GC MARKING DIODE Search Results

Contextual Info: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

A778

Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Contextual Info: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

SOT89 marking GA

Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Contextual Info: BAW78A.BAW78D Silicon Switching Diodes 1
Switching applications 2
High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89

MARKING GA

Abstract: Q62702-A779 Q62702-A778
Contextual Info: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

ga sot-89

Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Contextual Info: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C

nfi7

Abstract: marking A95 SC201 SC201-4 SC201-8
Contextual Info: S C 2 0 1 o.5A : Outline Drawings FAST RECOVERY DIODE : Features • fm n to v iu k Surface mount device ISfcjv : Marking Cathode Marti High voltage by mesa design, Cod« • ftftfltli High reliability Tv» S C 20I-2 SC201-4 S C 201-8. Cod* a a QB GC : Applications

MARKING GA

Abstract: A779 baw78c
Contextual Info: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8

Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15

MA707

Abstract: marking GC diode GC marking diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA707 Silicon epitaxial planer type For UHF mixer Unit : mm INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● Mini package, enabling down-sizing of the equipment and automatic

Contextual Info: Panasonic Schottk y Barrier Diodes SBD MA2S707 Silicon epitaxial planer type U n it : m m For UHF mixer I Features ( 0 -2 ) Small forward voltage Vp Large conversion gain GC and optimum for UHF mixer SS-Mini package, enabling down-sizing of the equipment and auto­

schottky diode marking A7

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-

103 capacitor

Abstract: marking GC diode ma2x707 935 schottky diode gc capacitor diode marking Gc GC PIN DIODE
Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and

MA733

Abstract: diode marking Gc marking GC diode 103 capacitor
Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE 2 Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud

MA733

Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer M Di ain sc te on na tin nc ue e/ d 1 2 +0.1 1.7±0.1 0.4±0.15

M2X diode

Abstract: marking N11 diode MA707
Contextual Info: MA111 Schottky Barrier Diodes SBD MA730 Silicon epitaxial planer type Unit : mm +0.2 For UHF mixer 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 Optimum for the UHF band mixer 1.45 ● +0.1 Small forward voltage VF 3 0.4 –0.05 ● 0.95 Large conversion gain (GC)

103 capacitor

Abstract: MA2X707 marking GC diode
Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 2 M Di ain sc te on na tin nc ue e/ d 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain

Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and

1N21B diode

Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Contextual Info: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.

M2X diode

Abstract: MA3X730
Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 0.95 + 0.2 Unit Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature

Contextual Info: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 + 0.05 Forward voltage Junction temperature Storage temperature + 0.05 Rating 0.15 ± 0.05 2 Unit ea s ht e v tp is :// it pa fo na llo so win ni g c. U

Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1

MA2S707

Contextual Info: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 Symbol + 0.05 2 0.15 ± 0.05 1 0.6 ± 0.05 0.80 − 0.03 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: SC201 0.5A <§ FAST RECOVERY DIODE • O utline Drawing 121“ H Features Marking • Surface mount device • High voltage by mesa design • High reliability - CATHODE MARKING ■SYMBOL A-SYI I GA 14 j- H Applications • High speed switching

GHM1540

Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
Contextual Info: This is the PDF file of catalog No.C16E-3. No.C16E3.pdf MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR DC250V-3.15kV/AC250V r.m.s. GHM Series MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C16E-3 This is the PDF file of catalog No.C16E-3.