GAY CC Search Results

SKM 100 GAX 173 D

Abstract: skm 100 semikron blocking diode 1200 V 250 A M100 bi-directional switches IGBT skm100gay
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1700 1700 110 / 75 220 / 150 ± 20 625 / 310 –40 . +150 (125) 4000 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms

bi-directional switches IGBT

Abstract: skm 254 f gax-2 semikron case d 56 hardware Semikron SKM SEMIKRON 1200 V 95 A
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1700 1700 220 / 150 440 / 300 ± 20 1250 –40 . +150 (125) 4000 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms

SKM 300 CIRCUIT

Abstract: SKM 300 GB 123 D SKM 350 GAX
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 300 / 220 600 / 440 ± 20 1660 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms

skm 152 ga 123

Abstract: transistor 1502c semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 200 GB 102 D Diode semikron 103
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 145 / 110 290 / 220 ± 20 830 –40 . +150 (125) 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

Contextual Info: seMIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 1700 1700 220/150 440 / 300 ±20 1250 -40 . +150 125) 4000 = 20 Toase = 25/80 °C Toase = 25/80 °C; tp = 1 ms R ge lc IcM V ges Ptot Tj, (Tstg) V¡sol humidity climate

semikron skm 40

Abstract: skm 25 gb 100 d IL0If SKM 300 GA 102 D SKM 100 GAX 173 D
Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms P to t per IGBT, Toase = 25 °C Tj, Tstg) V¡sol humidity climate Units 1200 1200 300 / 220 600 / 440 ± 20

Contextual Info: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg) V¡sol humidity climate Units 1200 1200 145 /110 290 / 220 ±20 830 ^ 0 . +150 (125) 2500 Rge = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms

23648

Contextual Info: RÊ25C I 15 0 0 □ HM0: + / - 1 7 . ROC ! .7 '/ . / 0 O P E R A T I N G R A N G E ¡- 55 T G 1 2 5 G C T G F A G G R A N G E :- 65 T G 1 5 0 G T H E R M A L T I M E P O N 0:T A N T :t,0 0:EC. M A X H I C CI F A T I G N G G N G T A N T :2 ,5 n W / G M I N

Contextual Info: User’s Guide NHD-320240WG-BxFGH-VZ# LCM Liquid Crystal Display Graphic Module RoHS Compliant NHD320240WGB xFGHVZ#- Newhaven Display 320 x 240 pixels Display Type: Graphic Model serial number: B, x: New IC rev. White CCFL B/L STN Gray Transflective, 6:00 View , Wide Temperature (-20 ~ +70c)

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - Line Transient Voltage Protection in Portable Electronics ESD Protection Diodes SMFxxA Series ESD Protection Diodes Provide High Surge Capability of 200 W in Low-Profile SMF Package KEY BENEFITS

GAY17

Abstract: C8050 10C1 c21027 M1s0 NPT-IGBT SKM GAY1
Contextual Info: back I ¡Hi 5EMIKR0N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units Ptot Tj, T s,g) per IGBT/Diode, T caSe = 25 °C Vsol AC, 1 min. DIN 40 040 DIN IEC 68 T.1 humidity climate 1700 1700 1 1 0 /7 5 2 2 0 /1 5 0 ±20

capacitor poliester 100nf

Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Contextual Info: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

Contextual Info: FIN AL AMDÌ1 Am79512/4 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-current feed ■ Programmable loop-detect threshold Line feed characteristics independent of battery variations ■ On-chip switching regulator for low-power

Contextual Info: HI5810 HARRIS S E M I C O N D U C T O R CMOS 10 Microsecond, 12-Bit, Sampling A/D Converter with Internal Track and Hold August 1997 Features Description • Conversion T im e .lO^is The HI5810 is a fast, low power, 12-bit, successiveapproximation, analog-to-digital converter. It can operate from

gc 301

Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
Contextual Info: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )

nokia c1 circuit diagram

Abstract: nokia c5 TEA5750 diodes V1F AMP 575050 Nokia c7 C101 C104 Q102 R101
Contextual Info: APPLICATION NOTE ASO PLUS / TEA5750 By Jean-Yves COUET SUMMARY Page I. INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II. GENERAL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D1454

Abstract: pin diagram of ic 4520 D2593 LC7869E LC78815 sanyo Laser pickup LC7868E LC78816 LC7868 AO1448
Contextual Info: Ordering number : EN4520 CMOS LSI LC7868E, 7869E No. 4520 SANYO Digital Signal Processor for Compact Disc Players i Overview • T h e L C 7868/69 sets the C 2 flags by referencing the C l T he LC 7868E and the L C 7869E are CM O S L SIs for signal processing and servo control in com pact disk players, laser

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

025161LG5D-60

Abstract: CD 4751 025161LG5D-6H 025170LG5D-60
Contextual Info: IBM025160 IBM025161 IBM025170 IBM025171 256K X 16 M ULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance: • FLASH WRITE with W PBM -512 x 16 bits Param eter j -6H ; -60 j -70 • Persistent & Non-Persistent WPBM mode

Contextual Info: DSP Microcomputer ADSP-21065L ANALOG DEVICES Preliminary Technical Information • H igh -P erform an ce S ign al C om puter for C om m u n ication s, A u dio, A u tom otive, In stru m en tation , and Indu strial A p p lication s • Super Harvard A rchitecture C om puter SH A R C Four Indeptëfolént B u ses for D u al D ata,

motorola HEP cross reference

Abstract: ECHO canceller IC volterra Non-Pipelined processor LMS adaptive filter model for FPGA audio echo ic motorola hep NLMS Algorithm P-862 subband adaptive filter
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2598/D Rev. 0, 5/2004 Freescale Semiconductor, Inc. Network Echo Cancellers and Motorola Solutions Using the StarCore SC140 Core by Roman A. Dyba, Perry P. He, and Lúcio F. C. Pessoa CONTENTS 1 Echo Occurrence in

Non-Pipelined processor

Abstract: LMS adaptive filter model for FPGA Low-Pass Fliege Filter volterra Digital ECHO microphone mixing circuit Fast Block LMS Adaptive Filter using distributed Fliege P-862 LMS adaptive Filters BELL MOUTH
Contextual Info: Freescale Semiconductor Application Note AN2598 Rev. 1, 11/2004 Network Echo Cancellers and Freescale Solutions Using the StarCore SC140 Core by Roman A. Dyba, Perry P. He, and Lúcio F. C. Pessoa This application note surveys selected echo cancellation