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    Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		I27307 GB20RF60K E78996 12-Mar-07 PDF

    law 4933

    Abstract: E78996 rectifier module transistor P2D 9-04
    Contextual Info: GB20RF60K Vishay High Power Products IGBT PIM Module, 21 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft


    Original     		GB20RF60K 18-Jul-08 law 4933 E78996 rectifier module transistor P2D 9-04 PDF

    Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


    Original     		I27307 GB20RF60K PDF