GATE MOTOR Search Results

Contextual Info: Micropac Industries, Inc – Microcircuits Division AN-9002 IPC Application Note: ote: Low Maintenance AC Powered Security ecurity Gate Mechanical Gate components: A typical Security Gate system consists of the gate, a rail or guide system, one or two motors,

TO-226-AE

Abstract: BC108 characteristic JFET BF245 BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C

Contextual Info: MOTOROLA QUAD 2-INPUT OR GATE QUAD 2-INPUT OR GATE The MC10103 is a quad 2-input OR gate. The MC10103 provides one gate w ith OR/NOR outputs. Pq = 25 mW typ/gate No Load tpd = 2.0 ns typ L SUFFIX CERAMIC PACKAGE CASE 620 t r, tf = 2.0 ns typ (20%-80%) 16

2N5486 MOTOROLA

Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
Contextual Info: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current

mc10101

Contextual Info: MOTOROLA QUAD OR/NOR GATE QUAD OR/NOR GATE The MC10101 is a quad 2-input OR/NOR gate with one input from each gate common to pin 12. Pq = 25 m W typ/gate {No Load tpd = 2.0 ns typ t r, tf = 2.0 ns typ 20% -80% ) L SUFFIX CERAMIC PACKAGE CASE 620 1 P SUFFIX

2N5484

Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current

MGP2N60D

Contextual Info: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching

MGP2N60D

Contextual Info: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc

MC10102

Abstract: 0890
Contextual Info: MOTOROLA MCI0102 QUAD 2-INPUT NOR GATE QUAD 2-INPUT NOR GATE The MC10102 is a quad 2-input NOR gate. The MC10102 pro­ vides one gate with OR/NOR outputs. Pq = 25 m W typ/gate No Load tpd = 2.0 ns typ L SUFFIX CE RA M IC PACKAGE CASE 620 tr, tf = 2.0 ns typ (20°/^80% )

DL122

Abstract: MC10103
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR Gate MC10103 The MC10103 is a quad 2–input OR gate. The MC10103 provides one gate with OR/NOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE

MC10102

Abstract: MC10102 motorola MC10102-D equivalent DL122 motorola 16 pin
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input NOR Gate MC10102 The MC10102 is a quad 2–input NOR gate. The MC10102 provides one gate with OR/NOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE

MC14501UB

Abstract: MC14XXXBCL MC14XXXBCP MC14XXXBD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14501UB Triple Gate Dual 4–Input “NAND” Gate 2–Input “NOR/OR” Gate 8–Input “AND/NAND” Gate L SUFFIX CERAMIC CASE 620 The MC14501UB is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These

MC10101

Abstract: DL122 MC10101-D
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad OR/NOR Gate MC10101 The MC10101 is a quad 2–input OR/NOR gate with one input from each gate common to pin 12. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%–80%) L SUFFIX CERAMIC PACKAGE

10503

Abstract: 10503/BEAJC
Contextual Info: M MOTOROLA Military 10503 Quad 2-Input OR Gate ELECTRICALLY TESTED PER: MPG 10503 The 10503 is a quad 2 input OR gate. The 10503 provides one gate with OR/NOR outputs. • 40 mW Max/Gate (No Load) • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80%)

mc10103

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR Gate The MC10103 is a quad 2-input OR gate. The MC10103 provides one gate with OR/NOR outputs. Pq = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%-80%) L SUFFIX CERAMIC PACKAGE CASE 620-10

motorola transistor ignition

Abstract: MGP15N40CL
Contextual Info: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

MGP15N38CL

Contextual Info: MOTOROLA Order this document by MGP15N38CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N38CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

221A49

Abstract: MGP7N60E OP77
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination

ESD 141

Abstract: MGP20N63CL
Contextual Info: MOTOROLA Order this document by MGP20N63CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N63CL Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate–Emitter ESD protection, Gate Collector Over–

3 phase IGBT inverter design by microcontroller

Abstract: STGIPS20K60 IGBT inverter design by microcontroller 3 phase IGBT inverter stgips10k60a 3 phase IGBT rectifier design by microcontroller SDIP-25L application note for STGIPL14K60 STGIPL14K60 3 phase bridge fully controlled rectifier
Contextual Info: IGBT intelligent power modules Bridge rectifier Microcontroller Gate driver Half bridge Gate driver Half bridge Gate driver Half bridge NTC temperature monitoring M Intelligent power module Feedback STMicroelectronics Compact and high-performance AC motor drive

A 720 transistor

Abstract: MGW12N120D
Contextual Info: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a

tme 126

Abstract: MGW12N120 IC9012 Bipolar WPC
Contextual Info: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.

MGY25N120D

Contextual Info: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a