071A/B 2N6071A 2N6073A 2N6075A r14525 2N6071/D 2N6071B 2N6073B 2N6075B MC7400

    diode c449

    Abstract: C395B diode c445 C394 C394A C395 C395A C445A C449 CC94P
    Text: IN V E R T E R SCR's 700 TO 1000 AMPERES GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION • , C394 C395 C444/C445 C447/C448 C449 AMPLIFYING GATE AMPLIFYING GATE AMPLIFYING GATE AMPLIFYING GATE AMPLIFYING GATE 100-600 100-600


    OCR Scan     		PDF C444/C445 C447/C448 SF1154, G322L diode c449 C395B diode c445 C394 C394A C395 C395A C445A C449 CC94P

    C384 SCR

    Abstract: C185 c180 scr high impedance rf voltmeter circuit diagrams C185B C185n C184 R C185G C186 C364A
    Text: I N V E R T E R SCR's 110.1 280 275 TO 400 AM PERES | GETYPE CONSTRUCTION C 1 8 4 /C 1 8 5 C 186 C 364 C 36 5 C 38 4 /C 3 8 5 C 386 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G


    OCR Scan     		PDF C184/C185 C384/C385 C384 SCR C185 c180 scr high impedance rf voltmeter circuit diagrams C185B C185n C184 R C185G C186 C364A

    GE C712 thyristor

    Abstract: GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612
    Text: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE


    OCR Scan     		PDF 488BHIIMIÃ GE C712 thyristor GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612

    nte5455

    Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
    Text: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan     		PDF b431SSci NTE5480 NTE5400 NTE5411 NTE5452 NTE5453 NTE5470 NTE5442 NTE5481 NTE5461 nte5455 nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629

    NTE5405

    Abstract: GT 32 DIAC
    Text: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate


    OCR Scan     		PDF NTE5480 NTE5411 NTE5400 NTE5452 NTE5453 NTE5442 NTE5470 NTE5401 NTE5402 NTE5413 NTE5405 GT 32 DIAC

    alcoa electrical joint compound

    Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
    Text: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S


    OCR Scan     		PDF 488BHIIMIÃ SF1154 SF1154, G322L LS2037 G322L, alcoa electrical joint compound C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T

    TSS2J2A44S

    Abstract: TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S
    Text: 3. RATINGS & METHOD OF USE 3.1 T hyristors 3.1.1 G ate triggering characteristics. Supplying a gate c u rre n t to such th y risto rs as SCRs, TRIA C s, e tc ., sw itches them from the o ff-state to th e on-state. T h y risto r gate characteristics include gate


    OCR Scan     		PDF 125x125x2m TSS2J2A44S TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S

    10K3A1

    Abstract: Betatherm 10K3A1
    Text: 1 V U N ITE D A U T O M A T IO N L T D y 3 PHASE BURST FIRING 0-40°C / 0-150°C TEMPERATURE CONTROLLER BMT-3A X10298 INTRODUCTION This microprocessor based dual range temperature control module incorporates the unique MONO-LINK Gate to Gate firing feature which uses single path hard firing for each phase thyristor pair eliminating cathode


    OCR Scan     		PDF X10298 BS7671) 10K3A1 IS09002 Betatherm 10K3A1